ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Publication Date: 2018
    Description: Abstract Many of the processes that govern the viability of animal populations vary spatially, yet population viability analyses (PVAs) that account explicitly for spatial variation are rare. We develop a PVA model that incorporates autocorrelation into the analysis of local demographic information to produce spatially explicit estimates of demography and viability at relatively fine spatial scales across a large spatial extent. We use a hierarchical, spatial, autoregressive model for capture–recapture data from multiple locations to obtain spatially explicit estimates of adult survival (ϕad), juvenile survival (ϕjuv), and juvenile‐to‐adult transition rates (ψ), and a spatial autoregressive model for recruitment data from multiple locations to obtain spatially explicit estimates of recruitment (R). We combine local estimates of demographic rates in stage‐structured population models to estimate the rate of population change (λ), then use estimates of λ (and its uncertainty) to forecast changes in local abundance and produce spatially explicit estimates of viability (probability of extirpation, Pex). We apply the model to demographic data for the Sonoran desert tortoise (Gopherus morafkai) collected across its geographic range in Arizona. There was modest spatial variation in λ^ (0.94–1.03), which reflected spatial variation in ϕ^ad (0.85–0.95), ϕ^juv (0.70–0.89), and ψ^ (0.07–0.13). Recruitment data were too sparse for spatially explicit estimates; therefore, we used a range‐wide estimate (R^ = 0.32 1‐yr‐old females per female per year). Spatial patterns in demographic rates were complex, but ϕ^ad, ϕ^juv, and λ^ tended to be lower and ψ^ higher in the northwestern portion of the range. Spatial patterns in Pex varied with local abundance. For local abundances 〉500, Pex was near zero (〈0.05) across most of the range after 100 yr; as abundances decreased, however, Pex approached one in the northwestern portion of the range and remained low elsewhere. When local abundances were 〈50, western and southern populations were vulnerable (Pex 〉 0.25). This approach to PVA offers the potential to reveal spatial patterns in demography and viability that can inform conservation and management at multiple spatial scales, provide insight into scale‐related investigations in population ecology, and improve basic ecological knowledge of landscape‐level phenomena.
    Print ISSN: 1051-0761
    Electronic ISSN: 1939-5582
    Topics: Biology
    Published by Wiley on behalf of The Ecological Society of America (ESA).
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Publication Date: 2015-04-22
    Description: A capture cross section value is often assigned to Si–SiO 2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement approach and does not provide any meaningful insight into the physics involved. We argue that capture cross section is neither a physical property of interface defects nor is there any need to assign capture cross section values.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Publication Date: 2019
    Description: The Bulletin of the Ecological Society of America, Volume 100, Issue 1, January 2019.
    Print ISSN: 0012-9623
    Electronic ISSN: 2327-6096
    Topics: Biology , Energy, Environment Protection, Nuclear Power Engineering
    Published by Wiley on behalf of The Ecological Society of America (ESA).
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5021-5031 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage (I–V) characteristics in the ballistic limit of metal-oxide tunnel transistors are calculated as a function of temperature, potential barrier height, gate insulator thickness, aspect ratio, and oxide-channel shape. The saturation (‘knee') point and three modes of current transport across the device are discussed. For a given aspect ratio, the output impedance improves with increase in tunnel-oxide width, accompanied by slight decrease of gate transconductance. The net result is a significant improvement in the transistor gain. The gate transconductance improves with decrease in gate-insulator thickness, while approximately maintaining the output impedance. The net result is also a significant improvement in the transistor gain. Thus for a given aspect ratio, further device optimization to increase the transistor gain can be carried out by either increasing the tunnel oxide width or decreasing the gate insulator thickness. In practice, one preferably does both. A numerical study of the device performance of tapered-oxide devices is undertaken. We find that uniform-oxide channel design is generally superior to tapered-oxide channel designs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 117-119 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on a new type of extremely quiet and sensitive GaAs/AlGaAs photodetector. The photoresponse of the device is controlled by a hole trap in a tunnel barrier. Capture of a single photoinjected hole by the trap gates the device and produces an easily measured current pulse which can be counted by a conventional pulse-counting apparatus. There is only one detectable trap in a photoactive area of (approximately-equal-to)400 μm2. However, due to electric field channeling effects the trap collects photoinjected holes with a 1% efficiency in the active region. The absence of measurable dark counts in a 25 h period at 77 K establishes a minimum detectable photon flux 〈0.001 photons/s at 8200 A(ring).
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1133-1139 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design criteria for large transconductance/high output impedance or high-gain operation of metal-oxide tunneling transistors is given. The dependence of the gate control on the aspect ratio of thickness to width of the tunneling oxide is investigated by computer simulation. This device structure can only operate similar to conventional semiconductor transistors for aspect ratio considerably less than one. It ceases to function as a transistor for larger aspect ratio due to insufficient penetration of the gate control field into the tunneling oxide. To demonstrate this, the current–voltage characteristics are computed for aspect ratios equal to 7/30, 1, 21/10, and the different tunneling-current behaviors compared with our experimental results on Ti/TiOx/Ti and Nb/NbOx/Nb tunnel transistors.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2124-2126 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient band-gap electroluminescence has been observed in n+-n−-n+ single-barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field dependence of the impact ionization rate is determined. Comparisons to theory are made.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1378-1382 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage pulsed modification of surfaces in air with a scanning tunneling microscope has been studied with a view to understanding the physical processes involved. Incremented negative pulses have been applied to a tungsten tip to determine the threshold for feature writing on gold. The primary event observed with virgin tips is pit formation, which is interpreted as due to the transfer of gold cations from sample to tip. Subsequent pulsing establishes a threshold for a secondary process in which hillocks form on the gold surface and which are thought to be the result of gold anion retransfer from tip to sample. The thresholds are 4.16 and 3.92 V, respectively, for the two processes. For one particular tip, which gave rise to a Y-shaped pit, a three-dimensional profile was subsequently obtained by crashing it at a remote site on the surface and imaging the crater formed. The geometrical parameters of the tip, so elaborated, allowed a model of the electrostatic potential between tip and sample during pulsing to be numerically evaluated by solution of Laplace's equation and the field pattern over the surface to be determined. For the blunt pyramid involved, there is substantial anisotropy though modest field reduction at positions some nm from the projection of the tip on the surface. It is then a straightforward matter to understand the Y shape of the pit formed on the surface by the initial pulse. Field evaporation is thereby confirmed as the operative process. Reference experiments using gold tips showed no threshold difference between primary and secondary modification, a result consistent with the field evaporation mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1388-1390 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of nanometer-scale side-gated silicon field effect transistors using an atomic force microscope is reported. The probe tip was used to define nanometer-scale source, gate, and drain patterns by the local anodic oxidation of a passivated silicon (100) surface. These thin oxide patterns were used as etch masks for selective etching of the silicon to form the finished devices. Devices with critical features as small as 30 nm have been fabricated with this technique. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1932-1934 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for fabricating Si nanostructures with an air-operated atomic force microscope (AFM) is presented. An electrically conducting AFM tip is used to oxidize regions of size 10–30 nm of a H-passivated Si (100) surface at write speeds up to 1 mm/s. This oxide serves as an effective mask for pattern transfer into the substrate by selective liquid etching. The initial oxide growth rate depends exponentially on the applied voltage which produces an effective "tip sharpening'' that allows small features to be produced by a relatively large diameter tip.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...