Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 5192-5195
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Trapping centers produced by 250-keV, 400-keV, 700-keV, and 1.5-MeV proton irradiations at room temperature in AlGaAs-GaAs solar cells have been studied. The traps detected by deep-level transient spectroscopy are the same as those produced by electron irradiations, only their introduction rates are different. An introduction rate was determined for each trapping center at the various proton energies. The large concentration of the E4 trap suggests it is associated with a cluster-type defect.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.335255
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