Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 932-933
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report p-type cubic GaN. The Mg-doped layers were grown on vicinal (100) GaAs substrates by plasma-enhanced molecular beam epitaxy. Thermally sublimed Mg was, with N2 carrier gas, fed into an electron-cyclotron resonance source. p-type zinc-blende-structure GaN films were achieved with hole mobilities as high as 39 cm2/V s at room temperature. The cubic nature of the films were confirmed by x-ray diffractometry. The depth profile of Mg was investigated by secondary ions mass spectroscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109848
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