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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Radiative transitions in quaternary In0.52Ga0.18Al0.30As layers grown by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 898-904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and optical properties of molecular beam epitaxy-grown In0.52Ga0.18Al0.30As layers (E300 Kg(approximately-equal-to)1.18 eV), suitable for waveguide applications, have been studied by means of high-resolution x-ray diffraction, absorption, photoluminescence, photoreflectance, and high-excitation intensity photoluminescence spectroscopy. The combination of these techniques allowed us to study the free-exciton states, the impurity related transitions, and the formation of a dense electron-hole plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353302
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  • 2
    Electronic Resource
    Electronic Resource
    Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2459-2465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) and Raman measurements were performed on AlInAs grown lattice matched to InP by molecular beam epitaxy at reduced growth temperature (Ts). The PL of layers grown at Ts above 500 °C is dominated by excitonic emission, whereas for lower Ts donor-acceptor related transitions prevail. Below a critical Ts of 450 °C a marked shift towards lower emission energies with a maximum shift near 400 °C is observed that is attributed to a modified band edge due to clustering. Comparable trends are detected by Raman spectroscopy. The observed reduction of the separation of the InAs- and AlAs-like longitudinal optical phonon modes (LOInAs and LOAlAs) demonstrates local internal strain to be present as a result of clustering. This effect reaches a maximum for Ts at 400 °C. A shift of the LOInAs solely accounts for this behavior. In addition strong asymmetric broadening of the LOAlAs-phonon line observed on low Ts material indicates an increasing reduction of the correlation length and suggests the structural disorder to be correlated with the AlAs sublattice. Taking into account the pressure dependence of the AlInAs energy gap and the frequency shift of the LOInAs phonon, the local internal strain equivalent pressure was calculated from the PL and Raman results, respectively, giving similar values of up to 5 kbar for material grown at 400 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357597
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  • 3
    Electronic Resource
    Electronic Resource
    Picosecond laser dynamics of gain-coupled and index-coupled InGaAs/InGaAlAs quantum well distributed feedback lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 816-818 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High frequency modulation of gain-coupled (GC) and index-coupled (IC) InGaAs/InGaAlAs distributed feedback (DFB) lasers is investigated. Laser dynamics of conventionally fabricated IC DFB lasers are compared with GC DFB lasers realized by the new technology of masked implantation enhanced intermixing. Band structure dependence of the modulation response at low temperature (T=2K) is analyzed by detuning the emission energy of the DFB lasers with respect to the gain maximum using different grating periods. Pulse widths decreasing from 53 ps down to 4.5 ps with increasing emission energy demonstrate the capability of both coupling types. The experimental results are in excellent agreement with a theory without any fit parameter based on laser rate equations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115453
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  • 4
    Electronic Resource
    Electronic Resource
    Gain coupled distributed feedback lasers realized by masked implantation enhanced intermixing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3170-3172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long wavelength 1.3 μm gain coupled distributed feedback (GC-DFB) lasers were realized by masked implantation enhanced intermixing. On the basis of this full planar technology GC-DFB lasers with first and second order gratings were fabricated in the InGaAs/InGaAlAs system. The lasers show clear GC-DFB laser emission with a single mode yield of 69% and remain single mode up to several times laser threshold. The results are in good agreement with the theoretical description of our gain coupled lasers by optical matrix theory. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112471
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  • 5
    Electronic Resource
    Electronic Resource
    In situ native oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1406-1408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Removal of native oxide from Al0.24Ga0.24In0.52As layers grown lattice-matched onto InP substrates is successfully achieved by an in situ hydrogen radical treatment prior to molecular beam epitaxy (MBE) overgrowth. Cleaning conditions using moderate substrate temperatures not necessitating a surface stabilizing arsenic flux were elaborated, which ensured complete oxide removal without deterioration of the underlying AlGaInAs material. The surface quality as assessed by high energy electron diffraction, and the quality of epitaxial layers deposited onto this surface were found to be at least equivalent to that achieved with epitaxial growth directly on InP substrates, indicating the achievement of thorough oxide removal, low residual contamination levels, and a surface smoothness adequate for MBE regrowth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112066
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