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  • 1
    Electronic Resource
    Electronic Resource
    Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5601-5603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of step bunching on vicinal GaAs(001) annealed at different temperatures in AsH3 and H2 ambient was studied by scanning tunneling microscopy. The results provided aspects of the evolution of step bunching from the initial to the final stage. We observed a appearance of additional step bunchings which have a peculiar azimuth of 〈210〉, 〈21¯0〉, 〈310〉, and 〈31¯0〉.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357165
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of step bunching on vicinal GaAs(100) studied by scanning tunneling microscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1625-1627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Similar step bunchings which consist of 7–9 single steps were observed by scanning tunneling microscopy on both vicinal GaAs(100) surfaces grown by metalorganic chemical-vapor deposition (MOCVD) and annealed in AsH3 atmosphere. Growth parameters, including deposition rate, layer thickness, V/III ratio, and growth temperature, did not affect the morphology of the step bunching. These results indicate that step bunching is induced during the annealing process and its surface morphology is preserved during MOCVD growth for a wide range of growth parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110716
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  • 3
    Electronic Resource
    Electronic Resource
    A novel approach to electrochromism in WO3 thin film using piezoelectric ceramics for power supply (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1639-1640 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrochromism was newly realized in a WO3–Pb(Zr0.52Ti0.48)O3 (PZT) system which utilized the piezoelectric property of PZT ceramics for power supply. The electric power produced by Mn-doped PZT ceramics enabled the WO3 film to color blue. High piezoelectricity with a peak voltage of 35 V and peak current of 1.2 mA on a 30 kΩ circuit was observed at a pressure of 30 MPa for the present system. This study shows the possibility to actuate the electrochromic WO3 film with PZT ceramics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118654
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  • 4
    Electronic Resource
    Electronic Resource
    Artificial skin to sense mechanical stress by visible light emission (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1236-1238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The idea and successful practice of a stress sensor to sense mechanical stress by an artificial skin, i.e., self-diagnosis thin film, has been realized, through the fabrication of a high-luminescence thin piezoelectric film which can reproducibly emit strong visible light upon stressing. The strongest luminescent film consists of nanosized crystallites of ZnS doped with 1.5 at. % Mn, in which Mn acts as the emitting center. The intensity of the emitted luminescence responds to stress applied directly onto the film or to the underlying material reversibly and reproducibly, so it can be used as an artificial skin to sense mechanical stress. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123510
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  • 5
    Electronic Resource
    Electronic Resource
    Broad photoluminescence band in undoped AlxGa1−xAs grown by organometallic vapor phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7533-7539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the 77 K photoluminescence (PL) of undoped-AlxGa1−xAs (0.21≤x≤0.83) grown by organometallic vapor phase epitaxy. A deep broad (DB) PL band is found at 1.6–1.7 eV at a range of x from 0.21 to 0.63, with a maximum intensity at around x=0.5. Its large full width at half-maximum (∼200 meV) suggests that this emission originates from some impurity-defect complex. The Si- and C-doping dependencies of the PL reveal that the emission disappears in Si-doped n-type samples while it increases in intensity superlinearly with the hole concentration, thus, the emission center is C acceptor related. Furthermore, annealing Al0.52Ga0.48As samples in H2 flow eliminates the emission, while annealing in AsH3 flow increases the emission. Based on these results, we have considered the doping and V/III dependencies of various major point defects present in p-type GaAs and those of the combinations of the C acceptor and these defects. It is concluded that the DB band originates from the substitutional C–As antisite complex (CAs–AsGa). Mass-action rule analysis of the complex deduces a quadratic increase in the PL intensity with hole concentration, which generally explains the experimental results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365296
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  • 6
    Electronic Resource
    Electronic Resource
    Prandtl number of lattice Bhatnagar–Gross–Krook fluid (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 7 (1995), S. 2280-2282 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice Bhatnagar–Gross–Krook modeled fluid has an unchangeable unit Prandtl number. A simple method is introduced in this report to formulate a flexible Prandtl number for the modeled fluid. The effectiveness of this method was demonstrated by numerical simulation of the Couette flow. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868771
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  • 7
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    Bench testing of a heterodyne CO2 laser dispersion interferometer for high temporal resolution plasma density measurements (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-12-09
    Description: A heterodyne detection scheme is combined with a 10.59 μm CO 2 laser dispersion interferometer for the first time to allow large bandwidth measurements in the 10-100 MHz range. The approach employed utilizes a 40 MHz acousto-optic cell operating on the frequency doubled CO 2 beam which is obtained using a high 2nd harmonic conversion efficiency orientation patterned gallium arsenide crystal. The measured standard deviation of the line integrated electron density equivalent phase resolution obtained with digital phase demodulation technique, is 4 × 10 17 m −2 . Air flow was found to significantly affect the baseline of the phase signal, which an optical table cover was able to reduce considerably. The heterodyne dispersion interferometer (DI) approach is found to be robustly insensitive to motion, with measured phase shifts below baseline drifts even in the presence of several centimeters of retroreflector induced path length variations. Plasma induced dispersion was simulated with a wedged ZnSe plate and the measured DI phase shifts are consistent with expectations.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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