ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Results of combined ac capacitance and conductance measurements on two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors fabricated in a silicon-on-insulator substrate formed by oxygen implantation are presented for the first time. We demonstrate the efficiency of the technique to investigate the presence of bulk traps presumably caused by metallic contaminants introduced during the high-energy oxygen implantation, as well as to determine the interface trap density at the buried oxide/Si substrate interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350338
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