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  • Springer  (6)
  • American Institute of Physics (AIP)  (5)
  • Hindawi  (1)
  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3336-3338 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have observed a conversion of step configuration of 3.5° miscut Si(001) surface after depositing several monolayers of Ge by using a scanning tunneling microscope. For a 3.5° miscut Si(001) surface, terraces are spaced by double-atom height steps and all dimer rows, either on the upper terrace or on the lower terrace of a step, are normal to the step edge, defined as single-domain (1×2) surface. After depositing 2 ML of Ge, the surface is still single domain, but dimer rows have changed their direction, running parallel to the step edge and single domain (2×1) appeared. The reason for such conversion is attributed to the strain that existed on the epilayer of Ge. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1366-1368 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: At a medium substrate temperature of 400 °C and a lower As flux, we have grown an ultrafast AlGaAs/GaAs photorefractive multiple quantum well (MQW) structure by molecular beam epitaxy. The as-grown sample exhibits strong photorefractive effect under the transverse Frantz–Keldysh geometry. A peak electroabsorption of 2100 cm−1 is measured in the as-grown sample in an 11 kV/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. After postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 °C. Using optical transient current spectroscopy, deep levels are measured in these samples. It is found that deep levels are stable against annealing until 700 °C. Using a pump-probe technique, carrier lifetimes are measured at room temperature. We find that the as-grown sample has a lifetime of 20 ps, while the 700 °C annealed sample has a lifetime of more than 200 ps. The ultrafast lifetime in the as-grown sample is caused by point defects, not by As clusters. Our result show that AlGaAs/GaAs MQW structure grown around 400 °C has better performance of the photorefractive effect. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3765-3767 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence (PL) properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. The epilayers were grown on GaAs (001) by radio-frequency molecular-beam epitaxy. It was found that when the carrier concentration is increased from 5×1015 to 2×1018 cm−3, the PL peak shifted towards low energy, from 3.246 to 3.227 eV, and the PL linewidth increased from 77.1 to 121 meV. The PL peak shift is explained by the band gap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2185-2187 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using a modified method for measuring photorefractive two-wave mixing gain, we presented the experimental demonstration of nonreciprocal energy transfer during two-wave mixing under an external magnetic field. The nonreciprocal energy transfer is observed with mixing gain approaching 164 cm−1 and showed the characteristics of nonlinearity and saturation. A simple model of resonant tunneling and ultrafast carrier lifetime was proposed to explain these results. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 504-506 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence (PL) spectroscopy and carrier lifetime measurement has been used to characterize optical properties of defects in the low-temperature (LT) grown GaAs/AlGaAs multiple quantum well structures. Two sets of samples were grown at 400 °C by molecular beam epitaxy on nominal (001) and miscut [4° off (001) towards (111) A] GaAs substrates, respectively. After growth, samples were subjected to 30 s rapid thermal annealing at 600–800 °C. It is found that after annealing, two defect-related PL features appear in the samples grown on nominal (001) GaAs substrates, but not in those grown on miscut (001) GaAs substrates. The carrier lifetimes are about 31 and 5 ps in as-grown samples grown on nominal and miscut (001) GaAs substrates, respectively. The different PL spectra and carrier lifetimes in two sets of samples are attributed to different structures of the AsGa-like defects formed during LT growth. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Springer
    Climate dynamics 12 (1996), S. 299-312 
    ISSN: 1432-0894
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Geologie und Paläontologie , Physik
    Notizen: Abstract The wind-evaporation-convection feedback in the tropics is demonstrated to strongly affect the mean state of surface climate in atmospheric general circulation models. The feedback is shown to be very effective in channeling perturbations from one component of the climate system to other components, e.g., from evaporation to surface wind and from atmospheric convective activity to evaporation. It also provides an effective channel to pass on atmospheric perturbations in the middle and upper troposphere to the surface. As an illustration, it is shown that surface evaporation over tropical oceans is connected with cloud absorption of shortwave radiation through this feedback. Insufficient shortwave cloud absorption, causing excessive shortwave radiation at the surface as is common in most of the climate models, leads to excessive evaporation. Quantitatively, sensitivity of evaporation to short-wave cloud absorption, when averaged over the whole tropics, can be described by an approximate balance of variations in atmospheric radiative cooling and latent heating. This balance is achieved by the impact of radiation on convection, and then on the surface wind and evaporation. This mechanism calls for the need to include atmospheric processes far beyond the surface for improvements of the quality of surface climate simulation.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Springer
    Climate dynamics 12 (1996), S. 299-312 
    ISSN: 1432-0894
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Geologie und Paläontologie , Physik
    Notizen: Abstract. The wind-evaporation-convection feedback in the tropics is demonstrated to strongly affect the mean state of surface climate in atmospheric general circulation models. The feedback is shown to be very effective in channeling perturbations from one component of the climate system to other components, e.g., from evaporation to surface wind and from atmospheric convective activity to evaporation. It also provides an effective channel to pass on atmospheric perturbations in the middle and upper troposphere to the surface. As an illustration, it is shown that surface evaporation over tropical oceans is connected with cloud absorption of shortwave radiation through this feedback. Insufficient shortwave cloud absorption, causing excessive shortwave radiation at the surface as is common in most of the climate models, leads to excessive evaporation. Quantitatively, sensitivity of evaporation to shortwave cloud absorption, when averaged over the whole tropics, can be described by an approximate balance of variations in atmospheric radiative cooling and latent heating. This balance is achieved by the impact of radiation on convection, and then on the surface wind and evaporation. This mechanism calls for the need to include atmospheric processes far beyond the surface for improvements of the quality of surface climate simulation.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Publikationsdatum: 2012-10-05
    Beschreibung: This paper is concerned with a class of linear impulsive delay differential equations. Asymptotic stability of analytic solutions of this kind of equations is studied by the property of delay differential equations without impulsive perturbations. New numerical methods for this kind of equations are constructed. The convergence and asymptotic stability of the methods for this kind of equations are studied.
    Print ISSN: 1110-757X
    Digitale ISSN: 1687-0042
    Thema: Mathematik
    Publiziert von Hindawi
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Publikationsdatum: 2017-05-01
    Print ISSN: 0010-5082
    Digitale ISSN: 1573-8345
    Thema: Energietechnik , Maschinenbau
    Publiziert von Springer
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Publikationsdatum: 1996-04-01
    Print ISSN: 0930-7575
    Digitale ISSN: 1432-0894
    Thema: Geologie und Paläontologie , Physik
    Publiziert von Springer
    Standort Signatur Erwartet Verfügbarkeit
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