ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-11-24
    Description: Passivated contacts (poly-Si/SiO x /c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF 2 ), the ion implantation dose (5 × 10 14  cm −2 to 1 × 10 16  cm −2 ), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV oc ) of 725 and 720 mV, respectively. For p-type passivated contacts, BF 2 implantations into intrinsic a-Si yield well passivated contacts and allow for iV oc of 690 mV, whereas implanted B gives poor passivation with iV oc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V oc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF 2 implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V oc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    facet.materialart.
    Unknown
    IUPAC-NIST Solubility Data Series. 103. Oxygen and Ozone in Water, Aqueous Solutions, and Organic Liquids (Supplement to Solubility Data Series Volume 7) (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-10-10
    Description: This volume is an update of the Solubility Data Series Volume 7 published in 1981 on oxygen and ozone. For this volume, the literature was covered from 1981 to 2009 with some papers from 2010. Some earlier papers missed in the 1981 volume are included. Interest in the solubility of oxygen and of ozone continues to be high. The solubility of oxygen in water at low pressure seems well established, but more work is needed on the solubility of oxygen in water at high pressure and high temperature. There is now a wealth of salt-effect data on the solubility in aqueous salt solutions, but some glaring discrepancies still exist. Little has been done on salt effects at high pressure and high temperature. The solubility data of oxygen in hydrocarbons seem sparse. The solubility of oxygen in alcohols through C 5 seems well established. Between the 1981 volume and this volume, there are solubility data in over 70 fluorocarbons and fluorocarbon compounds with O, H, S, and N. A new area is the solubility of oxygen in ionic liquids, which are becoming increasingly important as replacement solvents for volatile organic solvents. Information on the solubility of ozone in water, aqueous solutions and organic liquids has also been updated.
    Print ISSN: 0047-2689
    Electronic ISSN: 1529-7845
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 3
    facet.materialart.
    Unknown
    IUPAC-NIST Solubility Data Series. 103. Oxygen and Ozone in Water, Aqueous Solutions, and Organic Liquids (Supplement to Solubility Data Series Volume 7) (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-19
    Description: This volume is an update of the Solubility Data Series Volume 7 published in 1981 on oxygen and ozone. For this volume, the literature was covered from 1981 to 2009 with some papers from 2010. Some earlier papers missed in the 1981 volume are included. Interest in the solubility of oxygen and of ozone continues to be high. The solubility of oxygen in water at low pressure seems well established, but more work is needed on the solubility of oxygen in water at high pressure and high temperature. There is now a wealth of salt-effect data on the solubility in aqueous salt solutions, but some glaring discrepancies still exist. Little has been done on salt effects at high pressure and high temperature. The solubility data of oxygen in hydrocarbons seem sparse. The solubility of oxygen in alcohols through C 5 seems well established. Between the 1981 volume and this volume, there are solubility data in over 70 fluorocarbons and fluorocarbon compounds with O, H, S, and N. A new area is the solubility of oxygen in ionic liquids, which are becoming increasingly important as replacement solvents for volatile organic solvents. Information on the solubility of ozone in water, aqueous solutions and organic liquids has also been updated.
    Print ISSN: 0047-2689
    Electronic ISSN: 1529-7845
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 4
    facet.materialart.
    Unknown
    Controlled exfoliation of (100) GaAs-based devices by spalling fracture (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-08
    Description: The importance of exfoliation techniques increases as the semiconductor industry progresses toward thinner devices as a way to reduce material costs and improve performance. The controlled spalling technique is a recently developed substrate removal process that utilizes the physics of fracture to create wafer cleavage parallel to the surface at a precise depth. In this letter, we apply principles of linear elastic fracture mechanics to predict the process conditions needed to exfoliate (100) GaAs of a desired thickness. Spalling can be initiated in a controllable manner, by depositing a stressor film of a residual stress value just below the threshold value to induce a spontaneous spall. Experimental data show process window requirements to controllably spall (100) GaAs. Additionally, experimental spall depth in (100) GaAs compares well to spalling mechanics predictions when the effects of wafer thickness and modulus are considered. To test spalled material quality, III-V single junction photovoltaic devices are lifted off of a (100)-GaAs substrate by spalling methods and electrical characteristics are recorded. No degradation is observed in the spalled device, illustrating the potential of this method to rapidly produce thin, high quality devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 5
    Electronic Resource
    Electronic Resource
    Mathematical model of internal temperature profile of GaAs during rapid thermal annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8037-8041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In previous studies it was reported that GaAs samples which were rapid thermal annealed exhibit bright bands adjacent to the surfaces in cathodoluminescence images of the cross sections. It is possible that the presence and depth of these bright bands are related to thermal stresses in the GaAs resulting from thermal gradients during heating and cooling. To investigate this possibility, a one-dimensional mathematical model was developed to predict the temperatures through the thickness of the GaAs. Calculations of the thermal stress field show that the thermal stresses do not correlate with the depth of the bright bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347449
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of luminescence in GaAs by low levels of Cu (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a previous paper it was reported that GaAs, after rapid thermal annealing, exhibited bright regions adjacent to the sample surfaces in the cross-section cathodoluminescence image. In this report it is shown that these bright bands are associated with the presence of Cu, as indicated by photoluminescence measurements. It is proposed that the Cu diffuses into GaAs during annealing, from residual Cu on the sample surface. To test this hypothesis, samples were treated to alter the residual Cu prior to annealing. Removing the Cu markedly reduced the depth of the bright bands; adding Cu markedly increased the depth, in agreement with the proposed mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104524
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Examination of rapid thermal annealed GaAs using cathodoluminescence (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2671-2673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of semi-insulating GaAs were annealed for 5–18 s at 650–950 °C using rapid thermal annealing. Cathodoluminescence was used to compare as-received and annealed samples to determine the effect of the heat treatment. Cathodoluminescence images of the surface of samples show a change in background intensity after heating. Images of cleaved cross sections indicate that the change is not uniform throughout the thickness of the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101031
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Ordering and stability of Pb1−xEuxTe alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1504-1508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed two kinds of ordering in Pb1−xEuxTe alloys using transmission electron microscopy. One kind of ordering corresponds to long wavelength periodicities of ∼18 A(ring) that are observed for x∼0.4–0.51 along the 〈110〉 and 〈111〉 directions. This ordering is similar to that of spinodal decomposition observed in metallic alloys and is explained by a composition as well as interplanar spacing modulation. We have also obtained electron diffraction patterns from these alloys that show weak diffraction spots with reciprocal lattice vectors that are not allowed for the PbTe structure. The observation of these extra spots can be explained by assuming that the Pb1−xEuxTe alloy forms an ordered compound or superlattice with lattice constants that are multiples of the lattice constants of PbTe. We also present models for the structure of these superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339933
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Optical charge injection into a gallium arsenide acoustic charge transport device (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2425-2430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport of photoelectrons by the 〈110〉 propagating surface acoustic wave (SAW) on (100)-cut gallium arsenide was observed using the acoustic charge transport (ACT) principle reported by Hoskins, Morkocursive-theta, and Hunsinger [Appl. Phys. Lett. 41, 332 (1982)]. By directly modulating an AlGaAs light-emitting diode, pulses of near-infrared radiation (λp=730 nm) were applied to semitransparent (25 nm thick) chromium windows on the device surface. Four such windows separated by 250 μm were positioned along the otherwise opaque Schottky channel plate of the ACT device. Electron-hole pairs generated by incident radiation were separated by the electrostatic field in the depleted n-type channel region. Calculations suggested that the separation time would be small enough to reduce radiative recombination and allow enough electrons to collect in each acoustically defined well passing beneath the injection window for detection at the output. Electrons, separated from the holes, were subsequently bunched and carried along by the electric field coupled to the SAW. Output pulse delays for injection over each window were in agreement with theory taking into account the window positions and the SAW velocity (2864 m/s). Quantum efficiency, defined as the number of electrons collected at the output per incident photon on the chromium window, was approximately 0.09. Operated at 360 MHz, the experimental device had a charge transfer efficiency in excess of 0.992. It is believed that the injection technique described may be of use in future optical signal processing or imaging applications using ACT.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341037
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Low-frequency oscillations in semi-insulating InP (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2906-2907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Goronkin and Maracas (IEDM Conf. Proc., Dec. 1984, p. 182) reported a method of obtaining information on deep levels in GaAs by analyzing the temperature dependence of low-frequency current oscillations observed in semi-insulating material. In the present work, a modified version of their method was applied to Fe compensated InP. Power density spectra showed one main peak and several less well defined. An Arrhenius plot of log(T2/2f) versus 1/T gave an activation energy of 0.47 eV for the main peak, close to the value found by optical transient current spectroscopy (OTCS). The method is complementary to OTCS in that the same equipment is used and information is obtained more easily on levels which exhibit field-enhanced trapping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106815
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...