Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 289-291
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We have fabricated fully patterned all-organic thin film transistors on glass substrates using the conducting polymer poly(3,4-ethylenedioxythiophene) for the gate electrodes and the source and drain contacts, poly-4-vinylphenol for the gate dielectric layer, and pentacene or poly-3-hexylthiophene for the organic active layer. All-organic pentacene transistors have carrier mobility as large as 0.1 cm2/V s and threshold voltage of 1 V, similar to pentacene transistors fabricated with high-quality inorganic gate dielectrics and noble-metal contacts. The carrier mobility of all-polymer poly-3-hexylthiophene transistors is somewhat lower compared with that of pentacene transistors, but similar to that of poly-3-hexylthiophene devices made with inorganic metals and dielectrics. © 2002 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1491604
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