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  • 1
    Electronic Resource
    Electronic Resource
    Influence of Ni impurities at the Si-SiO2 interface on the metal-oxide-semiconductor characteristics (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7394-7399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Behavior of Ni impurities at the Si-SiO2 interface of metal-oxide-semiconductor (MOS) was studied with electrical measurements and transmission electron microscopy. Ni impurities were introduced in silicon wafers by ion implantation to the doses of 1.0×1015 and 1.0×1014 cm−2, then the MOS capacitors were fabricated on these wafers. The Ni impurities either nucleated (1.0×1015 cm−2), or scattered uniformly (1.0×1014 cm−2) at the Si-SiO2 interface. The nucleated Ni precipitate is in a metallic B-NiSi2 phase, and penetrates the silicon oxide. The precipitate is thought to make a weak spot in the silicon oxide, where the electric field is strengthened. Uniformly scattered Ni impurities near the Si-SiO2 interface increase the surface state density because they combine with the small steps caused by ion implantation damage. The increase in the leakage current with the Si-SiO2 interface roughness can be semiquantitatively explained by averaging Fowler–Nordheim currents through the Si-SiO2 interface roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356654
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature sputter deposition of high-coercivity Co-Cr films for perpendicular recording : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5984-5986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-temperature magnetron sputter-deposition method for Co-Cr medium has been developed. Films of 17 wt % Cr-Co were deposited to a thickness of 100–200 nm onto glass substrates over an extremely wide range of Ar gas pressures at room temperature. A high hcp c-axis orientation to the film normal (Δθ50〈6°) could be obtained even at pressures over 50 Pa (375 mTorr) when the films were deposited onto a well-oriented c-axis Ti underlayer. Co-Cr films with a perpendicular coercivity as high as 1000 Oe with an anisotropy field of 5 kOe were obtained at extremely high Ar pressures; e.g., 70 Pa (525 mTorr). Scanning electron microscopy observations showed that the films had a fine columnar structure with distinct grain boundaries and the grain size was dramatically reduced with the introduction of the Ti underlayer. It was determined that the large anisotropy field for the Co-Cr films is attributed to crystalline anisotropy. The mechanism of magnetization reversal in the films is suggested to be rotational.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355533
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of FeSe thin films prepared on GaAs substrate by selenization technique : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5177-5179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FeSe thin films were prepared on GaAs(100) substrate by the selenization of Fe films using molecular-beam epitaxy. FeSe compound thin films were obtained at a substrate temperature above 380 °C. From the depth profiles of Fe and Se in the selenized film measured by Auger electron spectroscopy, it was confirmed that an FeSe layer with a constant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se in the film was 1/3. It was different from the composition in Fe3Se4 or Fe7Se8, which is a stable bulk FeSe compound. From the measured M–H curve, it was found that the obtained FeSe film consisted of two phases with different magnetic properties. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365162
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance of perpendicular magnetic Co/Au multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5175-5182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Au multilayers have been prepared on glass substrates by electron-beam evaporation techniques. The perpendicular anisotropy is induced when the Co layer thickness is less than 12 A(ring) and its origin is discussed phenomenologically. In the perpendicular magnetic multilayers, large giant magnetoresistance appears and it consists of hysteretic and nonhysteretic components. The occurrence mechanism of these components has been discussed and it is suggested that the former arises from antiparallel spin alignment between adjacent Co layers due to the random wall position layer by layer, and the later is related to the granular-type giant magnetoresistance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363501
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic structure and perpendicular magnetic anisotropy of rare-earth (Nd,Pr,Gd)/Fe multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 365-372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural phase and the magnetic anisotropy of Nd/Fe, Pr/Fe, and Gd/Fe multilayers have been examined using magnetization measurements and conversion electron Mössbauer spectrometry. With decreasing Fe layer thickness dFe, the structural phase of the Fe layer changes from bcc crystalline to amorphous at the critical thickness dFec of 17–20 A(ring) via an intermediate phase, which contains a paramagnetic phase in the Nd/Fe and Pr/Fe systems, but not in Gd/Fe. At just above dFec, Nd/Fe and Pr/Fe multilayers exhibit perpendicular anisotropy, which originates from the interface anisotropy due to the one ion anisotropy of Nd and Pr. However, Gd/Fe multilayers show in-plane magnetization because of the S-ionic Gd. Below dFec, the magnetization increases from nearly zero with decreasing dFe because of the exchange interaction between Fe and the rare earth (Nd,Pr,Gd). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360839
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of magnetostrictive actuators using rare-earth (Tb,Sm)-Fe thin films (invited) : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6994-6999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new concept is proposed for the microactuation based upon magnetostriction. Magnetostrictive bimorph cantilever actuators and a traveling machine, composed of the magnetostrictive amorphous Tb-Fe and Sm-Fe thin films on a polyimide substrate, were fabricated. These actuators moved without power supply cables. The 3-mm-long cantilever actuator exhibited the large deflection above 100 μm in as low a magnetic field as 300 Oe and above 500 μm at resonant frequency in an alternating magnetic field of 300 Oe. Such unique characteristics suggest that magnetostriction is useful as the driving force of the microactuator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358067
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  • 7
    Electronic Resource
    Electronic Resource
    High recording performance of Co–Cr medium sputter-deposited at high Ar pressure and high substrate temperature : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5362-5364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co–Cr films were prepared by sputter deposition at a high Ar pressure of 70 Pa with elevated substrate temperatures up to 400 °C. Films of 100 nm thickness were deposited using a 19 at. % Cr–Co target onto a well c-axis oriented Ti underlayer prepared on glass disk substrates. The perpendicular coercivity, Hc⊥, of the films increased from 660 to 1940 Oe with increasing temperature. The films with high Hc⊥ exhibited a dense fine microstructure with distinct grain boundaries. The recording performance of the disk samples were measured by using a metal in gap type ring head, comparing with that of conventional Co–Cr films deposited at a low Ar pressure of 0.2 Pa. It was found that the high pressure deposited Co–Cr film exhibited higher output by more than 2 dB at the densities below 320 kFRPI (flux reversals per inch) compared with the conventional film with the same high coercivity. The D50* of as high as 250 kFRPI and the highest recordable density of over 600 kFRPI were confirmed for the new type of Co–Cr film deposited at 70 Pa and at 400 °C. The noise level of the film, however, was slightly higher than that of conventional method films, disagreeing with the suggestion of the microstructure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361326
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  • 8
    Electronic Resource
    Electronic Resource
    Permeability of microstrip thin films of various materials : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5913-5915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft magnetic bilayered microstrip films have been studied for various materials such as Ni–Fe–Mo–Cu, Co–Zr–Mo–Ni, Fe–Si–N, and Ni–Fe in terms of their magnetization dynamics. Effects of the strip width and the interlayer thickness on permeability were investigated. An optimum interlayer thickness was found for obtaining the maximum permeability for those films except Fe–Si–N, but the optimum value differs in magnetic film material. A scanning Kerr effect microscope observation reveals that permeability variations with strip width related to changes of the dynamic domain configurations of the strips. All magnetic film materials except Fe–Si–N show a high permeability of more than 1000 at 2 μm strip width at each optimum interlayer thickness. When the film width is reduced to 1 μm, however, the permeability decreases significantly regardless of the interlayer thickness and kinds of the film materials. For such narrow strip film, a higher permeability is obtained for higher anisotropy field. It is concluded that the shape anisotropy of the micropatterned films must be controlled for achieving a higher permeability. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362170
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  • 9
    Electronic Resource
    Electronic Resource
    Optically pumped ZnSe-based vertical cavity surface emitter with SiO2/TiO2 multilayer reflector (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4784-4786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a SiO2/TiO2 high-reflectivity dielectric multilayer mirror specifically suitable for ZnSe-based vertical cavity surface-emitting lasers operating in the green-to-blue spectral region. In the fabrication process, the thickness of each layer has been precisely controlled by using an in situ optical monitoring system. A photo-pumped ZnCdSe/ZnSe/ZnSSe surface-emitting laser has also been demonstrated using the SiO2/TiO2 dielectric multilayer mirrors stacked with the ZnCdSe/ZnSe/ZnSSe structures. Cavity mode emission with a linear polarization has been observed in the direction normal to the surface at 20 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359758
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  • 10
    Electronic Resource
    Electronic Resource
    Linearity and hysteresis in the magnetoresistive response of (NiFe,NiFeCo)/Cu and Co/Cu/NiFe multilayers in patterned stripes : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6379-6381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linearity and hysteresis in the magnetoresistive (MR) response of NiFe/Cu and NiFeCo/Cu multilayers prepared by ion beam sputtering, and Cu/Co/Cu/NiFe multilayers prepared by MBE are investigated. These characteristics in the linear regions for the second peak of antiferromagnetically coupled NiFe/Cu multilayers are almost the same as those of NiFeCo/Cu ones at 50-Hz ac applied fields. The MR amplitude at the first peak is inferior to that at the second one, whereas, the linearity and hysteresis are superior. In weakly coupled Cu/Co/Cu/NiFe multilayers, a nonhysteretic MR response is obtained at a NiFe layer thickness of 10 A(ring). The linearity and symmetry around the zero magnetic field of the MR curve depend on the Cu layer thickness. When the thicknesses of the NiFe and Cu layers are 10 and 45 A(ring), respectively, good linearity and no hysteresis are observed without biasing techniques. The output levels in the linear regions of three different multilayers are 1.5–2.5 times as large as that of the conventional Permalloy film. These multilayers are promising materials for the fabrication of MR head for ultrahigh density recording.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355356
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