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  • Oxford University Press  (12)
  • American Institute of Physics (AIP)  (10)
  • International Union of Crystallography  (3)
  • 1
    Publication Date: 2014-02-20
    Description: Recent reports have associated NCF2 , encoding a core component of the multi-protein NADPH oxidase (NADPHO), with systemic lupus erythematosus (SLE) susceptibility in individuals of European ancestry. To identify ethnicity-specific and -robust variants within NCF2 , we assessed 145 SNPs in and around the NCF2 gene in 5325 cases and 21 866 controls of European-American (EA), African-American (AA), Hispanic (HS) and Korean (KR) ancestry. Subsequent imputation, conditional, haplotype and bioinformatic analyses identified seven potentially functional SLE-predisposing variants. Association with non-synonymous rs17849502, previously reported in EA, was detected in EA, HS and AA ( P EA = 1.01 x 10 –54 , P HS = 3.68 x 10 –10 , P AA = 0.03); synonymous rs17849501 was similarly significant. These SNPs were monomorphic in KR. Novel associations were detected with coding variants at rs35937854 in AA ( P AA = 1.49 x 10 –9 ), and rs13306575 in HS and KR ( P HS = 7.04 x 10 –7 , P KR = 3.30 x 10 –3 ). In KR, a 3-SNP haplotype was significantly associated ( P = 4.20 x 10 –7 ), implying that SLE predisposing variants were tagged. Significant SNP–SNP interaction ( P = 0.02) was detected between rs13306575 and rs17849502 in HS, and a dramatically increased risk (OR = 6.55) with a risk allele at each locus. Molecular modeling predicts that these non-synonymous mutations could disrupt NADPHO complex assembly. The risk allele of rs17849501, located in a conserved transcriptional regulatory region, increased reporter gene activity, suggesting in vivo enhancer function. Our results not only establish allelic heterogeneity within NCF2 associated with SLE, but also emphasize the utility of multi-ethnic cohorts to identify predisposing variants explaining additional phenotypic variance (‘missing heritability’) of complex diseases like SLE.
    Print ISSN: 0964-6906
    Electronic ISSN: 1460-2083
    Topics: Biology , Medicine
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  • 2
    Publication Date: 2013-04-02
    Description: An artificial small RNA (afsRNA) scaffold was designed from an Escherichia coli sRNA, SibC. Using the lacZ reporter system, the gene silencing effects of afsRNAs were examined to explore the sRNA-mediated gene-silencing mechanisms in E. coli . Substitution of the original target recognition sequence with a new sequence recognizing lacZ mRNA led to effective reduction of lacZ gene expression. Single-strandedness of the target recognition sequences in the scaffold was essential for effective gene silencing. The target recognition sequence was shortened to 10 nt without significant loss of gene silencing, although this minimal length was limited to a specific target mRNA sequence. In cases where afsRNAs had mismatched (forming internal loops) or unmatched (forming bulges) regions in the middle of the target recognition sequence, internal loop-forming afsRNAs were more effective in gene silencing than those that formed bulges. Unexpectedly, gene silencing by afsRNA was not decreased but increased on hfq disruption in E. coli , particularly when interactions between afsRNA and mRNA were weak, suggesting that Hfq is possibly involved in destabilization of the RNA–RNA duplex, rather than enhancement of base pairing.
    Print ISSN: 0305-1048
    Electronic ISSN: 1362-4962
    Topics: Biology
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  • 3
    Publication Date: 2012-07-22
    Description: Phosphorylation of the histone variant H2AX forms -H2AX that marks DNA double-strand break (DSB). Here, we generated the sequencing-based maps of H2AX and -H2AX positioning in resting and proliferating cells before and after ionizing irradiation. Genome-wide locations of possible endogenous and exogenous DSBs were identified based on -H2AX distribution in dividing cancer cells without irradiation and that in resting cells upon irradiation, respectively. -H2AX-enriched regions of endogenous origin in replicating cells included sub-telomeres and active transcription start sites, apparently reflecting replication- and transcription-mediated stress during rapid cell division. Surprisingly, H2AX itself, prior to phosphorylation, was specifically located at these endogenous hotspots. This phenomenon was only observed in dividing cancer cells but not in resting cells. Endogenous H2AX was concentrated on the transcription start site of actively transcribed genes but was irrelevant to pausing of RNA polymerase II (pol II), which precisely coincided with -H2AX of endogenous origin. -H2AX enrichment upon irradiation also coincided with actively transcribed regions, but unlike endogenous -H2AX, it extended into the gene body and was not specifically concentrated on the pausing site of pol II. Sub-telomeres were less responsive to external DNA damage than to endogenous stress. Our findings provide insight into DNA repair programs of cancer and may have implications for cancer therapy.
    Print ISSN: 0305-1048
    Electronic ISSN: 1362-4962
    Topics: Biology
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  • 4
    Publication Date: 2014-08-20
    Description: Marsupials exhibit great diversity in ecology and morphology. However, compared with their sister group, the placental mammals, our understanding of many aspects of marsupial evolution remains limited. We use 101 mitochondrial genomes and data from 26 nuclear loci to reconstruct a dated phylogeny including 97% of extant genera and 58% of modern marsupial species. This tree allows us to analyze the evolution of habitat preference and geographic distributions of marsupial species through time. We found a pattern of mesic-adapted lineages evolving to use more arid and open habitats, which is broadly consistent with regional climate and environmental change. However, contrary to the general trend, several lineages subsequently appear to have reverted from drier to more mesic habitats. Biogeographic reconstructions suggest that current views on the connectivity between Australia and New Guinea/Wallacea during the Miocene and Pliocene need to be revised. The antiquity of several endemic New Guinean clades strongly suggests a substantially older period of connection stretching back to the Middle Miocene and implies that New Guinea was colonized by multiple clades almost immediately after its principal formation.
    Print ISSN: 0737-4038
    Electronic ISSN: 1537-1719
    Topics: Biology
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  • 5
    Publication Date: 2015-12-09
    Description: The incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic ( c -) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal ( h -) to c -phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c -phase inside a chevron-shaped h -phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and ( 1 1 ¯ 01 ) facets at both edges. A stack of five, ∼3 nm-thick, In x Ga 1−x N/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c -phase region up to the QWs keeps extremely small misfit (∼0.002) to the fully relaxed h -GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. The In incorporation on a strained non-polar (001) of c -GaN is comparable with that on totally relaxed semi-polar ( 1 1 ¯ 01 ) of h -GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c -In x Ga 1−x N/GaN QWs on Si(001) in photoluminescence.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 5734-5745 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The time-dependent formulation of Raman scattering is used to derive simple expressions for fundamental and overtone intensities that depend on potential energy features in the Franck–Condon region and the homogeneous damping constant due to the bath modes. From the Raman excitation profiles, the dependence of the full width at half-maximum on the damping constant is calculated. The results are applied to the rich resonance Raman spectra and Raman excitation profiles of transition metal complexes, in particular, Cs3[Re2OCl10] and Cs4[W2OCl10], to determine the magnitude of the geometric changes occurring upon excitation of the molecule from the ground to the excited electronic state. For each compound, the multidimensional harmonic potential surface and damping constant derived for the excited electronic state are then used to simulate the observed Raman excitation profiles and resonance Raman spectrum.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5313-5323 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An accurate, back-of-the-envelope spectral moment method is described to obtain molecular parameters of excited state molecules and ions from vibrationally resolved absorption spectra. Since it is not an iterative procedure, the spectral moment method is clearly much faster than the least-squares Franck–Condon analysis for obtaining molecular parameters, and the procedure described here can even be implemented on a hand-held calculator. Some of the drawbacks of Franck–Condon analysis are overcome by the spectral moment method. Comparison of molecular parameters for a diverse range of excited state molecules and ions obtained by the spectral moment method versus Franck–Condon analysis or rotational spectroscopy reveal the high accuracy of the procedure here. Simulations of vibrationally resolved absorption spectra show that the spectral moment method with the Morse potential approximation gives an envelope that matches very well the observed spectra.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 893-900 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The field equations for axially symmetric gravitational fields in 4+K dimensions with K-dimensional toroidal compatification can be reduced to those of a generalized nonlinear sigma model. The dual symmetry of this model is considered first. Then the soliton transformations for these equations are derived using the method of Belinskii and Zakharov consequently generalizing their results to the higher-dimensional case. From the result of one-soliton transformation, a series of discrete symmetries generalizing the Neugebauer–Kramer transformation in the four-dimensional case are obtained. The basic properties of these new transformations are studied.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 901-904 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The solutions of vacuum Einstein equations in 4+K dimensions with 2+K commuting Killing vectors under the Abelian Kaluza–Klein ansatz are considered. This system admits Belinskii–Zakharov-type soliton transformations. The explicit formulas for general N-soliton transformations are obtained by iterating the formulas for one-soliton transformation.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3282-3288 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of InAs islands on a GaAs(001) substrate patterned with ∼50–200-nm diameter holes in an SiO2 mask overlayer providing selective GaAs nucleation areas is reported. The nanoscale pattern was generated in the SiO2 film by large-area interferometric lithography and dry etching. Two-dimensional, 285-nm period, arrays of InAs islands having heights of 10–15 nm with three different bottom diameters of 50–100, ∼150, and ∼200 nm were selectively grown on SiO2 patterned substrates by molecular beam epitaxy. Growth conditions were chosen to provide a very-low sticking coefficient of In atoms on the SiO2 surface suppressing volume contribution from migration of In atoms incident on the SiO2 mask region to nearby open GaAs surface areas. Formation of spherical-section InAs dots with diameters of about 50 nm relying on nanoscale-limited area growth is demonstrated. As the diameter of the hole increases beyond 150 nm, InAs islands deviate from a spherical section and self-assembled quantum dots confined within the open GaAs surface appear. A relation between dot formation and the nanoscale growth area is proposed, with a transition from single- to multiple-dot formation occurring at hole diameters of ∼100–150 nm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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