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  • American Institute of Physics (AIP)  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal–oxide–silicon field-effect transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1575-1580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It was recently reported that plasma process-induced damage to metal–oxide–silicon field-effect transistors (MOSFETs) comprises a damage mechanism that involves alternating-current (ac) stressing of the oxide and the oxide/silicon interface. The study reported herein is aimed at establishing signatures of MOSFET damage induced by ac stressing applied at conditions that emulate plasma processing environment. We apply sinusoidal ac voltage stress signals to 0.5 μm n-channel or p-channel MOSFETs with 90-Å-thick gate oxides. We assess damage on MOSFETs by measuring transconductance, threshold voltage, and subthreshold swing. We find that the onset of damage to devices subjected to ac stressing occurs at voltage amplitudes as low as 4 V, whereas in dc stressing, applied for the same time, damage becomes significant only at dc voltages larger than 10 V. We also show that damage from ac stressing attains a maximum at frequencies in the range 1–100 kHz and decreases at frequencies above 5 MHz. It is proposed that carrier hopping is primarily responsible for oxide current and, hence, device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress when Fowler–Nordheim tunneling becomes the dominant conduction mechanism. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363892
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2270-2278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a comparative study of the damage induced in boron-doped Si by contact etching. The two approaches compared are conventional reactive ion etching and magnetically enhanced reactive ion etching (MERIE). The two structure-chemistry combinations used are SiO2/Si with CHF3/O2 plasmas, and bare Si wafers with CHF3/Ar plasmas. The damage examined in the Si substrates of both structures is that of electronic states in the band gap, the permeation into Si of hydrogen, and the deactivation of boron acceptors. These types of damage are explored by means of deep level transient spectroscopy and capacitance-voltage measurements on Ti/Si Schottky diodes fabricated on the etched substrate surfaces. The gap states induced by these contact etches are ascribed to interstitial-atom-related defects which are proposed to be formed as a result of interactions involving self interstitials. During etching these defects are observed to be both generated by the etching process itself as well as electrically passivated by permeating hydrogen. The hydrogen permeation of the substrate, monitored via acceptor deactivation, is seen to be enhanced for MERIE with increasing magnetic field intensities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357647
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  • 3
    Electronic Resource
    Electronic Resource
    Detection and comparison of localized states produced in poly-Si/ultra-thin oxide/silicon, structures by plasma exposure or plasma charging during reactive ion etching (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2091-2096 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach using two terminal current measurements obtained in a cyclic current–voltage sweeping procedure, is shown to be very useful in detecting damage in poly-Si/ultra-thin SiO2/substrate Si gate structures subjected to dry etching. The current peaks seen in this approach, are shown to be due to displacement currents and to have different features depending on whether the capacitor structures were subjected to plasma charging currents, or plasma photon/particle exposure during etching. A model is presented relating these features to localized states at or near the SiO2/substrate interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361067
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  • 4
    Electronic Resource
    Electronic Resource
    Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 517-525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New experimental results are presented which provide evidence for hydrogen passivation and depassivation of plasma-charging-induced defects in gate oxides and at oxide/silicon interfaces. The devices used in this study were 0.5 μm n-channel metal–oxide–semiconductor field-effect transistors fabricated on 200 mm boron-doped silicon substrates. The processing included Cl2/HBr-based chemistries for the polycrystalline silicon gate definition etch, and CHF3/CF4-based chemistries for the contact etch. Plasma-charging defects resulting from the processing are shown to have the following properties: (i) plasma-induced charging defects are latent (electrically inactive) directly after our processing and before postmetallization annealing (PMA); (ii) these defects continue to be latent after N2 and Ar anneals done at temperatures T in the range 200 °C≤T≤400 °C; (iii) these defects are also latent after our standard PMA done in forming gas at 400 °C; (iv) these defects are electrically activated by room-temperature Fowler–Nordheim stress, and (v) equivalently these defects are electrically activated by annealing below 400 °C in hydrogen-rich ambients. We show hydrogen passivation/depassivation is responsible for this behavior. This passivation/depassivation has been previously suggested to occur for defects at SiO2/Si interface; here it is also proposed to describe defect–hydrogen interactions in the bulk gate oxide for defects caused by plasma-charging damage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360860
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1690-1692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new type of damage, referred to here as inductive damage, induced by metal 1 plasma etching. The devices used in this study are lightly doped drain n-channel metal–oxide semiconductor field effect transistors (MOSFETs) fabricated on 200 mm p/p+ silicon wafers. The channel lengths of the investigated transistors are 0.5 μm with 90 A(ring) thick thermally grown gate oxides. The metal 1 main etch (duration 30 s) and overetch (50%) employed BCl3/N2/Cl2 chemistry and was done using a standard reactive ion etching tool operated at rf power of 600 W and rf frequency of 13.56 MHz. Specially designed MOSFETs with inductive metal loops connecting the gate and substrate or the gate and drain are used to examine inductive damage. Inductive damage is shown to arise from electrical stress of the gate oxide and oxide/Si interface by the electromotive force generated in the metal loops by the metal plasma etch. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115907
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic states created in p-Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 958-960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron-doped Si substrates. Etch-induced gap states in the substrate are monitored using deep-level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon-interstitial oxygen-interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108532
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