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  • 11
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition InGaAs p-i-n photodiodes with extremely low dark current (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 733-735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar, Zn-diffused InP/InGaAs p-i-n photodiodes, which have been fabricated from material grown by metalorganic chemical vapor deposition, have been shown to exhibit extremely low dark current. The typical dark current measured for 100-μm-diam devices was 10 pA at −10 V bias, with some devices having values as low as 3 pA (3.8×10−8 A/cm2). Excellent uniformity of the dark current was found. A low capacitance of 0.45 pF, a responsivity at 1.3 μm of 0.90 A/W, and rise/fall times of less than 150 ps were measured at −5 V bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99363
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  • 12
    Electronic Resource
    Electronic Resource
    Zinc-enhanced beryllium redistribution in GaAs/GaAlAs grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1219-1221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effect of zinc diffusion into beryllium- and silicon-doped GaAs/Ga0.7Al0.3As structures has been carried out. The beryllium dopant was found to diffuse very rapidly as a result of the presence of diffusing zinc, while the silicon remained unaffected. A mechanism is proposed whereby competition for the gallium sites causes the beryllium to move interstitially wherever zinc is present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99163
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  • 13
    Electronic Resource
    Electronic Resource
    A technique for in situ calibration of an x-ray streak camera in the nanosecond regime using a high density Z-pinch (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1711-1714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for calibrating an x-ray streak camera in situ has been developed. It has been applied to an x-ray streak camera installed on a collapsing gas shell Z-pinch. The calibration was done by simultaneously measuring the emitted x-rays using a pinhole camera, an InP:Fe photoconductive detector, and the streak camera. The spatial dimension of the streak image was calibrated by integrating the film density over time and fitting the resulting data to the corresponding information taken from an x-ray pinhole image. The temporal calibration was obtained by similarly fitting the film density from the x-ray streak image as a function of time integrated over the appropriate part of the spatial dimension with the signal from an InP:Fe photoconductive detector. By using this technique we have found a spatial magnification of the streak camera system consistent with the results derived from the geometrical optics to within 10%. A temporal dispersion of 2.5±0.5 ns/mm was obtained, which is in agreement with the nominal speed of 2.5 ns/mm. This technique also yielded an absolute intensity calibration of the streak camera.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336017
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  • 14
    Electronic Resource
    Electronic Resource
    Analysis of the lumped τ2 effect in relaxation calorimetry (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 273-277 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In thermal relaxation calorimetry, the heat capacity can be calculated from the time constant τ1=Cp/Kb of the exponential decay of the cooling curve. If the thermal bond between the sample and sample holder is poor, the cooling curve is described by T−T0=A1 exp(−t/τ1)+A2 exp(−t/τ2). Analysis shows that the heat capacity of the sample plus addenda is Cp=Kb (A1τ1+A2τ2)/(A1+A2). For most cases, a good approximation is given by Cp=Kb (A1τ1/ΔT), which does not require the measurement of A2 or τ2. An expression is presented for calculating the conductance of the thermal bond of the sample to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138343
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  • 15
    Electronic Resource
    Electronic Resource
    Ultrafast x-ray streak camera for use in ultrashort laser-produced plasma research : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 719-721 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In recent years there has been growing interest in energetic ((approximately-greater-than)100 eV), temporally short (〈10 ps) x rays produced by ultrashort laser-produced plasmas. The detection and temporal dispersion of the x rays using x-ray streak cameras has been limited to a resolution of 2 ps, primarily due to the transit time dispersion of the electrons between the photocathode and the acceleration grid. The transit time spread of the electrons traveling from the photocathode to the acceleration grid is inversely proportional to the accelerating field. By increasing the field by a factor of 7, we have minimized the effects of transit time dispersion in the photocathode/accelerating grid region and produce an x-ray streak camera with subpicosecond temporal resolution (≈900 fs). The streak camera has been calibrated using a Michelson interferometer and 100 fs, 400 nm laser light. The characteristics of the streak camera, along with the most recent x-ray streak data will be presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146269
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  • 16
    Electronic Resource
    Electronic Resource
    Application of InP:Fe photoconductors as a fast and sensitive soft x-ray detector and bolometer (abstract) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 846-846 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recently we have demonstrated that InP:Fe photoconductors are fast (FWHM∼150 ps), sensitive (2.7×10−3 A/W), and flat response soft x-ray detectors using synchrotron radiation from the Stanford Synchrotron Radiation Laboratory.1 We have applied these to the measurement of the radiation emitted by a collapsing annular gas (argon) puff z-pinch plasma. The detector was used in two modes of operation: (1) a filtered soft x-ray detector as a pinch diagnostic and (2) a fast unfiltered bolometer to measure the total radiated power as a function of time. We will compare the performance of the photoconductors to other common fast x-ray detectors and bolometers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138064
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  • 17
    Electronic Resource
    Electronic Resource
    Infrared emission as a diagnostic for a collapsing gas shell Z-pinch (abstract) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 937-937 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The shape and absolute intensity of the infrared emission as a function of wavelength can yield information about the conditions in a plasma. This diagnostic technique has been reviewed by Zwicker,1 who gives several examples of its application to low density plasmas. We have applied this diagnostic, for the first time, to a high density (∼1020 cm−3) plasma, a collapsing gas (argon) shell Z pinch. Using a fast Au doped Ge detector and infrared notch filters we have scanned the emitted spectrum from ∼0.5 to 8.2 μm with l-ns time resolution. This spectral range encompasses the optically thin-to-thick transition as well as the plasma frequency at the time of peak compression. We will present this data along with an interpretation which allows us to follow the development of the pinched column during the thermalization stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138049
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  • 18
    Electronic Resource
    Electronic Resource
    Fractional differential forms (2001)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 42 (2001), S. 2203-2212 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A generalization of exterior calculus is considered by allowing the partial derivatives in the exterior derivative to assume fractional orders. That is, a fractional exterior derivative is defined. This is found to generate new vector spaces of finite and infinite dimension, fractional differential form spaces. The definitions of closed and exact forms are extended to the new fractional form spaces with closure and integrability conditions worked out for a special case. Coordinate transformation rules are also computed. The transformation rules are different from those of the standard exterior calculus due to the properties of the fractional derivative. The metric for the fractional form spaces is given, based on the coordinate transformation rules. All results are found to reduce to those of standard exterior calculus when the order of the coordinate differentials is set to one. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364688
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  • 19
    Electronic Resource
    Electronic Resource
    High temperature operation of InGaAsP/InP heterostructure lasers and integrated back facet monitors fabricated by chemically assisted ion beam etching (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2486-2488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemically assisted ion beam etching (CAIBE) has been used to etch InGaAsP/InP ridge laser facets. Smooth, vertical facets 4 μm deep have been etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room temperature and high temperature (85 °C) L-I characteristics and device performance have been evaluated, as well as the performance of integrated back facet monitors. Output powers of 9.5 mW from the laser and a monitor current of 3.75 mA have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109327
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  • 20
    Electronic Resource
    Electronic Resource
    Influence of dose rate and temperature on the accumulation of Si-implantation damage in indium phosphide (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1670-1672 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of dose rate and temperature on the implantation damage accumulation in InP has been investigated. InP crystals were implanted at 80–323 K with 600 keV Si+ ions at a beam flux of 0.005–1.0 μA cm−2, and to total fluences of between 5×1012 and 2×1014 Si cm−2. The residual damage following implantation was analysed by the Rutherford backscattering/channeling technique. The results show that at 80 K, the influence of the beam flux on the accumulated displacement damage is small. However, at T≥295 K the displaced atom density, Nd, exhibits a power law dependence on J:Nd=αJn, with the value of n dependent on both the total ion dose and implant temperature. At 295 K and Si doses of 1–4×1013 cm−2, the value of n varies from 0.23 to 0.15.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108621
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