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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4446-4448 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3024-3029 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new remote sensor for measuring on-road carbon monoxide, carbon dioxide, and hydrocarbon exhaust emissions in under 1 s from vehicles passing the sensor is described. The new design adds the capability for measuring exhaust hydrocarbons and eliminates the need for liquid–nitrogen-cooled detectors while improving upon the overall signal to noise. Under typical field operating conditions, sensitivity to 0.05% propane with a precision of 0.014% propane is observed. Two types of water interferences important to the measurement of exhaust hydrocarbons are reported. The water vapor present in all auto exhaust causes a small positive bias dependent on the analytical wavelength chosen. A much larger interference is caused by liquid water (often called "steam'') plumes seen behind cold vehicles at low temperatures. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 10715-10724 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The pure rotational spectra of ZrO and ZrS have been recorded using cavity Fourier transform microwave spectroscopy in the frequency range 9–26 GHz. The molecules were generated by laser ablation of a solid Zr rod in the presence of 0.05% of O2 or H2S, respectively, in either argon or neon. Rotational spectra of five previously unobserved isotopomers of ZrO in the X 1Σ+ state have been measured. Spectra for all five Zr32S isotopomers and for the 90Zr34S isotopomer in natural abundance have also been measured; this is the first report of pure rotational transitions for ZrS. Transitions in several excited vibrational states were also measured for the most abundant isotopomers of both species. Atomic mass-dependent Born–Oppenheimer breakdown correction terms were determined by fitting the data obtained for each molecule to a Dunham-like expression. Values for the equilibrium bond lengths of the two species were also calculated from the results of these fits. For both the 91Zr32S and 91Zr16O isotopomers, nuclear hyperfine structure due to the zirconium nucleus was observed and values for eQq0(91Zr) and CI(91Zr) have been determined. A rotational transition in the low lying a 3Δ state of ZrS has also been observed. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 2073-2077 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Zeeman effect on the F-1/2←3/2 hyperfine component of the R(0) line in the (0,0) band of the A1Π–X1Σ+ transition of iridium mononitride, IrN, was investigated using a supersonic molecular beam optical spectrometer. The magnetic gJ-factor for IrN in the A1Π state was determined to be 0.96±0.05. The general applicability of Zeeman measurements is described and the gJ-factor which is determined is related to plausible molecular orbital descriptions for IrN in the A1Π state. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 10876-10882 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Optical/Stark measurements have been performed on the (0,0) bands of both the A″ 1Σ+–X 1Σ+ system (ν0(approximate)12 643 cm−1) and the A′ 1Π–X Σ+ system (ν0(approximate)13 196 cm−1) of platinum monocarbide. The PtC molecules were produced in a pulsed supersonic molecular beam source following the reaction of laser ablated platinum vapor with a mixture of a few percent of methane in argon. The newly determined permanent electric dipole moments obtained are 1.94(2)D (A″ 1Σ+) and 1.919(9)D (A′ 1Π). These results are discussed in terms of a proposed molecular orbital correlation diagram for platinum containing diatomics. The laser-induced fluorescence spectrum of the (0,0)A″ 1Σ+–X 1Σ+ transition of PtC has been re-recorded at high resolution (full width of half-maximum ∼40 MHz) and analyzed to yield rotational constants for the four most abundant isotopomers of PtC, extending the previous analysis [Appelblad, Nilsson, and Scullman, Phys. Scr. 7, 65 (1973)]. The anomalously large value (∼15 MHz) for the newly derived nuclear-spin rotation parameter, CI(195Pt), for the A″ 1Σ+ state is discussed. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 9084-9094 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A supersonic molecular beam of scandium imide, ScNH, and deuterated imide, ScND, were produced using a laser ablation/reaction source and interrogated by laser induced fluorescence and dispersed fluorescence spectroscopy. The field free fine and magnetic hyperfine interactions and Stark effect in the (0,0) A˜ 2Πr–X˜2Σ+ transition of ScNH (origin=15 023.033 cm−1) were analyzed. Ground state vibrational spacing for ScNH and ScND was measured. The determined permanent electric dipole moments are μ(A˜ 2Π)=4.08(7)D and μ(X˜ 2Σ+)=2.28(15)D. Plausible molecular orbital descriptions are given for the A˜ 2Πr and X˜ 2Σ+ states based upon the interpretation of the spectroscopic parameters and a comparison with other isovalent molecules is made. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Publication Date: 2015-05-09
    Description: The influence of light stimulation and photogenerated carriers on the process of dopant surface segregation during growth is studied in molecular beam epitaxially grown Si-doped GaAs structures. The magnitude of surface segregation decreases under illumination by above-bandgap photons, wherein splitting of the quasi Fermi levels reduces the band bending at the growth surface and raises the formation energy of compensating defects that can enhance atomic diffusion. We further show that light-stimulated epitaxy can be used as a practical approach to diminish dopant carry-forward in device structures and improve the performance of inverted modulation-doped quantum wells.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 8
    Publication Date: 2015-12-17
    Description: The ternary alloy GaAs 1–x Bi x is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs 1–x Bi x epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., In y Ga 1– y As. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. The improved optical quality now opens up possibilities for the practical use of GaAs 1–x Bi x in optoelectronic devices.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 9
    Publication Date: 2015-01-06
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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