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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Mobility-lifetime products in hydrogenated amorphous silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 508-510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The most important parameters characterizing the photoelectronic quality of a semiconductor are its charge-carrier mobility lifetime, μτ, products. The two common experimental methods used to determine these parameters in hydrogenated amorphous silicon, a-Si:H, are the steady-state photoconductivity measurement and the life-of-flight charge-collection measurement. The two methods yield quite different results. We show that the difference can be resolved by an understanding of the physics involved in each of the measurements. We show that the steady-state μτ is expected to be up to three orders of magnitude larger than the time-of-flight μτ in undoped a-Si:H. This prediction is in excellent agreement with the corresponding experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104622
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  • 2
    Electronic Resource
    Electronic Resource
    Critical comparison of light-induced changes in sub-band-gap absorption and photoconductivity in hydrogenated amorphous silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1247-1249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work compares changes in the density of states due to light-induced degradation estimated by photoconductivity with those measured by photothermal deflection spectroscopy (PDS) on a series of hydrogenated amorphous silicon (a-Si:H) films having different valence bandtail widths (E0 ). We find that the photoconductivity measurements indicate orders of magnitude larger defect density changes than do the PDS measurements as the valence bandtail becomes broader. This conflict is resolved by showing that this difference is due to changes in the recombination rate coefficient K with valence bandtail width. The absolute change in K increases exponentially with E0. However, the change in K relative to the K of the annealed state decreases with E0, explaining why poor material shows a smaller light-induced effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100729
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  • 3
    Electronic Resource
    Electronic Resource
    Ionization entropy and charge-state-controlled metastable defects in semiconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2634-2636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new theory of entropy-driven, charge-state-controlled metastability in semiconductors. The entropy change due to metastable defect ionization near 300 K reduces the Gibbs free energy by up to 0.1 eV. This affects equilibrium populations of the various defect charge states and configurations. An example is found in the experiment of Hamilton, Peaker, and Pantelides [Phys. Rev. Lett. 61, 1679 (1988)] in which a deep level transient spectroscopy signal suddenly disappears during cooling when the ionization entropy term causes a defect's stable local energy minimum to become metastable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101959
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  • 4
    Electronic Resource
    Electronic Resource
    Evidence for recombination-controlled electroluminescence in alkaline-earth sulfides (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3074-3076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film alkaline-earth-sulfide electroluminescent devices exhibit, under voltage-step excitation, an unexpected decrease in the light output if the voltage is abruptly increased at some time after the beginning of the step. We use this phenomenon to demonstrate that the dynamics of the light emission is controlled by field-dependent trapping and eventual recombination at empty activators rather than impact excitation of activators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339353
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  • 5
    Electronic Resource
    Electronic Resource
    Explanation of the limiting thickness observed in low-temperature silicon epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3589-3591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solution of the partial differential equation for diffusion of mobile atoms during solid film growth demonstrates that the observed phase transition in low-temperature silicon epitaxy is triggered by supersaturation of the growing layer with hydrogen. The limiting thickness of the epitaxial layer, hepi, is completely determined by measurable quantities: the flux of hydrogen, the hydrogen diffusion coefficient, and the layer growth rate. Our model accounts for the observed Arrhenius and growth rate dependence of hepi. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328767
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