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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 751-753 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The barrier thickness in magnetic spin-dependent tunnel junctions with Al2O3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al2O3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density–voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 985-987 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present evidence from soft x-ray resonant magnetic scattering measurements at the Mn L3 edge for the existence of a small magnetic moment on the antiferromagnetic IrMn pinning layer in a NiFe/Cu/Co/IrMn spin valve structure. The variation of the signal in an applied magnetic field shows that the moment lies antiparallel to the Co moment. Changes in the Mn L3 edge signal as the Co moment is rotated into the hard direction are rapid and do not appear to be associated with thermal reordering of the antiferromagnetic domain structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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