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  • Springer Nature  (100)
  • Nature Publishing Group  (25)
  • American Institute of Physics (AIP)  (13)
  • 1
    Electronic Resource
    Electronic Resource
    Theory of feature broadening in direct-write optical lithography (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3316-3322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In direct-write optical lithography (DWOL), an intense, nearly-resonant standing light wave of wavelength λ is used to focus a collimated atomic beam. In this way, a grating structure is deposited on the substrate. We argue that during DWOL adatoms move primarily as a result of collisions with incident atoms. The resulting equation of motion for the film surface describes the way in which the features smooth and broaden as the film thickness increases. We find that as the film thickness grows large, the topography tends to a steady state form with amplitude proportional to λ4. No matter how well focused the incident atomic flux is, in the steady state the surface corrugations have a full-width-at-half-maximum that is greater than 45% of the peak-to-peak distance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289475
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  • 2
    Electronic Resource
    Electronic Resource
    Nonlinear optical spectroscopy of the Ag(111) surface in an electrolyte and in vacuum (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5535-5546 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper, we investigate the electronic structure of a metal surface in the presence of aqueous electrolyte and an applied potential by optical second harmonic generation (SHG). We have obtained the detailed wavelength dependence (λSH=300–350 nm) of the SH response from Ag(111) in both an aqueous electrolyte and in ultrahigh vacuum (UHV) and find that, when the Ag(111) electrode is biased at the potential of zero charge (PZC), the SH response can be strongly correlated with the SH response in UHV. For the surface in both environments, there is a sharp peak near 3.82 eV. Possible contributing factors to this peak are discussed. In the electrochemical environment, the effect of applied potential on the SH response at longer wavelengths (nonresonant regime) is consistent both with previous observations at fixed frequencies and predictions of the surface charge density (SCD) model. At resonant wavelengths, there is a dramatic deviation from behavior predicted by the SCD model, a result consistent with previous experiments at discrete wavelengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465946
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  • 3
    Electronic Resource
    Electronic Resource
    Rangefinder with fast multiple range capability (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3311-3316 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A rangefinder is described that uses the propagation time of a beam of infrared radiation to measure distances of up to 120 m with errors of less than 50 μm. The instrument is capable of measuring up to five different distances per second by directing an amplitude modulated infrared beam to a retroreflector located at the far end of each path. The instrument is being tested with the expectation that such a system could be used to make precise and rapid measurements on a large radio telescope. Such measurements would be used to adjust the shape of the telescope reflector surface to correct for thermal and gravitational deformations taking place during astronomical observations. It is possible that the measuring system could be extended to relate the positions of certain moving parts of the structure to a reference system fixed in the ground, thus opening the possibility of making corrections to the telescope pointing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142544
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  • 4
    Electronic Resource
    Electronic Resource
    Stability of a circular void in a passivated, current-carrying metal film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6840-6847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We perform a linear stability analysis of a preexisting circular void in a passivated current-carrying metal thin film. We introduce small perturbations to the shape of a circular void and study the time evolution of these perturbations in two cases. In the first case, we take only current crowding and surface electromigration into account and find that the void relaxes to a nontrivial steady state in which there are slitlike projections from an otherwise circular void. The relaxation time needed to approach this steady state is also calculated. We then include the effect of surface self-diffusion in our analysis and find that the steady state is a circular void drifting with constant speed. Our calculations indicate that a circular void whose radius is small compared to the line width is stable with respect to small perturbations of its shape in the presence of current crowding, surface electromigration, and surface self-diffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361429
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  • 5
    Electronic Resource
    Electronic Resource
    Mean-field theory of electromigration-induced void drift and coalescence in metal thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 756-761 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a mean-field theory for the drift and coalescence of voids in a thin, passivated, single-crystal metal film carrying an electrical current. In our model, each circular void drifts along the local electric field with a speed inversely proportional to its radius, and current crowding is taken into account. Our approach leads to a mean-field equation of motion which we integrate numerically. We find that the number of voids of area a per unit film area, n(a,t), follows the scaling form n(a,t)=t−2(a/t) for large times t. As a result, the mean void area grows linearly in time in the long-time regime. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362883
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  • 6
    Electronic Resource
    Electronic Resource
    Theory of high-temperature oxide decomposition at the SiO2/Si interface (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 545-548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultra-high vacuum decomposition of a thin oxide layer on a resistively heated silicon substrate proceeds by the formation and lateral growth of holes in the oxide layer. It is shown that the hole radii grow linearly with time on a uniformly heated substrate, in contrast to the experimental result R2∝t−t0. To account for the observed growth law, it is argued that defects in resistively heated wafers act as localized heat sources and so tend to nucleate holes. Under the assumption that the hole growth is reaction limited, we obtain the observed R2∝t−t0 behavior. A simple experimental test of the theory is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338255
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  • 7
    Electronic Resource
    Electronic Resource
    Origin of thickness oscillations in nucleated thin-film silicides (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3146-3149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory of the origin of thickness oscillations in nucleated metal silicide thin films is presented. It is shown that under certain conditions the uniformly growing state is unstable against small perturbations, and that the interface velocity oscillates periodically in time once the steady state is perturbed. These oscillations lead to the observed thickness and grain size modulations. A morphological instability can also occur, resulting in patterns of concentric rings with wavy perimeters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337727
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  • 8
    Electronic Resource
    Electronic Resource
    Theory of thin-film orientation by ion bombardment during deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4160-4164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the development of orientational order in thin films grown with off-normal incidence ion bombardment during deposition. The overall orientational order in our model results from the dependence of the sputtering yield on grain orientation. We demonstrate that the degree of orientational order at the surface of a thick film grows slowly with increasing ion flux until, at a critical value of the flux, it begins to rise more steeply and then saturates at its maximum value. The time needed to approach the thick-film limit displays a peak as the ion flux is varied. We compare our work with the experimental results of Yu et al. [Appl. Phys. Lett. 47, 932 (1985)] and use our results to show how the deposition technique can be optimized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337499
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  • 9
    Electronic Resource
    Electronic Resource
    Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2546-2548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering by local vibrational modes of carbon-hydrogen pairs is reported for heavily carbon-doped epitaxial GaAs layers. Scattering by the longitudinal carbon mode of these pairs at 452 cm−1 shows a strong resonant enhancement for incident photon energies approaching the E1 band-gap energy of GaAs ((approximately-equal-to)3 eV). A possible mechanism for this resonance behavior is discussed in terms of the displacement of the carbon atom from its normal arsenic lattice site accompanied by a lengthening and weakening of the carbon-gallium bonds when carbon-hydrogen pairs form. The present findings demonstrate that resonant Raman scattering is an attractive tool for the detection of carbon-hydrogen pair formation in thin carbon-doped epitaxial GaAs layers grown from source materials containing hydrogen. The detection limit is estimated to be in the low 1018 cm−3 range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106908
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  • 10
    Electronic Resource
    Electronic Resource
    Theory of improved resolution in depth profiling with sample rotation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3722-3724 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We advance a theory that explains why sample rotation during depth profiling leads to a dramatic improvement in depth resolution. When the sample is rotated, the smoothing effects of viscous flow and surface self-diffusion can prevail over the roughening effect of the curvature-dependent sputter yield and generate a smooth surface. If the sample is not rotated initially and the depth resolution declines, we predict that subsequent rotation leads to improved resolution. This phenomenon has already been observed experimentally. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115985
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