ALBERT

Description: A new approach for wall modeling in Large-Eddy-Simulations (LES) is proposed and tested in various applications. To properly include near-wall physics while preserving the basic economy of equilibrium-type wall models, we adopt the classical integral method of von Karman and Pohlhausen (VKP). A velocity profile with various parameters is proposed as an alternative to numerical integration of the boundary layer equations in the near-wall zone. The profile contains a viscous or roughness sublayer and a logarithmic layer with an additional linear term that can account for inertial and pressure gradient effects. Similar to the VKP method, the assumed velocity profile coefficients are determined from appropriate matching conditions and physical constraints. The proposed integral wall-modeled LES (iWMLES) method is tested in the context of a pseudo-spectral code for fully developed channel flow with a dynamic Lagrangian subgrid model as well as in a finite-difference LES code including the immersed boundary method and the dynamic Vreman eddy-viscosity model. Test cases include a fully developed half-channel at various Reynolds numbers, a fully developed channel flow with unresolved roughness, a standard developing turbulent boundary layer flows over smooth plates at various Reynolds numbers, over plates with unresolved roughness, and a case with resolved roughness elements consisting of an array of wall-mounted cubes. The comparisons with data show that the proposed iWMLES method provides accurate predictions of near-wall velocity profiles in LES while, similarly to equilibrium wall models, its cost remains independent of Reynolds number and is thus significantly lower compared to existing zonal or hybrid wall models. A sample application to flow over a surface with truncated cones (representing idealized barnacle-like roughness elements) is also presented, which illustrates effects of subgrid scale roughness when combined with resolved roughness elements.

Description: We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a non-magnetic material.

Description: A two-dimensional (2D) material, the holey 2D C 2 N ( h 2D-C 2 N) crystal, has recently been synthesized. Here, we investigate the strain effects on the properties of this material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains ≥ 12 % . It remains a direct gap semiconductor under strain, and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient ∼ 10 6  cm −1 covering a wide spectrum. Our findings suggest the great potential of strain-engineered h 2D-C 2 N in electronic and optoelectronic device applications.

Description: A multi-pulsed intense electron beam source is introduced, including the design and the initial experimental results. The source can generate a burst of three pulses of intense electron beams with energy of 2–3 MeV and beam intensities of around 2.5 kA. An inductive adder is chosen to generate the pulsed diode voltages and a dispenser cathode is chosen to emit electron beams. The test results indicate that the design of the source is reliable. The multi-pulsed diode voltage is up to 2.5 MV and the beam intensities are more than 2 kA at the exit of the source with small variation.

Description: This paper reports on the studies of anisotropic heat conduction phenomena in Mo/Si multilayers with individual layer thicknesses selected to be smaller than the mean free path of heat carriers. We applied the frequency-domain thermoreflectance technique to characterize the thermal conductivity tensor. While the mechanisms of the cross-plane heat conduction were studied in detail previously, here we focus on the in-plane heat conduction. To analyze the relative contribution of electron transport to the in-plane heat conduction, we applied sheet-resistance measurements. Results of Mo/Si multilayers with variable thickness of the Mo layers indicate that the net in-plane thermal conductivity depends on the microstructure of the Mo layers.

Description: We report a widely tunable optically pumped distributed Bragg reflector (DBR)-free semiconductor disk laser with 6 W continuous wave output power near 1055 nm when using a 2% output coupler. Using only high reflecting mirrors, the lasing wavelength is centered at 1034 nm and can be tuned up to a record 80 nm by using a birefringent filter. We attribute such wide tunability to the unique broad effective gain bandwidth of DBR-free semiconductor disk lasers achieved by eliminating the active mirror geometry.

Description: We investigated a bilayer catalyst system consisting of polycrystalline Ni and W films for growing mono-layer graphene over large areas. Highly uniform graphene was grown on Ni/W bilayer film with 100% coverage. The graphene grown on Ni/W bilayer film and transferred onto an insulating substrate exhibited average hole and electron mobilities of 727 and 340 cm 2 V −1 s −1 , respectively. A probable growth mechanism is proposed based on X-ray diffractometry and transmission electron microscopy, which suggests that the reaction between diffused carbon and tungsten atoms results in formation of tungsten carbides. This reaction allows the control of carbon precipitation and prevents the growth of non-uniform multilayer graphene on the Ni surface; this has not been straightforwardly achieved before. These results could be of importance in better understanding mono-layer graphene growth, and suggest a facile fabrication route for electronic applications.

Description: Graphitic carbon nitride materials show some promising properties for applications such as photocatalytic water splitting. However, the conversion efficiency is still low due to factors such as a low surface area and limited light absorption. In this paper, we describe a “triple templating” approach to generating porous graphitic carbon nitride. The introduction of pores on several length-scales results in enhanced photocatalytic properties.

Description: Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.

Description: We show that circularly polarized emission light from InGaAs/GaAs quantum dot (QD) ensembles under optical spin injection from an adjacent GaAs layer can switch its helicity depending on emission wavelengths and optical excitation density. We attribute this anomalous behavior to simultaneous contributions from both positive and negative trions and a lower number of photo-excited holes than electrons being injected into the QDs due to trapping of holes at ionized acceptors and a lower hole mobility. Our results call for caution in reading out electron spin polarization by optical polarization of the QD ensembles and also provide a guideline in improving efficiency of spin light emitting devices that utilize QDs.