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  • 1
    Electronic Resource
    Electronic Resource
    Surface plasmon resonance microscopy: Reconstructing a three-dimensional image (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1330-1331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for reconstructing three-dimensional images of thin films from surface plasmon resonance (SPR) microscopy images is described. As an example, monolayers of a lipid were deposited onto a gold substrate using Langmuir–Blodgett technology and an SPR microscope image obtained. Using data from reflectance-angle (R-θ) curves obtained in supplementary measurements, the contrast in the microscope image was used to provide thickness information. Converted to a z modulation this was used to produce a three-dimensional image of the monolayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111924
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  • 2
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    InGaN based micro light emitting diodes featuring a buried GaN tunnel junction (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-07
    Description: GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10 20  cm −3 , thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g.,
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Optical and magneto-optical properties of Au:Conanoparticles and Co:Aunanoparticles doped magnetoplasmonic systems (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-02-03
    Description: We report a study of Au:Co NPs and Co:Au NPs doped magnetoplasmonic systems. In particular, we analyze the effect of adding different concentrations of Co (or Au) nanoparticles (NPs) in a Au (or Co) matrix on both the optical and magneto-optical constants. Through the use of a simple effective medium model, relevant changes in the optical properties of the Au NPs compared to those of bulk material have been identified. Such effects are not observed in the Co NPs system. However, in both systems, there is an increase of the effective diameter of the NPs as compared to the real diameter that can be due to interface effects surrounding the NPs. Moreover, the magneto-optical constants values of both systems are smaller (in absolute values) than expected, which could also be attributed to interface effects such as hybridization between Au and Co.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Spin selective filtering of polariton condensate flow (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-07-08
    Description: Spin-selective spatial filtering of propagating polariton condensates, using a controllable spin-dependent gating barrier, in a one-dimensional semiconductor microcavity ridge waveguide is reported. A nonresonant laser beam provides the source of propagating polaritons, while a second circularly polarized weak beam imprints a spin dependent potential barrier, which gates the polariton flow and generates polariton spin currents. A complete spin-based control over the blocked and transmitted polaritons is obtained by varying the gate polarization.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    The peaceful atom comes to campus (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-30
    Description: Youthful idealism, institutional ambition, and Cold War sensibilities all helped shape the Michigan Memorial–Phoenix Project, the University of Michigan’s tribute to fallen World War II soldiers.
    Print ISSN: 0031-9228
    Electronic ISSN: 1945-0699
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-12-16
    Description: We demonstrate state-of-the-art p- type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH 3 -MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p- type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10 −4  Ω cm 2 , respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n- type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p- doped waveguide and cladding layers grown by NH 3 -MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2  μ m 2 ridge dimension and a threshold current density of ∼5 kA cm −2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p -type Al 0.06 Ga 0.94 N:Mg despite the low growth temperature.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    High-efficiency AlGaInP solar cells grown by molecular beam epitaxy (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-10-28
    Description: AlGaInP is an ideal material for ultra-high efficiency, lattice-matched multi-junction solar cells grown by molecular beam epitaxy (MBE) because it can be grown lattice-matched to GaAs with a wide 1.9–2.2 eV bandgap. Despite this potential, AlGaInP grown by molecular beam epitaxy (MBE) has yet to be fully explored, with the initial 2.0 eV devices suffering from poor performance due to low minority carrier diffusion lengths in both the emitter and base regions of the solar cell. In this work, we show that implementing an AlGaInP graded layer to introduce a drift field near the front surface of the device enabled greatly improved internal quantum efficiency (IQE) across all wavelengths. In addition, optimizing growth conditions and post-growth annealing improved the long-wavelength IQE and the open-circuit voltage of the cells, corresponding to a 3× increase in diffusion length in the base. Taken together, this work demonstrates greatly improved IQE, attaining peak values of 95%, combined with an uncoated AM1.5G efficiency of 10.9%, double that of previously reported MBE-grown devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
    Electronic Resource
    Electronic Resource
    Ambipolar diffusion and carrier lifetime measurements in all-binary (InAs)2(GaAs)5 strained quantum wells grown on GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1868-1873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-well ambipolar diffusion coefficients and carrier lifetimes in ordered all-binary quantum wells, composed of (InAs)2(GaAs)5 short-period strained-layer superlattices (SPSLSs) grown on [001]-oriented GaAs substrates, are measured using picosecond optically induced transient grating and pump-probe techniques. Quantum wells containing SPSLSs may be expected to exhibit higher in-plane hole mobilities compared to InGaAs ternary alloy quantum wells because of a larger average indium content and reduced disorder scattering in the SPSLS structures. The results obtained in the SPSLSs are compared to those obtained in InGaAs alloy quantum wells of comparable well width and confinement energies. This indicates that, for a given SPSLS and its equivalent alloy, the ambipolar diffusion coefficients are comparable while the carrier lifetimes in the SPSLSs are longer. The longer carrier lifetimes in the SPSLSs suggest that these binary structures possess fewer nonradiative recombination centers than the alloys. The absence of a dramatic improvement in the transport properties, however, may indicate that imperfect interfaces in the SPSLSs may be offsetting their possible advantages, in spite of the fact that optical measurements in the SPSLSs indicate high quality and x-ray and transmission electron microscopic measurements demonstrate the binary nature of these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355301
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of the Γ8v-Γ6c gap of GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2742-2747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) peak positions of the ground state heavy and light-hole excitons on high-quality Molecular Beam Epitaxy grown GaAs/AlxGa1−xAs (x=0.3 and 1) multiquantum-well structures have been experimentally determined in the temperature range 4.2≤T≤340 K. Using these values and the well-known low-temperature energy of the GaAs Γ8V-Γ6C gap [EgΓ(GaAs,T=0 K)=1.5192 eV], we propose the temperature dependence to be EgΓ(GaAs,T)= 1.5192+5.16×10−5×T−1.99×10−6×T2 +2.60×10−9×T3 (EgΓ in eV). The nearly linear variation of EgΓ(GaAs,T) versus the temperature in the range 170 K≤T≤340 K can be approximated by a coefficient (dEgΓ/dT)=−4.4×10−4 eV/K, in excellent agreement with theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354674
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature optical nonlinearities in strained (InAs)2(GaAs)5 superlattice quantum wells (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3243-3248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room-temperature measurements of the nonlinear absorption cross section, σeh, and the nonlinear refraction coefficient, neh, associated with saturation of excitonic absorption and bandfilling, for high-quality multiple quantum well (MQW) structures in which each well consists of a highly strained, all binary (InAs)2(GaAs)5 short-period superlattice. The three samples studied, which have effective well thicknesses of 10.7, 14.8, and 18.8 nm, respectively, each display clearly resolved excitonic resonances at room temperature. Picosecond nonlinear transmission and transient grating measurements were performed on each sample in the spectral vicinity of the n = 1 heavy-hole excitonic resonance. The peak values of neh and σeh extracted from these measurements are comparable to those measured in high-quality GaAs/AlGaAs and unstrained InGaAs/InP MQWs. We determine the dependence of σeh and neh on the width of the quantum wells, and we discuss the fluence dependence of the nonlinearities. Consistency between the differential transmission and transient grating diffraction efficiency is demonstrated via a Kramers–Kronig analysis of the differential transmission spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348544
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