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  • 1
    Electronic Resource
    Electronic Resource
    Domain stability of multilayered CoZrCr/Ti stripes : 35TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS San Diego, California (USA) 29 Oct−1 Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5859-5861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The narrow-track perpendicular magnetic heads with multilayered CoZrCr/Ti main-pole films developed here reproduce output signals having increased stability as the number of pairs of CoZrCr layers increases. To see why, a Kerr-effect apparatus was used to measure the relationship between dynamic domain behavior and the number of pairs of CoZrCr layers for multilayered narrow CoZrCr/Ti stripes of different widths. Increasing the number of pairs of CoZrCr layers suppressed wall displacement and stabilized the domain structure. The domain stability agreed fairly well with the stability in perpendicular heads having multilayered CoZrCr/Ti main-pole films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347848
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of CoFe composition of the spin-valvelike ferromagnetic tunnel junction (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6055-6057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance (MR) ratio of a ferromagnetic tunnel junction with a spin-valvelike structure of NiFe/CoFex/Al–O/CoFex/NiFe/IrMn/Al is dependent upon CoFe composition. MR ratio increases with increasing Fe content, and shows a maximum of 42% for Fe content 26 at. % after annealing at 225 °C. Before annealing, the bias voltage dependence depend on Fe content, however, the bias voltage dependence did not depend on Fe content after annealing. We think that the increasing defect states in the barrier layer with the increasing Fe content in CoFex layer cause the degradation of the bias voltage dependence. After annealing, the defect states of samples decrease to same level, and the bias voltage dependencies of samples are improved and become same. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372610
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  • 3
    Electronic Resource
    Electronic Resource
    Geometrostatis and the current algebra of nonlinear sigma models on supergroup manifolds (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 445-447 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The radiative correction of nonlinear sigma models on supermanifolds that have invertible metrics is investigated. It will be shown that the equation of motion for Riemannian supergravity (nonstandard supergravity) is derived from a consistency condition. This condition can be satisfied in the case of supergroup manifolds. We shall explicitly construct the model following the methods of Braaten, Curtright, and Zachos [E. Braaten, T. L. Curtright, and C. K. Zachos, Nucl. Phys. B 260, 630 (1985)] and of Witten [E. Witten, Commun. Math. Phys. 92, 455 (1984)]. Finally, super-Kac–Moody algebras of these models are derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527624
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  • 4
    Electronic Resource
    Electronic Resource
    Development of a microwave ion source for negative oxygen ion beam production (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4911-4915 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A volume production type microwave negative ion source has been developed for negative ion beam processes such as ion implantation and ion beam deposition, etc. In order to increase efficiency of negative oxygen ion production, we employed a double plasma cell system in which two plasma cells were connected to each other. A high density primary plasma was generated in the first plasma cell with 2.45 GHz microwave power and negative ions were effectively generated in the second plasma cell. A filter magnetic field of about 0.1 T was applied on the second plasma cell to prevent diffusion of high energy electrons from the first plasma cell. Oxygen negative ion beams were generated by this method and the maximum oxygen (O−) ion current of 142 μA (current density: 325 μA/cm2) was extracted continuously from the ion source at an extraction voltage of 30 kV and a microwave power of 500 W. This value was three orders larger than that obtained by a single plasma cell system without the filter magnetic field. Molecular oxygen ions (O−2 and O−3) were also obtained at percentages of about 20% and 2% of the major O− ion intensity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146173
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of the oxidation process on the electrical characteristics of oxidized nitride films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1140-1142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the oxidation process on the electrical characteristics of metal–oxide–semiconductor (MOS) capacitors were studied. It was found that electrical and time dependent dielectric breakdown (TDDB) characteristics are improved for the MOS capacitor with a wet oxidized nitride film over the N2O oxidized nitride film. The depth profile of the oxidized nitride film is also studied by Auger electron spectroscopy. It is observed that from the top surface of an oxidized nitride film of about 2 nm (nitride film oxidized in the wet oxidation process or in N2O ambient by rapid thermal processing), the level of oxygen is the same but, compared to a N2O oxidized nitride film, the level of nitrogen is greater in a wet oxidized nitride film. The improvement of the electrical and TDDB characteristics of the wet oxidized nitride film over the N2O oxidized nitride can be thought due to the increased amount of nitrogen from the top surface to a depth of nearly 2 nm of the oxidize nitride films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117084
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  • 6
    Electronic Resource
    Electronic Resource
    Direct areal density measurement by activation technique for plastic hollow shell implosion experiments (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2072-2074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fuel areal density ρR measurement of imploded plastic hollow shell targets by use of a neutron activation technique is reported. Silicon was doped as an activatable tracer into a hollow shell of tritium-contained deuterated polymer(CDTSi). This target was imploded by 0.53 μm Nd:glass laser light and the induced radioactivity of 28 Al was measured with a β-γ coincidence counting system. The collection efficiency was calibrated by the use of radioactive tracer 24 Na and was verified by comparing the estimated ρR with that simultaneously measured by a knock-on method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102109
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  • 7
    Electronic Resource
    Electronic Resource
    Ferromagnetic tunnel junctions with plasma-oxidized Al barriers and their annealing effects : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6691-6693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-geometrical Ni–Fe/Co/Al–AlO/Co/Ni–Fe/Fe–Mn/Ni–Fe tunnel junctions were fabricated by magnetron sputtering. To form the insulating layer, an Al layer was reverse sputtered in an atmosphere of either oxygen or oxygen–argon mixture at low power after deposition. The oxidization time necessary to form an AlO barrier was much shorter than that by natural oxidization, lasting for only a half to a few minutes. By adding argon to oxygen, the oxidization was slowed down and high MR ratios were obtained for a wide range of time. A magnetoresistance (MR) ratio of 16% was observed in the as-deposited junction when the barrier was oxidized in oxygen plasma for 35 s. In addition, the MR ratio increased to 24% by annealing at 300 °C. In as-deposited junctions, the tunnel resistances were increased by increasing the plasma oxidization time, but the MR ratios gradually decreased. The estimated tunnel barrier width increased and the barrier height decreased with the plasma oxidization time. After annealing, the MR ratio increased only for those junctions oxidized for short times. This suggests that the remaining Al between the AlO and the Co surface plays an important role in the effects of annealing. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367933
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  • 8
    Electronic Resource
    Electronic Resource
    Recrystallization of AlNx (x〈1) thin films induced by N implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 185-186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion implantation on recrystallization of films has been investigated using AlNx (x〈1) films as targets. The 750 A(ring) AlNx (x〈1) films were deposited on Si(111), glassy carbon, and commercial glass by an activated reactive evaporation method in a nitrogen atmosphere. The 80 keV N+ implantations were carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+ions/cm2 at 1×10−6 Torr. The x-ray diffraction patterns revealed that N implantation enhances a (002) orientation of AlN, growth of which depends on doses. The optical transmittance of the AlNx films is also improved by N implantation, depending on doses. N implantation into AlNx (x〈1) even without any annealing is effective for recrystallization of the films, which leads to improvement of optical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100581
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of trapping states in a Nb-doped rutile by admittance spectroscopy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4191-4196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to obtain semiconductivity, rutile crystals have been doped with Nb by means of diffusion. The resulting Nb-doped rutile crystals have an electrical resistivity (approximately-equal-to)80 Ω cm at room temperature. Impedance analysis of a Nb-doped TiO2-Au diode suggests that the measurement frequency must be lower than 10 kHz to detect the capacitance and conductance of the depletion layer. Thus, an admittance spectroscopic method is used to study traps in the diode of the Nb-doped TiO2-Au. Two trap levels, located at 0.24 and 0.37 eV below the bottom of the conduction band, have been detected by this method. The state densities and capture cross sections of these trap levels are also determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337505
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  • 10
    Electronic Resource
    Electronic Resource
    Experimental studies on debris collection for radiochemistry in inertial confinement fusion (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2623-2627 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report several experimental results on debris collection for radiochemistry in inertial confinement fusion research. The collection efficiency was measured by means of radioactive tracers 24 Na, 82 Br, 152m1 Eu and activatable tracer 151 Eu in glass or plastic shells. It is shown that the collection efficiency depends on the atomic weight of the tracer and the surface condition of the collector, and does not greatly depend on the initial areal density of the target, in our experimental conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141848
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