Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 644-649
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Cu3Ge films have been found to have a low resistivity, good adhesion onSiO2, good thermal stability on Si, and good oxidation resistance. It has the potential as an ideal adhesion/barrier/passivation layer for Cu ultralarge scale integration metallization. The kinetics of Cu3Ge formation and the thermal stability ofCu3Ge against Al were studied by in situ resistivity measurement, Rutherford backscattering spectrometry, and transmission electron microscopy. We found that Cu reacted with Ge in the temperature range of 100–200 °C. The activation energy of the Cu–Ge compound formation was found to be 1.1±0.1 eV. The Cu–Ge compound was identified asε-Cu3Ge from transmission electron microscope diffraction patterns. Upon annealing theε-Cu3Ge became unstable on Al at the temperature range of 300–350 °C. In the reaction between Al andCu3Ge, Cu preferentially reacted with Al to form anε-Al2Cu3 compound. The activation energy of formation of the Al–Cu compound was found to be 2.1±0.1 eV. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366291
Permalink
|
Location |
Call Number |
Expected |
Availability |
