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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4981-4983 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PrOx thin films have been grown epitaxially on r-plane sapphire by pulsed laser deposition. The films have (100) orientation if grown at 800 °C, and twinned (111) at lower substrate temperatures. The lattice constant of the PrOx film can be varied by thermal treatment at different oxygen partial pressures. a axis-oriented YBa2Cu3O7−δ films have been grown epitaxially on (100) Pr6O11 layers.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2392-2396 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical processes in modulation spectroscopy of single modulation doped heterojunctions and δ-doped structures were discussed. Different spectral line shapes due to the modulation of electron subband filling and band renormalization induced Stark effect (or quantum confined Franz–Keldysh effect) [Miller et al., Phys. Rev. B 32, 1043 (1985)] were obtained based on self-consistent electronic structure and corresponding wave function calculations.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4259-4261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting TlSr2(Ca,Cr)Cu2O7 thin films with zero resistance temperature Tc up to 102 K and critical current density Jc as high as 106 A/cm2 at 77.7 K have been successfully prepared via laser ablation and thallium diffusion. Prolonged low temperature annealing in air was used for film processing. X-ray diffraction patterns indicated that the films were highly oriented 1212 phase with c axes normal to the LaAlO3(100) or MgO(100) substrates.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 311-312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contact properties of Pd/Ti bilayer to heavily doped n+-polycrystalline silicon, prepared by electron beam evaporation, were studied by using both electrical measurements and Rutherford backscattering spectroscopy. The electrical behavior of the contacts at different sintering conditions is explained by the corresponding chemical composition changes at the metal/silicon interface during the sintering process.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8298-8303 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance line shapes of various semiconductor microstructures were discussed in this paper. Formulas suitable for application in low-dimensional structures were given and used to analyze experimental results from various semiconductor microstructures including GaAs nipi structures, GaAs/AlGaAs multiple quantum wells, InGaAs/GaAs strained-layer superlattices, and
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2530-2532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of erbium implants in a silicon-on-insulator structure were studied by photoluminescence and electrical activation measurements. The results indicate that a correlation exists between the luminescence energy or the lattice configuration and the electrical activation of the erbium in the implanted materials. Meanwhile, this work suggests a new way to enhance the luminescence efficiency of the erbium implanted materials.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2054-2057 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy contributions in epitaxial Fe/MnPd bilayers were analyzed in this study. It was found that due to ferromagnetic–antiferromagnetic interfacial exchange coupling, large uniaxial and cubic anisotropy contributions are also induced, in addition to the unidirectional anisotropy. These contributions play an essential role in the magnetization reversal process of the system, in which unusual reversal processes were found upon some fields orientations. © 2000 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6845-6847 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TbCo/Si multilayers prepared by the rf magnetron sputtering system with various Si thickness have been investigated. X-ray diffraction, magnetic measurement and Kerr rotation have been performed. No antiferromagnetic coupling was found for the system. With the thickness of Si layer tSi increasing, the perpendicular anisotropy constant Ku, and the saturation magnetization Ms decreased rapidly. It was assumed that Co2Si and Tb had been formed in the interfacial zone between TbCo and Si layers due to the interlayer diffusion. The decreasing of Ms is attributed to the decreasing of the effective thickness of magnetic layer. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6379-6383 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption fine structures (XAFS) and electron energy loss spectroscopy (EELS) at the Si L3,2 edge have been used to investigate a series of Si nanowires (as-prepared and HF refreshed). X-ray excited optical luminescence (XEOL) was also used to study the optical properties of these Si nanowires. Although no noticeable edge-jump blueshift (widened band gap) is observed in XAFS, a noticeable change in the edge jump (a less steep rise and the blurring of spectral features) is observed, indicating considerable degradation in the long-range order and size effects. However, EELS with a nanobeam exhibits a threshold blueshift and parabolic behavior for some selected wires indicating that there are grains smaller than the nominal diameter in these nanowires. Thus, XAFS probes the average of a distribution of wires of various sizes of which the majority is too large to exhibit detectable quantum confinement behavior (blueshift) observed and inferred in EELS and XEOL. The results and their implications are discussed. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7062-7064 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent studies found that the (Pt/Co/Pt) trilayers can be used as a unit in combination with nonmagnetic or magnetic layer, X (X=Pd, Ag, Cu, and Ni), to enhance the perpendicular magnetic anisotropy of the films, reduce the Curie temperature, and alter the magneto-optical properties. The effects of intercalating Cr into Pd/Co multilayers on the magnetic and magneto-optical properties are studied in this article. The perpendicular magnetic anisotropy Ku and the coercivity Hc of the system decrease rapidly with increasing the Cr thickness (XCr) up to 0.4 nm, and change slightly when Cr thickness further increases. The dependence of the coercivity Hc on the Cr thickness, which obeys the law: Hc (XCr)=XCr−2.66, indicates that the magnetization reversal is controlled by domain wall moving, mainly due to the interface roughness. Large decrease of the Kerr rotation θk of the Pd/Cr/Co multilayers compared with pure Pd/Co multilayers is also found in the wavelength ranging from 200 to 800 nm. As it is well known, the large anisotropy and Kerr rotation in Pd/Co system are mainly caused by the polarization of Pd atoms due to nearby Co atoms. As the intercalating of Cr layer between Pd and Co layer, the average polarization of Pd atoms will be reduced largely. As a matter of fact, the Cr atoms can also be polarized by nearby Co atoms, which, however, seems to take a minor effect on the anisotropy and Kerr rotation of the system. © 2001 American Institute of Physics.
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