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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 752-756 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1193-1195 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Bi2VO5.5 have been prepared epitaxially using a pulsed-laser deposition method on a Si(100) substrate using TiN as a buffer layer and SrTiO3 as a seed layer. The films have smooth surface morphology with atomically flat terraces and steps of 4 Å in height. The ferroelectric characterization shows a spontaneous polarization of 2.2 μC/cm2 and a coercive field (Ec) of 22 kV/cm. The leakage current obtained is about 5×10−6 A/cm2 at a drive voltage of ±2 V. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 90-92 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorption recovery of a photoexcited InGaP epitaxial film 0.4 μm thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300–50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D(approximately-greater-than)2.8 cm2/s and a surface recombination velocity of S(approximately-greater-than)4×105 cm/s at room temperature.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2322-2324 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x-ray diffraction studies indicate that the narrow interfacial regions are locally strained as a result of the growth sequence during gas-source molecular beam epitaxy.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 140-142 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of single-crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas-source MBE in order to reduce the density of dislocations created by the 8% InP-Si lattice mismatch. Double-crystal x-ray diffraction revealed that all buffer layers produced large-area single-crystal (100) InP films with the InP lattice tilted towards the 〈100〉 Si directions. A buffer layer of four Inx Ga1−x P/Iny Ga1−y P strained superlattices produced a specular InP film with an estimated dislocation density of 108 –109 cm−2 and a residual stress of less than 5×10−4.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1016-1018 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×1016 and 2.7×1016 cm−3. A sample with an InSb thickness of 8 μm exhibited room-temperature mobilities as high as 55 000 cm2/V s with carrier concentrations of about 2.0×1016 cm−3. A sharp band-edge transmission spectrum is observed at room temperature for the 8 μm layer.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3928-3932 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect levels in n-type Si Schottky barrier diodes made by resistive evaporation have been investigated by deep level transient spectroscopy. Three defect levels are observed at 0.16, 0.14, and 0.12 eV below the conduction band. The concentrations of the defect levels exponentially decrease into the substrate. The defects are introduced during etching process rather than evaporation process. The concentration of the defects increase with the thickness of the layer removed by etching before Schottky metal deposition, and decrease with the etching rate. This suggests that the defect levels are produced near the surface and are driven into the substrate during etching processes.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2669-2671 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization-dependent optical gain of recently demonstrated CdZnSe/ZnSe quantum well lasers is calculated for the first time. Our analysis is based on the multiband effective mass theory (k⋅p theory) and the density matrix formalism with intraband relaxation taken into account. It is shown theoretically that the TE mode gain is significantly larger than the TM mode gain for a wide range of carrier density. Comparison of the room-temperature TE mode gain of CdZnSe/ZnSe quantum well with that of GaAs/AlGaAs quantum well gives disappointing results for the II-VI semiconductor lasers. It is expected that the optical gain of the ZnSe-based semiconductor lasers would be substantially smaller than the optical gain of the GaAs-based semiconductor lasers for a same quantum well width and carrier density.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 9637-9648 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reaction of ground state carbon atoms, C(3Pj), with dimethylacetylene, H3CCCCH3, was studied at three collision energies between 21.2 and 36.9 kJmol−1 employing the crossed molecular beam approach. Our experiments were combined with ab initio and RRKM calculations. It is found that the reaction is barrierless via a loose, early transition state located at the centrifugal barrier following indirect scattering dynamics through a complex. C(3Pj) attacks the π system of the dimethylacetylene molecule to form a dimethylcyclopropenylidene intermediate either in one step via an addition to C1 and C2 of the acetylenic bond or through an addition to only one carbon atom to give a short-lived cis/trans dimethylpropenediylidene intermediates followed by ring closure. The cyclic intermediate ring opens to a linear dimethylpropargylene radical which rotates almost parallel to the total angular momentum vector J. This complex fragments to atomic hydrogen and a linear 1-methylbutatrienyl radical, H2CCCCCH3(X2A″), via a tight exit transition state located about 18 kJmol−1 above the separated products. The experimentally determined exothermicity of 190±25 kJmol−1 is in strong agreement with our calculated data of 180±10 kJmol−1. The explicit verification of the carbon versus hydrogen exchange pathway together with the first identification of the H2CCCCCH3 radical represents a third pathway to form chain C5H5 radicals in the reactions of C(3Pj) with C4H6 isomers under single collision conditions. Previous experiments of atomic carbon with the 1,3-butadiene isomer verified the formation of 1- and 3-vinylpropargyl radicals, HCCCHC2H3(X2A″), and H2CCCC2H3(X2A″), respectively. In high-density environments such as combustion flames and circumstellar envelopes of carbon stars, these linear isomers can undergo collision-induced ring closure(s) and/or H atom migration(s) which can lead to the cyclopentadienyl radical. The latter is thought to be a crucial reactive intermediate in soot formation and possibly in the production of polycyclic aromatic hydrocarbon molecules in outflow of carbon stars. Likewise, a H atom catalyzed isomerization can interconvert the 3-vinylpropargyl and the 1-methylbutatrienyl radical. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 9622-9636 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The reaction between ground state carbon atoms, C(3Pj), and 1,3-butadiene, H2CCHCHCH2, was studied at three averaged collision energies between 19.3 and 38.8 kJmol−1 using the crossed molecular beam technique. Our experimental data combined with electronic structure calculations show that the carbon atom adds barrierlessly to the π-orbital of the butadiene molecule via a loose, reactantlike transition state located at the centrifugal barrier. This process forms vinylcyclopropylidene which rotates in a plane almost perpendicular to the total angular momentum vector J around its C-axis. The initial collision complex undergoes ring opening to a long-lived vinyl-substituted triplet allene molecule. This complex shows three reaction pathways. Two distinct H atom loss channels form 1- and 3-vinylpropargyl radicals, HCCCHC2H3(X2A″) and H2CCCC2H3(X2A″), through tight exit transition states located about 20 kJmol−1 above the products; the branching ratio of 1- versus 3-vinylpropargyl radical is about 8:1. A minor channel of less than 10% is the formation of a vinyl, C2H3(X2A′), and propargyl radical C3H3(X2B2). The unambiguous identification of two C5H5 chain isomers under single collision has important implications to combustion processes and interstellar chemistry. Here, in denser media such as fuel flames and in circumstellar shells of carbon stars, the linear structures can undergo a collision-induced ring closure followed by a hydrogen migration to cyclic C5H5 isomers such as the cyclopentadienyl radical—a postulated intermediate in the formation of polycyclic aromatic hydrocarbons (PAHs). © 2000 American Institute of Physics.
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