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  • 1
    Electronic Resource
    Electronic Resource
    Electrochemical capacitance-voltage profiling of n-type ZnSe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5311-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report the first detailed study of electrochemical capacitance-voltage profiling of ZnSe. An electrolyte consisting of 1 M sodium hydroxide and 1 M sodium sulphite has been developed that does not deposit selenium while etching the surface of n-type ZnSe during C-V profiling. The dissolution number of the electrolyte/ZnSe system is a function of the strength of electrolyte and the etching current and in order to obtain an accurate etching depth a constant etching current mode was used. A wide range of doping concentrations including both uniformly doped and staircase structures have been measured demonstrating that the electrochemical C-V profiler can now be a routine tool for assessing the growth parameters of ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352016
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  • 2
    Electronic Resource
    Electronic Resource
    Nonuniform quantum well infrared photodetectors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 522-525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonuniform quantum well infrared photodetector (QWIP) structure is proposed. By changing the doping concentration and barrier width of each quantum well, the electric field distribution can be tailored. The nonuniform QWIPs show excellent performance compared with conventional uniform structures. The dark current is about an order of magnitude lower and the background limited temperature increases to 77 K. A detectivity of 2.0×1010 cm Hz1/2/W and a responsivity of 0.25 A/W at 8.2 μm have been obtained for these devices. A simple picture of electric field distribution within the structure is described to explain the results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371893
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  • 3
    Electronic Resource
    Electronic Resource
    Giant magneto-optical Kerr effect enhancement in layered CoMn/Si structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6788-6790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For sputtered Co57Mn43/Si film samples with different ferromagnetic thickness, the spectra of the complex magneto-optical polar Kerr rotation and optical constants were ex-situ measured. For 5 nm-thick Co57Mn43 film, the Kerr rotation around 4.3 eV was enhanced by a factor of about 10 times with lower loss of the signal intensity as compared to the thick film. Numerical calculations show that the enhancement effect is attributed to an interplay between optical properties of Co57Mn43 and substrate Si that has a strong interband transition (E2) near 4.3 eV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372842
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  • 4
    Electronic Resource
    Electronic Resource
    Magneto-optical characteristics of SiN/GdFe films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3744-3747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magneto-optical and optical properties of GdFe single layer films, which are covered with a thin Si3N4 layer, were studied in the visible wavelength region. A Kerr rotation peak and a reflectivity drop were observed near 4.1 eV in GdFe alloyed films and attributed to the Gd element. Compared with the single thick GdFe film, the Kerr effect of SiN/GdFe bilayers was enhanced, due to the optical interference between Si3N4 and GdFe. The Kerr rotation of GdFe films showed a nonlinear function of the compositions in the whole measured wavelength range. Magneto-optical measurements directly evidence the spin–flip in the GdFe films as the Gd content increased from 20.7 to 24.2 at. %, which showed advantages over conventional magnetometry. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336562
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  • 5
    Electronic Resource
    Electronic Resource
    Multichannel Raman spectrometry system for weakly scattering materials at simultaneous high pressures and high temperatures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2821-2827 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Raman system is described which is suitable for rapid determination of Raman spectra of silicates and other weak Raman scatterers under simultaneous high-pressure and high- temperature conditions. Samples are pressurized with an argon pressure medium and Sm:YAG pressure standard in an Inconel 718 or rhenium Merrill–Bassett diamond–anvil cell that is externally heated in a vacuum oven equipped with quartz windows on either side. Raman spectra are excited and collected through the front window using ≈160° scattering geometry. A triple spectrometer in conjunction with a holographic notch filter, disperses the Raman scattered radiation onto a liquid-nitrogen-cooled CCD detector. Simultaneously measured Sm:YAG fluorescence spectra are collected through the rear window and routed via an optical fiber to a second multichannel spectrometer system equipped with a diode-array detector. The high sensitivity of the detectors and the simultaneous measurement technique enable detection of and compensation of pressure drifts occurring at high temperature. The performance of the system is demonstrated by measurement of the positions and linewidths of the high-frequency Raman modes of polycrystalline forsterite (α-Mg2SiO4) at temperatures up to 930 K at pressures of ∼8 GPa and up to 842 K at pressures in the range 12–14 GPa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144368
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  • 6
    Electronic Resource
    Electronic Resource
    Spatial and temporal beam reshaping effects using bulk CdTe (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2932-2939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reshaping effects of ns pulses were theoretically and experimentally investigated using bulk CdTe. The experiments were performed using a 1.064 μm Nd:YAG laser with pulse duration of 10 ns. We observed that the laser pulses emerging from the sample experienced temporal compression and modulation which were found to be dependent on the input irradiance, the distance from the exit surface of the sample, and the cross sectional area detected. Self-defocusing and the formation of ring structures were also observed in the transmitted spatial profile and were found to be dependent on the input irradiance and the position of the detector from the sample. In our model we assumed that the free carriers generated by the two-photon absorption process were responsible for the induced nonlinear change in the index of refraction. As a result, the temporally and radially dependent phase shift encoded to the field that emerged from the sample was the cause of the reshaping effect. The results of our model, for both the spatial and the temporal profiles, are in good agreement with the experimental results. Moreover, the nonlinear parameters deduced from the fitting are in good agreement with previous experimental and theoretical results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360039
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  • 7
    Electronic Resource
    Electronic Resource
    Surface modification of YBa2Cu3Oy thin films with a scanning tunneling microscope (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2535-2537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic modification of thin YBa2Cu3Oy films with a scanning tunneling microscope. The samples include YBa2Cu3Oy films on MgO(001) and YBa2Cu3Oy/PrBa2Cu3Oy bilayer films on SrTiO3 (001). The bias voltage of the tip was kept negative and varied from −600 to −1200 mV. The tip was operated in a constant tunneling current mode with tunneling current 0.3–0.7 nA and scanning rate 1 Hz. Modification of the surface begins with nucleation of holes, or at the edge of a dislocation or protrusion on the surface, and is achieved by successively scanning a fixed area. We show the image obtained from an atomic force microscope which can help us look into the mechanism of the modification.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357566
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  • 8
    Electronic Resource
    Electronic Resource
    II–VI quantum confined Stark effect waveguide modulators (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 946-948 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum confined Stark effect p-i-n waveguide modulators, grown on GaAs substrates by molecular beam epitaxy and using an undoped ZnSe/ZnCdSe multiquantum well structure as the guiding layer, have exhibited intensity modulation at wavelengths of 496 and 501 nm with extinction ratios of 6 and 4, respectively. These same devices have also demonstrated a transverse linear electro-optic effect observed as a superimposed secondary effect on the lateral intensity modulation at 514 nm in the form of phase modulation in the output of the same device. Intensity modulation has also been observed in quaternary laser waveguide structures, indicating that this is a device structure which is suitable for monolithic integration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116107
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  • 9
    Electronic Resource
    Electronic Resource
    Ground state properties of a high-spin Mn12O12 molecule in an organic compound : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7100-7102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure and the magnetism of a Mn12O12 molecule at ground state have been studied by density functional theory with a local spin density approximation. We have found that the magnetic moments of Mn ions in the tetrahedron and those of Mn ions in the crown of the Mn12O12 molecule align antiferromagnetically. The average moment per Mn ion is about 3.07μB in the tetrahedron and 4.07μB in the crown. The total spin amounts to 20.0μB which is in agreement with recent experimental results. The significant difference of magnetic moments between Mn ions at two sites is attributed to the different exchange splitting of 3d orbitals. However, the charge difference between the two kinds of Mn ions is as small as 0.22 electrons. The charge density and the spin density exhibit strong directional dependence, which indicates the strong anisotropy in this molecule. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367750
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  • 10
    Electronic Resource
    Electronic Resource
    Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2680-2683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 8–12 μm InGaAs/GaAs quantum well infrared photodetectors with two different well doping concentrations have been studied. The devices with and without surface gratings are compared for normal incident operation. It is found that the TE to TM absorption ratio depends on the doping density in the quantum wells. A higher doping density increases TE absorption. A detectivity about 1×1010 cm Hz1/2/W and a peak responsivity of 0.23 A/W at 9 μm have been obtained for the grating-free devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366084
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