Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 4193-4196
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We find two different surface structures, (1×2) and (1×1), for H2S-treated InP(001). They depend upon exposure of H2S at about 350 °C. The coverage of sulfur is estimated to be about a half monolayer and one full monolayer for the (1×2) and (1×1) structures, respectively. The (1×1) structure is reconstructed to the (1×2) structure upon annealing at about 550 °C. It is suggested that sulfur is bonded to only In atoms and substitutes some of the phosphorus atoms below the first layer. Inverse photoemission spectra show strong reduction in intensity of 1.2 eV peak above the Fermi level for a clean InP(001)-(4×2) surface upon adsorption of H2S. This reduction implies a decrease in unoccupied surface states due to dangling bonds of indium dimers on the clean surface. The result of adsorption of oxygen on the (1×2) and (1×1) surfaces indicates significant passivation to oxidation of the surfaces. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362660
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