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  • American Institute of Physics (AIP)  (3)
  • Wiley-Blackwell  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Leakage current characteristics of laser-ablated SrBi2Nb2O9 thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 880-882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the leakage current conduction mechanism of pulsed-laser-deposited SrBi2Nb2O9 (SBN) thin films on platinized silicon substrates. The time-dependent dc leakage current densities of SBN thin films do not follow Curie–von Schweidler power law. Instead the contribution of conduction current is predominantly electronic. At lower fields, the leakage current follows the ohmic behavior, and it increases exponentially for higher fields. The leakage current density of the SBN thin films was studied at elevated temperatures, and the data were fitted with the Schottky emission model. The effective Richardson's constant was calculated to be about 8.7×10−6 A/cm2 K2. The Schottky barrier height of the SBN thin films was estimated to be 1.37 eV. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495880
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  • 2
    Electronic Resource
    Electronic Resource
    CaBi2Ta2O9 ferroelectric thin films prepared by pulsed laser deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2925-2927 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of CaBi2Ta2O9 (CBT) were deposited on Pt/TiO2/SiO2/Si substrates using the pulsed laser deposition technique at temperatures ranging from 500 to 700 °C. The presence of (115) and (0010) orientations confirm the phase formation at the lower temperature (500 °C). Microstructure evolution of CBT films with oxygen pressure of 100–200 mTorr at a substrate temperature of 650 °C shows that the films deposited at lower pressure have a relatively smaller grain size and less surface roughness. The films grown at 650 °C exhibited a maximum polarization of (2Pm) 17 μC/cm2, remanent polarization of (2Pr) 8 μC/cm2 and coercive field of (Ec) 128 kV/cm, with fatigue endurance up to 1010 switching cycles. The higher dielectric constant (∼115 at 100 kHz) with a relatively lower dissipation factor (0.02) at higher growth temperature (700 °C) was explained by the increased grain size. The higher leakage current density (∼10−7 A/cm2) at higher deposition temperature is attributed to the interfacial diffusion of the film and the substrate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370545
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  • 3
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of laser-ablated Sr1−xAxBi2Ta2O9 thin films (where A=Ba, Ca) (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 637-639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bismuth-layered ferroelectric thin films of Sr1−xAxBi2Ta2O9, with composition x=0 and 0.2, were fabricated by using the pulsed-laser deposition technique. Structural characterization of the films by x-ray diffraction and atomic force microscopy, revealed that the films are polycrystalline in nature with average grain size of 180 nm. The films displayed spherical grains with a surface roughness of 12 nm. The ferroelectric measurements of Sr0.8Ba0.2Bi2Ta2O9, SrBi2Ta2O9, and Sr0.8Ca0.2Bi2Ta2O9 showed saturated hysteretic behavior with remanent polarization (2Pr) of 23.5, 17.9, 14 μC/cm2 and coercive field (Ec) of 31.06, 74.2, 86.3 kV/cm for a maximum applied electric field of 360 kV/cm. Films exhibited minimal (≤17%) degradation of polarization for up to 1010 switching cycles. It was observed that the coercive field decreased with increase in the ionic size of partially substituted cations. The leakage current density of films were found to be of the order of ∼10−8 A/cm2 for up to a breakdown field of about 75 kV/cm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436528
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  • 4
    Electronic Resource
    Electronic Resource
    Foreword (1981)
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 10 (1981), S. iii 
    Details
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jrs.1250100102
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