Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2906-2907
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was applied to Fe compensated InP. Power density spectra showed one main peak and several less well defined. An Arrhenius plot of log(T2/2f) versus 1/T gave an activation energy of 0.47 eV for the main peak, close to the value found by optical transient current spectroscopy (OTCS). The method is complementary to OTCS in that the same equipment is used and information is obtained more easily on levels which exhibit field-enhanced trapping.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106815
Permalink
|
Location |
Call Number |
Expected |
Availability |
