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  • Springer  (43)
  • American Institute of Physics (AIP)  (25)
  • Springer Nature  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Applications of intense pulsed ion beam to materials sciencef| (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 1730-1737 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In addition to being initially developed as an energy driver for an inertial confinement fusion, an intense, pulsed, light-ion beam (LIB) has been found to be applied to materials science. If a LIB is used to irradiate targets, a high-density "ablation'' plasma is produced near the surface since the range of the LIB in materials is very short. Since the first demonstration of quick preparation of thin films of ZnS by an intense, pulsed, ion-beam evaporation (IBE) using the LIB-produced ablation plasma, various thin films have been successfully prepared, such as of ZnS:Mn, YBaCuO, BaTiO3, cubic BN, SiC, ZrO2, ITO, B, C, and apatite. Some of these data will be presented in this paper, with its analytic solution derived from a one-dimensional, hydrodynamic, adiabatic expansion model for the IBE. The temperature will be deduced using ion-flux signals measured by a biased ion collector. Reasonable agreement is obtained between the experiment and the simulation. High-energy LIB implantation to make chemical compounds and the associated surface modification are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870677
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  • 2
    Electronic Resource
    Electronic Resource
    Results of a new "OCTOPUS'' ECR ion source at 6.4 GHz : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 265-266 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The first OCTOPUS electron cyclstron resonance (ECR) multicharged heavy ion source was built in 1985 at the Centre de Recherches du Cyclotron of the University of Louvain (Belgium). This first source used an ECR frequency of 14.3 GHz in the injector stage and 8.5 GHz in the main confinement stage. A new OCTOPUS source has now been built for a new cyclotron to be installed at the Japan Atomic Energy Research Institute (JAERI). The design of this new OCTOPUS source is identical to the first OCTOPUS source, but uses an ECR frequency of 6.4 GHz in the main confinement stage. The experimental results are described, and a comparison is made between the two sources. However, the available data does not allow any clear conclusion to be drawn on frequency scaling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141315
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Sm3(Fe, V)29NX (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4675-4677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and magnetic properties of Sm3(Fe, V)29NX compounds were investigated. It was found that the novel nitride, Sm3(Fe, V)29N2, is more stable than Sm3(Fe, V)29N4 in the atmosphere with low nitrogen pressure. The x-ray and electron diffraction studies show that the nitrides retain the same crystal structure as Sm3(Fe, V)29. The lattice parameters of Sm3(Fe, V)29N2 are a=1.084 nm, b=0.870 nm, c=0.985 nm, and β=97.06°. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370444
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  • 4
    Electronic Resource
    Electronic Resource
    Detection of shear wave in ultrasonic range by using a laser Doppler vibrometer (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2572-2573 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A laser Doppler vibrometer is used to measure shear waves propagating through solids in the ultrasonic frequency range. The laser Doppler vibrometer detects translational motion of small spherical lenses mounted on a solid surface. Stacking of wave-form signals increases the signal-to-noise ratio. Wave motion on a solid surface can be obtained from the surface vibrations measured at different incident angles of a laser beam. The observed longitudinal and shear wave amplitudes from a thickness-dilation-mode transducer agreed fairly well with the calculated amplitudes modeled by a piston force source. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148961
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  • 5
    Electronic Resource
    Electronic Resource
    Heat capacity of ternary compounds RNiGe(R=Gd, Dy, Er, and Y) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7410-7412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heat capacity of the ternary compounds RNiGe(R=Er, Dy, Gd, and Y) was studied in the temperature range between 2 and 40 K. From the heat capacity curves, Néel temperatures are found to be 3.3, 7.4, and 10.7 K for ErNiGe, DyNiGe, and GdNiGe, respectively. The heat capacity of YNiGe was well fitted with an average Debye temperature of 272 K in the temperature range between 2 and 40 K. The changes of magnetic entropy indicate a strong influence of the crystal field on the Er+3 and Dy+3 ion in ErNiGe and DyNiGe compounds. These results suggest the possibility of using these compounds as magnetic regenerator materials near the temperature of 4.2 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360395
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth study of Bi2(Sr,Ca)3Cu2Ox films on cleaved MgO substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of Bi2(Sr0.6Ca0.4)3Cu2Ox films by ion beam sputtering on cleaved MgO substrates was studied. The crystallographic structures were analyzed by in situ reflection high-energy electron diffraction, a four-circle x-ray diffractometer, and a scanning electron microscope. While the epitaxial films on polished MgO substrates commonly showed the fourfold symmetry, epitaxial films having twofold symmetry were grown on cleaved MgO substrates and the films contained two types of equivalently misoriented domains. The epitaxial relationship between these domains and cleaved MgO substrates was such that the b axis of each domain deviated approximately ±13° from [010]MgO where the cleavage steps ran along [100]MgO. The step edges seemed to play an important role in the occurrence of the twofold epitaxial relationship, where the incommensurate modulation tended to align its direction so as to avoid the step edges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104381
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of oxygen plasma annealing on superconducting properties of Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 575-577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103302
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  • 8
    Electronic Resource
    Electronic Resource
    Radiation damage effects in ion-implanted Bi-Sr-Ca-Cu-O superconducting thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transition temperature (Tc) control and annealing effects of Bi2.0Sr1.4Ca1.8Cu2.2Oy superconducting thin films implanted by 200 keV Ne+ have been investigated. Tc end points for 0.4-μm-thick Bi2.0Sr1.4Ca1.8Cu2.2Oy films for 0, 1×1012, and 1×1013 ions/cm2 doses are 78, 76, and 54 K, respectively. The ion dose, to achieve a nonsuperconductor for Bi2.0Sr1.4Ca1.8Cu2.2Oy films, is two or more orders of magnitude lower than that for YBa2Cu3O7−x films. The c-lattice constant increases were observed for the implanted films. Moreover, it was confirmed that the superconducting characteristics for the implanted films are recovered by annealing in O2 atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100499
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Sr-Ca-Cu-O thin film by coevaporation and its thermal stability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film with a high Tc single phase was prepared on a (100)MgO substrate at a substrate temperature of about 620 °C by coevaporation of Bi2O3, Sr, Ca, and Cu metal. The resistive superconducting transition with onset Tc of 80 K was observed for this film. By post-deposition annealing at 850 °C, the high Tc phase was transformed into a low Tc phase, while films annealed at a higher temperature such as 890 °C maintained the high Tc phase. These results indicated that the high Tc phase can exist only at the high-temperature region (∼890 °C) while the stable phase existing at the low-temperature region (∼850 °C) is the low Tc phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101460
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of Y-Ba-Cu-O were obtained on a Si substrate, using an epitaxial intermediate layer consisting of BaTiO3(or SrTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on the Si(100) substrate by chemical vapor deposition. Then, SrTiO3 or BaTiO3 was also epitaxially grown on the MgAl2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were prepared on BaTiO3(SrTiO3)/MgAl2O4/Si substrates by rf magnetron sputtering. Preparation of an Y-Ba-Cu-O film directly on MgAl2O4/Si was also studied, but only a randomly oriented polycrystalline film has been obtained so far. Resistive superconducting transitions with zero resistance at 65 K on SrTiO3/MgAl2O4/Si and at 70 K on BaTiO3/MgAl2O4/Si were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100488
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