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  • 1
    Electronic Resource
    Electronic Resource
    Secondary ion yield changes on rippled interfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 906-908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter erosion often leads to the development of surface ripples. Here we investigate the effect of the ripples on the secondary ion yield, by calculating the yield as a function of the microscopic parameters characterizing the ion cascade (such as penetration depth, widths of the deposited energy distribution) and the ripples (ripple amplitude, wavelength). We find that ripples can strongly enhance the yield, with the magnitude of the effect depending on the interplay between the ion and ripple characteristics. Furthermore, we compare our predictions with existing experimental results.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120932
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  • 2
    Electronic Resource
    Electronic Resource
    Equilibrium phase diagrams for dislocation free self-assembled quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2102-2104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equilibrium theory of self-assembled quantum dot (SAQD) formation can account for many of the experimentally observed growth modes. Here, we show that despite the large number of material constants entering the free energy of strained islands, there are only four topologically different phase diagrams describing the SAQD formation process. We derive each of these phase diagrams and discuss the physical properties of the predicted growth modes.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121289
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  • 3
    Electronic Resource
    Electronic Resource
    Self-assembled island formation in heteroepitaxial growth (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2565-2567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion, and stress relaxation. For high misfit the system naturally evolves into a state characterized by a narrow island size distribution. The simulations indicate the existence of a strain assisted kinetic mechanism responsible for the self-assembling process, involving enhanced detachment of atoms from the edge of large islands and biased adatom diffusion. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118920
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  • 4
    Electronic Resource
    Electronic Resource
    Spatial ordering of islands grown on patterned surfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2651-2653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that growth on a sample patterned with an ordered defect array can lead to islands with rather narrow size distribution. However, improvement in the size distribution is achieved only if the growth conditions (flux and temperature) have optimal values, determined by the patterning length scale. Since the scanning tunelling and the atomic force microscopes are capable of inducing surface perturbations that act as potential preferential nucleation sites, our work demonstrates that nanoscale surface patterning can improve the ordering of platelets and self-assembled quantum dots. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122542
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-induced effective surface diffusion in ion sputtering (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2800-2802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion bombardment is known to enhance surface diffusion and affect the surface morphology. Here we demonstrate that preferential erosion during ion sputtering can lead to a physical phenomenon reminiscent of surface diffusion, what we call effective surface diffusion (ESD), that does not imply mass transport along the surface and is independent of the temperature. We calculate the ion-induced ESD constant and its dependence on the ion energy, flux and angle of incidence, showing that sputtering can both enhance and suppress surface diffusion. The influence of ion-induced ESD on ripple formation and roughening of ion-sputtered surfaces is discussed and summarized in a morphological phase diagram. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120140
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  • 6
    Electronic Resource
    Electronic Resource
    Self-organized superlattice formation in II–IV and III–V semiconductors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 764-766 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II–VI and III–V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118253
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of surface roughness on the secondary ion yield in ion sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2209-2211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122425
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of surface roughness on the secondary ion yield in ion sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122170
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