Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2034-2036
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The crystal damage in optoelectronic devices caused by dry etching methods [ion beam etching, reactive ion etching, etching with plasmas excited by electron cyclotron resonance (ECR)] was evaluated. The analytics applied are photoluminescence and Fabry-Perot damping measurement which were applied to waveguides. A significant improvement is observed using ECR etching as low damage combined with high etching rates is concerned. To evaluate a method as soft or hard etching, Fabry-Perot damping measurement has emerged to be the most discriminate and decisive tool. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115069
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