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Electronic energy levels of Er3+ in ZnInGaS4:Er3+ single crystal and its site symmetry (2000)

Choe, Sung-Hyu

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 6089-6091

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: ZnInGaS4 and ZnInGaS4:Er3+ single crystals were grown using the CTR technique. The single crystals grown have a layered crystal structure. These compounds have both a direct and an indirect energy gap. Eight distinctive emission peaks of the ZnInGaS4:Er3+ single crystal were observed at 10 K. These photoluminescence peaks were attributed to the radioactive decay among the 4f split electron energy levels of the Er3+ ions that occupy the C2v site symmetry of the ZnInGaS4 single crystal host lattice. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1285839

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