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Silicon carbide formation by annealing C60 films on silicon (1997)

Moro, L. ; Paul, A. ; Lorents, D. C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 6141-6146

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Silicon carbide films were grown on (100) silicon substrates by deposition of 200-nm-thick C60 films, followed by annealing. The predeposited C60 is progressively destroyed by annealing, and carbon reacts with silicon to produce SiC. The reaction starts at the interface and continues by diffusion of silicon through the already formed SiC. At the lower temperatures (700 °C), the reaction is localized at the interface. Diffusion of silicon and formation of stoichiometric SiC requires annealing at 800 °C for t≥100 min and at 900 °C for t≥25 min. The stoichiometric films are uniform with a grain size of 20–40 nm. A diffusion coefficient of silicon in SiC of 4×10−15 cm2/s at 900 °C was determined. Because the diffusion of silicon is faster through preferential paths in the SiC film, such as grain boundaries and other crystalline defects, pits and voids are produced in the silicon substrate when the C60 predeposited film covers larger areas. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.364395

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Resonant orbital evolution in the putative planetary system of PSR1257 + 12 (1992)

Malhotra, R. ; Black, D. ; Eck, A. ; [et al.]

[s.l.] : Nature Publishing Group

Nature 356 (1992), S. 583-585

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ISSN: 1476-4687

Source: Nature Archives 1869 - 2009

Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics

Notes: [Auszug] The masses of the objects orbiting the millisecond pulsar PSR1257 + 12 are reported to be 2.8M@/sin i and 3.4M@/sin i, where M© is the mass of the Earth and i is the inclination of the orbital plane to the plane of the sky. To test the reality of these planets, the simplest consideration is ...