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  • American Institute of Physics (AIP)  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Tunnel switch diode based on AlSb/GaSb heterojunctions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6948-6950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317236
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  • 2
    Electronic Resource
    Electronic Resource
    Strain in wet thermally oxidized square and circular mesas (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4594-4599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, we report the observation, through optical microscopy, of drumhead-like patterns in square and circular mesas which have been wet thermally oxidized to completion. Micro-Raman spectroscopy measurements are used to show that these patterns roughly correspond to variations in strain induced in surrounding semiconductor layers by the oxidation process. In addition, the patterns have a specific orientation with respect to the crystallographic axes of the semiconductor. A crystallographic dependence of the oxidation process itself is demonstrated and used to explain the orientation of the drumhead patterns. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373108
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of cylindrical geometry on the wet thermal oxidation of AlAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6901-6905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the wet thermal oxidation of AlAs in cylindrical geometry, a typical configuration for vertical-cavity surface-emitting lasers. Through both experiment and theoretical calculations, we demonstrate a significantly different time dependence for circular mesas from what has been reported in the literature both in studies of stripes and in a study of circular mesas. We attribute this different time dependence to the effect of geometry on the oxidation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368987
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  • 4
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    Electronic Resource
    Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4576-4579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice as the gain material in a separate absorption/multiplication avalanche photodiode with sensitivity up to 1.74 μm. Both gain schemes were implemented in a molecular-beam epitaxy grown structure with a selectively doped InAs/AlSb superlattice as the n-type layer. Hole impact ionization enhancement was observed in Al0.04Ga0.96Sb by using a two wavelength injection scheme. The superlattice gain layer device exhibited multiplication factors in excess of 300, and surface limited dark current at a level comparable to InGaAs/InAlAs devices of similar design. The superlattice gain layer was found to be more promising than its bulk counterpart due to its inherent lower dark current. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371405
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