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  • Articles  (4)
  • American Institute of Physics (AIP)  (4)
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  • Articles  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Semi-insulating InP grown at low temperature by metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 359-361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of semi-insulating epitaxial InP layers at low substrate temperature (460 °C) by low-pressure metalorganic chemical vapor deposition has been demonstrated using CCl4 as a dopant source. The resistivity of the material is a function of diluted CCl4 flow rate used during growth. For flow rates less than 5 sccm the material is n type, but for higher flows the resistivity of the material is approximately 5×109 Ω cm. The semi-insulating behavior of the material is maintained after annealing at 600 °C. Transmission electron microscopy does not reveal the presence of phosphorus precipitates in as-grown samples or in samples annealed at 400 and 600 °C. There is significant carbon, hydrogen, and chlorine incorporation in the layers, as measured by secondary ion mass spectrometry. Room-temperature photoluminescence measurements suggest that nonradiative recombination is significant in the material and increases in samples grown with higher CCl4 flows.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112374
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  • 2
    Electronic Resource
    Electronic Resource
    High-efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2867-2869 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient vapor source Si doping of InP and In0.53Ga0.47As have been demonstrated using SiBr4 as the Si source for both gas source (GSMBE) and metalorganic molecular beam epitaxy (MOMBE). Net electron concentrations ranging from n=2×1017 to 6.8×1019 cm−3 and from 9×1016 to 3×1019 cm−3 have been obtained for InP and In0.53Ga0.47As, respectively. Comparison of these data with those for Si2H6 indicate that the Si incorporation efficiency with SiBr4 is more than 10 000 times greater than with Si2H6 for substrate temperatures in the range of 475≤Ts≤500 °C. Specular surface morphologies were obtained, even for the most heavily doped samples. While [Si] as high as 1.8×1020 cm−3 was obtained in InP, the net electron concentrations and 300 K Hall mobilities decrease with increasing [Si] for [Si](approximately-greater-than)6.8×1019 cm−3. Contact resistances as low as Rc=3×10−8 Ω cm2 were obtained using a nonalloyed Ti/Pt/Au contact to InP layers doped to n=6.3×1019 cm−3. During GSMBE growth, an increased Si background concentration ([Si]∼2×1017 cm−3) was observed after extended use of the SiBr4 source for these heavy doping concentrations. This increased background was not observed in MOMBE-grown material. Depth profiles of pulse-doped structures indicate the absence of memory effects for structures grown by MOMBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111420
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on the electrical properties of CCl4-doped semi-insulating InP (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3004-3006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of semi-insulating InP epitaxial layers grown by metalorganic chemical vapor deposition using CCl4 as a doping source have been studied as a function of the growth conditions of the material. Secondary ion mass spectrometry has been used to analyze the incorporation of impurity species in these layers. These measurements indicate that the resistivities of the CCl4-doped InP layers increase exponentially (exceeding 1012 Ω cm) with increasing growth temperature. The incorporation of C, H, and Cl decreases in these layers. In conjunction with the dependence of the resistivity on the flow rate of the diluted CCl4 dopant during growth, these results suggest that the semi-insulating nature of the InP layers is due to CCl4-mediated incorporation of one or more defects during growth. It is not likely that either a deep level created by Cl or hydrogen passivation of shallow donors and acceptors is responsible for the electrical properties of this material. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114933
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of AsH3 cracking temperature on the H passivation of C acceptors in In0.53Ga0.47As grown by beam epitaxy techniques (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1939-1941 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of subhydride species generated in a low-pressure Ta-based AsH3 cracker on the degree of H passivation of C acceptors in heavily doped (p≥3×1019 cm−3) In0.53Ga0.47As grown by gas source and metalorganic molecular beam epitaxy has been studied. A strong correlation has been observed between the relative abundance of AsH3, AsH, and H in quadrupole mass spectra and the degree of passivation. Enhanced effects were observed at reduced growth temperatures. Design of experiments techniques have been used to study the influence of hydride cracker temperature, substrate temperature, H2 pumping speed, group III sources, AsH3 flow rate and the second order interactions on the H passivation of C acceptors. The substrate temperature, hydride cracking temperature, and H2 pumping speed, were determined to have the dominant effects, while second order interactions were dominated by substrate temperature, H2 pumping speed, and AsH3 flow rate interactions with the hydride cracking temperature. Optimized parameters were determined that permit the growth of essentially unpassivated (≤10%) C-doped In0.53Ga0.47As with net hole concentrations as high as p=8×1019 cm−3 by both gas source and metalorganic molecular beam epitaxy techniques. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117628
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