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  • 1
    Electronic Resource
    Electronic Resource
    Multisubband hot-electron transport in GaN-based quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2485-2487 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple rigorous analytical theory of two-dimensional (2D) nonequilibrium electrons occupying an arbitrary number of subbands in a quantum well is developed. The electric-field dependence of electron mobility and the average kinetic energy for AlN/GaN quantum wells are presented. At temperatures below 200 K the electron mobility is controlled mainly by the acoustic phonon scattering and it is a nonmonotonous function of the electric field, which has a maximum. At room and higher temperatures the interaction with both acoustic and polar optical phonons determine the hot-electron mobility and it depends very weakly on the electric field. Both the mobility and average energy of 2D electrons are smaller than that for three-dimensional (3D) electrons in the bulk semiconductor. Our theory provides a self-consistent transition from the 2D to the 3D regime of electron transport with increasing electric field accompanied by the occupation of an increasingly large number of subbands by the electrons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122490
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  • 2
    Electronic Resource
    Electronic Resource
    The Bloch–Grüneisen mobility of two-dimensional electron gas in AlGaN/GaN heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1565-1567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present calculations of the Bloch–Grüneisen electron mobility in zincblende (ZB) and wurtzite (WZ) AlGaN/GaN quantum-well heterostructures. Within the Boltzmann equation approach, we derive an expression for the momentum relaxation time which explicitly takes into account the Pauli principle restrictions, and show that these are comparable in importance to a screening effect at temperatures up to 150 K provided that the electron density is high. This is of particular importance for GaN-based quantum wells for which very high electron densities initiated by the strain-induced and spontaneous polarization fields have been recently reported. Dependences of the mobility on the lattice temperature and the electron density for both ZB and WZ GaN are presented, and it is shown that the WZ mobility is higher than the ZB mobility. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124756
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