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  • 1
    Electronic Resource
    Electronic Resource
    Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 49-51 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the molecular beam epitaxial growth of Ge on Si(110) surfaces. High temperature cleaning (oxide desorption) results in the formation of shallow faceted pits distributed randomly on the Si(110) surface. Deposition of Ge at temperatures between 600 and 725 °C leads to preferential nucleation along the pit edges forming elongated islands, which subsequently grow to compact three-dimensional coherent islands. The observation of strained islands in close proximity to each other offers insights into their nucleation behavior and strain relaxation. Our observations suggest heterogeneous nucleation as a possible method for fabricating assemblies of quantum dots. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119301
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural development and optical properties of epitaxial Ge1−xCx alloys on Si(100) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2572-2574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the microstructural development and optical properties of epitaxial Ge1−xCx alloys (0〈x〈0.1) grown on Si(100) by low-temperature (200 °C) molecular-beam epitaxy. Films with C concentrations below 2%–3% grow in 2D layers, while films with C higher than 5% form 3D islands after initial layer growth. X-ray-diffraction indicates that less than 1% C may have been substitutionally incorporated. Spectroscopic ellipsometry measurements of the films' optical constants show small systematic changes with increasing C concentration. These changes occur primarily near 2 eV, the E1 critical point in Ge. No new features attributable to Ge–C vibrational modes could be identified using Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117703
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