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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4282-4285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of CoSi2 on (111)Si inside two-dimensional and linear oxide openings by rapid thermal annealing has been investigated by transmission electron microscopy. Both annealing temperature and time were found to be critical in obtaining 100% epitaxy. The size of oxide openings and annealing temperature were found to exert strong influences on the morphology of epitaxial CoSi2 on silicon. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. The change in morphology of epitaxial CoSi2 with the size of oxide openings in the present study indicated that interfacial energy and/or stress, in addition to the surface energy, are important in determining the morphology of epitaxial CoSi2 on (111)Si.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 171-188 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hygrothermal stresses in a solid with a boundary condition of constant surface stress have been investigated. Three simple geometries: thin slab, sphere, and cylinder, have been considered. The effect of geometry on temperature distribution and moisture absorption inside the solid from small to large follows the sequence: thin slab, cylinder, and sphere. If the temperature on the surface is a function of time whereas the moisture on the surface remains constant, the location of plastic deformation appears in the interior region during the coupled transfer process. On the other hand, when the moisture absorption is a function of time whereas the temperature is kept constant, the plastic deformation always occurs on the surface if possible. The maximum shear stress (σz−σr)/2 of cylinder is similar to the maximum shear stress σyy/2 of thin slab, and the maximum shear stress (σr−σt)/2 of sphere is similar to the maximum shear stress (σr−σθ)/2 of cylinder.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2239-2248 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical stresses in a composite circular cylinder have been investigated. The mass transfer follows the diffusion equation which was solved using the Laplace transformation technique. Both diffusion processes of constant average concentration and constant surface concentration are considered. The stresses arising from the mass transfer are derived. Two situations are considered: one is plane strain and the other is zero axial force. The largest maximum shear stress occurs at the position near the surface in the outer medium. The positions having the largest maximum shear stress are most probable to have plastic deformation. The outer medium cannot avoid plastic deformation during the mass transfer at constant average concentration.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7492-7495 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of a highly textured bulk YBa2Cu3 (123) superconductor, with the high-transport Jc (≥ (R18)3.7×104 A/cm2 at 77 K) and flux jumps (T〈15 K), were characterized by x-ray diffraction, polarized optical microscopy, scanning electron microscopy, and scanning transmission electron microscopy. It was found that the grains of the 123 superconductor are preferentially oriented along the a-b plane of the 123 phase. The Y2BaCuO5 and CuO particles are dispersed uniformly in the 123 matrix, and the highly dense twins run through the matrix everywhere. Some irregular-shaped BaCuO2-CuO mixtures were observed at the 123 grain boundaries. The aligned 123 crystals and microstructural defects in the 123 matrix are considered to be responsible for the high-Jc value and flux jumps.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2731-2733 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in situ epitaxial growth of the Y-Ba-Cu-O films on MgO (001) was carried out by 40.68- MHz rf magnetron sputtering with an on-axis single target. It appeared that the rf discharge strongly affected film composition, crystallinity, superconductivity, and reproducibility. Highly orientated superconducting films with the c-axis perpendicular to the substrate surfaces and having zero resistance transition temperature of 78.2 K were obtained without a post-annealing.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3211-3219 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion-induced stresses in a long bar of square cross section have been investigated. Two mass transfers consisting of constant average concentration and constant surface concentration were considered. The concentration distribution was obtained in an analytic form. The displacement and stress fields were obtained numerically using a Jacobi iterative method. The maximum stress is located at the corner for constant average concentration and at the midedge for constant surface concentration. A comparison of stresses built up in the bar of a square cross section and in a thin slab was made.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6462-6469 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and properties of Cu films containing insoluble Mo in as-deposited and annealed conditions have been studied. Using magnetron sputtering, Cu films with Mo concentrations up to 25 at. % have been deposited. The Cu-Mo films consist of nonequilibrium supersaturated solid solutions of Mo in Cu and have nanocrystalline microstructures. Upon heating, most of the films studied undergo three major transition events: recovery, crystallite growth and coalescence, and grain growth. Recovery occurs at ∼220–250 °C due to the release of strain energies stored during deposition, while the growth and coalescence of crystallites at ∼490 °C are likely driven by the crystallite-boundary reduction. Upon further annealing at above ∼670 °C, the microstructure alters considerably in most of the films, resulting in extensive growth of crystallites and grains. Rather high strain energies are thought to cause the precipitation of Cu particles in the molybdenum-rich Cu-Mo films (e.g., Cu-25 at. % Mo) during annealing at a temperature as low as 200 °C. The fine structure observed in the 800 °C-annealed Cu-25 at. % Mo film suggests that the extensive crystallite/grain growth is effectively impeded by the presence of molybdenum, signifying a good property of thermal stability. The film's resistivity and hardness properties correlate well with the microstructure and are governed by the impurity effect of molybdenum. Low-molybdenum Cu-Mo films yield relatively low resistivity, and this is attributable to the improved film microstructure. Hardness results indicate that the strengthening of the films is mainly due to the fine structure and presence of molybdenum. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2699-2702 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti–SiO2–Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence–conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron–electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6086-6088 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallization behavior of sputtered BaTiO3 and Nb-doped BaTiO3 thin films has been characterized by means of the differential scanning calorimetry (DSC). The crystallization of as-deposited amorphous structure to the equilibrium crystalline structure is confirmed as an irreversible, exothermic, first-order transition. Our in situ DSC result confirming the metastable nature of sputtered films is in agreement with that of a conventional, ex situ x-ray diffraction result. At a heating rate of 20 °C/min, the crystallization peak temperature of BaTiO3 film is found to be 467.6 °C and to increase with the addition of Nb. Activation energies for crystallization are determined by Kissinger's method to be 139.2, 99.3, and 81.0 kJ/mol for pure BaTiO3, BaTiO3–2 at. % Nb, and BaTiO3–3 at. % Nb films, respectively. The decrease in activation energy suggests the addition of Nb tends to assist the thermal-activated crystallization process in sputtered films. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3608-3610 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the capacitance–voltage (CV) characteristics of semiconductor metal-insulator- semiconductor (MIS) heterostructures and the nonparabolic characteristics of narrow-gap semiconductors (NGSs), a surface potential model has been developed to derive subband structures of two-dimensional electron gas systems in an inversion layer of NGS MIS heterostructures. CV measurement was also performed on a p-type InSb MIS heterostructure, and two onsets of electron filling more than one subband were observed. Subband structures were also obtained using the presented potential model. © 1996 American Institute of Physics.
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