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  • American Institute of Physics (AIP)  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Far-infrared electroluminescence from parabolic quantum well superlattices excited by resonant tunneling injection (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 172-177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an investigation of intersubband emission at far-infrared wavelengths from semiconductor superlattices with parabolically graded quantum wells. Light emission is produced by sequential resonant tunneling injection of electrons into higher energy levels of the quantum wells and subsequent radiative decay. The current versus voltage curves of these devices exhibit negative differential resistances characteristic of the sequential resonant tunneling injection. A single, narrow emission peak is observed from the superlattices with parabolic quantum wells demonstrating radiative decay through multiple evenly spaced energy levels. When a chirped superlattice acting as an electron energy filter replaces the barrier in each period of the structure, clearer resonances are observed in the current–voltage characteristics and more efficient injection is achieved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373638
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of 100-nm-thick GaAs cantilevers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3591-3593 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new process for making submicron, micromechanical cantilevers out of GaAs epilayers grown by molecular beam epitaxy. The extremely high aspect ratios of these cantilevers (typically 100 nm thick and 100 μm long) give spring constants as low as 10−4 N/m. We present characterizations of the cantilevers' resonant frequencies, quality factors, and spring constants. The ability to fabricate III–V GaAs-based mechanical microstructures offers new opportunities for integration with electronics for strain-sensitive force detection. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147250
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  • 3
    Electronic Resource
    Electronic Resource
    Far-infrared emission from parabolically graded quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3522-3524 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed grating coupled far infrared (FIR) emission from parabolically graded quantum wells (PQWs) by the application of an in-plane electric field. The peak emission frequency from different wells matches the designed harmonic oscillator frequency for each well, as determined by the curvature of the PQWs. This is a confirmation that the generalized Kohn theorem applies for emission of FIR radiation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117232
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  • 4
    Electronic Resource
    Electronic Resource
    Interface between low-temperature grown GaAs and undoped GaAs as a conduction barrier for back gates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3459-3461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a back gated 2DEG (two-dimensional electron gas) structure using low-temperature grown (LTG) GaAs as a barrier layer between the back gate and the undoped GaAs channel. The sheet concentration of the 2DEG can be linearly varied from full depletion up to 3×1011 cm−2 at 12 K. When this charge modulation is modeled by a simple parallel plate capacitor, we find that the distance between the plates is approximately equal to the channel thickness rather than the actual spacing between the 2DEG and the back gate (which is the channel thickness plus the LTG GaAs thickness). We explain this behavior by observing that the leakage path is limited by the triangular barrier to conduction formed at the interface between the LTG GaAs defect band and the undoped GaAs channel conduction band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113387
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  • 5
    Electronic Resource
    Electronic Resource
    Photon-assisted tunneling in GaAs/AlGaAs superlattices up to room temperature (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon-assisted transport is shown to be a remarkably robust phenomenon in sequential resonant superlattices with a large energy separation between the ground state and the first excited state of the quantum wells. Photon-assisted tunneling involving up to seven photons per tunneling event, stands out very clearly. The one-photon channel is observed up to 300 K. This implies that these superlattices are a gain medium at THz frequencies even at room temperature and potentially important for the future design of THz sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117679
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  • 6
    Electronic Resource
    Electronic Resource
    Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2020-2022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the fabrication of functional GaAs/AlGaAs field effect transistors using micromolding in capillaries—a representative soft lithographic technique. The fabrication process involved three soft lithographic steps and two registration steps. Room temperature characteristics of these transistors resemble those of field effect transistors fabricated by photolithography. The fabrication of functional microelectronic devices using multilayer soft lithography establishes the compatibility of these techniques with the processing methods used in device fabrication, and opens the door for their development as a technique in this area. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119774
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