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  • American Institute of Physics (AIP)  (2)
  • Wiley-Blackwell  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 179-181 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs quantum well (QW) lasers with distributed Bragg reflection (DBR) Al0.3Ga0.7As/GaAs superlattice gratings have been fabricated by the single-step, maskless focused ion beam (FIB) mixing. 200 keV Si++ FIB implantation with a beam diameter of ∼60–70 nm and a dose of 1014 cm−2 was used to obtain localized compositional mixing. The DBR grating period was 350 nm, corresponding to a third order grating matched to the emission from the 30 nm wide QW. Lasing operation was examined by optical pumping. With a pumping power 1.6× the threshold value, lasing modes were observed near 827 nm, with a spacing of 3 A(ring) and a linewidth of 1.5 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 526-528 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selectively oxidized vertical cavity surface emitting lasers (VCSELs) have been studied by spectrally resolved near-field scanning optical microscopy. We have obtained spatially and spectrally resolved images of both subthreshold emission and lasing emission from a selectively oxidized VCSEL operating at a wavelength of 850 nm. Below threshold, highly local high gain regions, emitting local intensity maxima within the active area, were observed; these were found to serve as lasing centers just above threshold. Above threshold, the near-field spatial modal distributions of low order transverse modes were identified by spectrally analyzing the emission; these were found to be complex and somewhat different from those measured in the far field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 56 (1995), S. 1039-1044 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Plasma-polymerized hexamethyldisiloxane (HMDS) films have been prepared as both planar and channel wave guides. The optical attenuation results measured in both the planar and channel HMDS wave guides were found to be similar, thus demonstrating that the inherent solvent resistance and chemical inertness of the plasma polymerized films allows the use of common photoresist techniques, including application of the photoresist, photomasking, and subsequent etching. This may be contrasted with wave guides made from conventional polymers, where careful consideration must be given to photoresist/polymer compatibility, because the photoresist solvents may adversely affect the underlying polymer and lead to degradation of the material during processing. © 1995 John Wiley & Sons, Inc.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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