Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2572-2574
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the microstructural development and optical properties of epitaxial Ge1−xCx alloys (0〈x〈0.1) grown on Si(100) by low-temperature (200 °C) molecular-beam epitaxy. Films with C concentrations below 2%–3% grow in 2D layers, while films with C higher than 5% form 3D islands after initial layer growth. X-ray-diffraction indicates that less than 1% C may have been substitutionally incorporated. Spectroscopic ellipsometry measurements of the films' optical constants show small systematic changes with increasing C concentration. These changes occur primarily near 2 eV, the E1 critical point in Ge. No new features attributable to Ge–C vibrational modes could be identified using Raman spectroscopy. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117703
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