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  • American Institute of Physics (AIP)  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Very low drive voltage optical waveguide modulation in an InGaAs/InAlAs superlattice (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first room-temperature observation of Wannier–Stark localization under waveguide configuration in a short-period InGaAs-InAlAs superlattice. Using the "oblique'' transition connecting a hole localized in a well with an electron localized in the adjacent well we have achieved a modulator having a 20 dB extinction ratio and a 3 dB attenuation with a drive voltage as low as 0.8 V. Our device is a 560-μm-long waveguide operating at 1.55 μm under TE polarization mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103680
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Blue shift of the absorption edge in AlGaInAs-GaInAs superlattices: Proposal for an original electro-optical modulator (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2632-2634 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modulation by an external electric field of the resonant tunneling coupling between adjacent wells in a thin layer superlattice results in a blue shift of the effective absorption edge. We present a study of the electroabsorption in Al0.24Ga0.24In0.52As-Ga0.47 In0.53 As superlattices, which evidence directly this remarkable effect, and we discuss its application to the design of new electro-optical modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100540
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  • 3
    Electronic Resource
    Electronic Resource
    Solid phase recrystallization of implanted III-V semiconductors under uniaxial stress (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2227-2229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of mechanical stress on solid phase epitaxial recrystallization of implanted amorphous III-V semiconductor layers is studied for the first time. A dual approach is used, involving either direct application of uniaxial stress on whole GaAs samples or the use of strained InGaAs layers deposited on InP substrates with indium composition as a stress control parameter. Observations show that with high applied stresses up to a few kilobars recrystallization kinetics remain unaltered. While homogeneous coherent strain does not bear any influence on interface roughness during regrowth, inhomogeneous strains due to defects greatly enhance the growth front roughness. This last result is interpreted in terms of defects acting as generating sources of additional defects during recrystallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99540
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  • 4
    Electronic Resource
    Electronic Resource
    Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3530-3532 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization insensitivity is presently an important challenge for electro-optical components for optical-fiber telecommunications. We report on a polarization insensitive electroabsorption modulator based on strained InGaAsP/InGaAsP multiple quantum wells and having remarkably high static performances, as illustrated by a record figure of merit of 4.3 (dB/100 μm)/(V/μm). We also discuss in detail the theoretical aspects of electroabsorption polarization independence for quantum well modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111263
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  • 5
    Electronic Resource
    Electronic Resource
    Compatible laser emission and optical waveguide modulation at 1.5 μm using Wannier–Stark localization (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1936-1938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electroabsorption properties of an InGaAs-InAlAs superlattice optical waveguide. When reverse biased, the structure exhibits large extinction ratios over short waveguide lengths with very low drive voltages by using low-energy oblique transitions below the superlattice band gap. Although the structure has been optimized for modulation, laser emission is observed under forward bias. The peak emission wavelength stands in the "blue-shift'' region which opens a way to straightforward laser-modulator monolithic integration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107156
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  • 6
    Electronic Resource
    Electronic Resource
    Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1750-1752 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach is proposed to realize the integration of a 4〉1 passive coupler with butt-jointed buried ridge structure distributive Bragg reflector lasers and transparent buried waveguides for Bragg section. The butt coupling facilitates an independent optimization of gain and Bragg sections and the proposed additional processing step, namely, localized hydrogenation of coupler regions, permits reducing dramatically the losses due to free holes in the p+-InP cladding layer. With a coupling efficiency of ∼90% and losses as low as ∼0.4 dB/mm, the integrated emitter with uncoated facets yielded output powers up to 0.4 mW for each wavelength at 100 mA. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119387
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence properties of high-quality GaAs layers grown by molecular-beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 503-508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) measurements have been performed on several molecular-beam epitaxial high-quality GaAs layers showing varied electrical characteristics (nominally undoped and intentionally doped n or p type). This work is carried out with a view to investigate the influence of the centers responsible for the defect–bound-exciton emissions (d,x) on the electrical properties of the layers. After a systematic study of the luminescence properties of the d,x emissions as a function of the electrical nature (doped n or p type), residual p doping level, PL excitation intensity, and sample temperature, we came to the following conclusion: In addition to the prominent residual carbon acceptors, at least a part of p conduction in nominally undoped p-type layers could come from the centers responsible for the d,x emission at 1.5109±0.0003 eV. This suggestion is tentatively ascertained by detecting an acceptor emission at ∼1.496±0.001 eV, shallower than the carbon acceptor about 3 meV. All these results in addition to those related to the detection of deeper acceptors in the spectral range 1.46–1.49 eV are presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334782
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  • 8
    Electronic Resource
    Electronic Resource
    Interfacial traps in Ga0.47In0.53As/InP heterostructures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1384-1388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reports on a study of n-type GaInAs layers grown by molecular-beam epitaxy on semi-insulating Fe-doped InP substrates. Hall measurements are performed on bevelled layers to obtain carrier concentration and mobility profiles. An infrared transient spectroscopy technique (backgating effect induced by infrared illumination in the 0.8–2 μm wavelength range) is used to detect the deep level responsible for the reduction of both carrier concentration and mobility near the heterointerface. An electronlike trap with an activation energy of ≈0.32 eV is found. Optical ionization and neutralization energies are also obtained. The results are compared with those obtained by others from electron paramagnetic resonance, photoconductivity, and deep level transient spectroscopy measurements. It is concluded that the electronlike trap, tentatively ascribed to an Fe acceptor level, is located at the heterointerface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345693
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