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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 664-672 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated the chemical nature and the electronic structure of the interface between a low work function metal, aluminum, and a conjugated polymer semiconductor, polythiophene. We have studied the initial stages of the interface formation by depositing the metal onto the surface of a polymer film. Charge transfer processes between the metal and the polymer are analyzed using core-level x-ray photoelectron spectroscopy (XPS); the evolution upon metallization of the valence electronic levels directly related to the polymer electronic structure is followed with ultraviolet photoelectron spectroscopy (UPS). With these techniques, we investigate the deposition of aluminum on two polythiophene systems (i) the alkyl-substituted poly-3-octylthiophene and (ii) the α-sexithiophene oligomer. The experimental data are compared to the results of a recent quantum chemical study on model systems consisting of thiophene oligomers (up to sexithiophene) interacting with a few Al atoms. The interaction of polythiophene with Al atoms is found to modify dramatically the structure of the conjugated backbone, as strong carbon–aluminum bonds are formed in the α positions of the thiophene rings. A large charge transfer takes place from the Al atoms to the polymer chain, and the upper π levels of the polymer are strongly affected. The metallization is contrasted to the doping of conjugated polymers with alkali metals.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2797-2799 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study on low-temperature photoluminescence (PL) of Si-doped Ga1−xAlxAs (n ∼ 1×1017 cm−3, 0.2≤x≤ 0.5) grown by molecular beam epitaxy (MBE) either in the presence and in the absence of a hydrogen backpressure and/or post-growth hydrogenated by exposure to a hydrogen plasma; we show that GaAlAs grown with hydrogen has a PL efficiency higher than that of material grown without hydrogen by a factor of up to 20; even more interestingly, the relative enhancement of transitions related to excitons and to shallow donors and acceptors is so large that the two kinds of PL spectra are qualitatively different. On the contrary, independently on whether material grown without hydrogen is post-growth hydrogenated, the spectral features of PL spectra are dominated by transitions involving relatively deep donors and/or acceptors. Our results suggest that the two treatments with hydrogen act on deep levels of different origin.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 9704-9718 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Inelastic neutron scattering experiments are combined with infrared and Raman data to obtain a uniquely defined description of the intramolecular vibrations of three oligomers of polythiophene. Through refinement of ab initio force fields, the three vibrational spectra of each oligomer are simulated with remarkable accuracy. Two different basis sets of atomic orbitals are used: the first, is 6-31G* and is used to optimize the geometries and calculate the relevant force fields of α-2T and α-4T, the second is 3-21G* and is used for the same purpose for α-4T and α-6T. To improve agreement with the experiment, the force fields are scaled. In this way, one set of scaling parameters is generated for the 6-31G* basis and another for the 3-21G* basis. The parameters are common to both molecules calculated with either basis sets and are believed to be transferable to higher isomers. The fitting procedure is applied in steps: first, the calculated vibrational frequencies are assigned on the basis of the experimental infrared and Raman activity, then a fitting of the Inelastic Neutron Scattering profile is performed, finally, the infrared and Raman spectra are calculated with the new normal modes and the ab initio derivatives of the dipole moment and the polarizability. The procedure is iterated until the three spectra of each oligomer are satisfactorily reproduced. For α-4T, two scaled force fields are obtained—one for each basis set—and are shown to yield very similar normal modes. It is important to emphasize that not only the vibrational frequencies but also the spectral intensities are well reproduced by the simulations. Implicitly, this means that the dipole moment and the polarization tensor surfaces calculated ab initio at the potential energy surface minimum are of good quality. The procedure is absolutely general and can be applied to any molecular system. In the present case, it leads to well defined force fields that give us a stringent picture of the vibrations of these molecules. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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