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  • American Institute of Physics (AIP)  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Effect of Ca2PbO4 additions on the formation of the 110 K phase in Bi-Pb-Sr-Ca-Cu-O superconducting ceramics (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 637-639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of the Bi2Sr2Ca2Cu3Ox phase in the high Tc superconducting Bi-Pb-Sr-Ca-Cu-O system through reacting Bi2Sr2CaCu2Ox with Ca- or Cu-rich intermediate phases, Ca2CuO3, CuO, and Ca2PbO4, has been studied. X-ray diffraction and electrical and diamagnetic analyses revealed that the interaction and interdiffusion of these intermediate phase led to the formation of a high percentage of the 2223 phase and a sharp single-step superconducting transition at Tc(R = 0) = 108 K. Also, Ca2PbO4 proved essential for accelerating the growth rate of the 110 K phase from the 85 K phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104553
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  • 2
    Electronic Resource
    Electronic Resource
    Double resonant behavior of microstrip ring resonator in Tl-based high Tc superconducting films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3281-3283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc Tl–Ba–Ca–Cu–O superconducting thin films have been made by the dc magnetron sputtering followed by postannealing. In this study, a Tl-based microstrip ring resonator was fabricated by using standard microelectronic photolithographic patterning and wet chemical etching. Experimental results indicated that these ring resonators exhibit the best unloaded Q of 3269 at its resonant frequency of 3.35 GHz and some other samples display the double resonant behavior at 77 K. The frequency difference of the double resonant peaks depends on the input microwave power, and the splitting is ascribed to spatial variations in the film microstructure. The physical properties of the films are about 1 μm thick, as high as 105 K transition temperature, and greater than 105 A/cm2 current density at zero magnetic field and 77 K. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112437
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