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  • Elsevier  (355)
  • American Institute of Physics (AIP)  (26)
  • Institute of Physics  (25)
  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4368-4372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the thermal stability of ZnSe-based single quantum well structures grown on a GaAs substrate by applying a rapid thermal annealing process. The photoluminescence intensity of the quantum well was used as a monitor for the thermal changes induced by the annealing process. X-ray diffractometry yields information about the crystal quality and the strain condition before and after the thermal treatment. As a main result, we found that the thermal stability of the quantum well photoluminescence signal critically depends on the thickness of the II–VI buffer layer, i.e., the distance between the active layer and the GaAs-II–VI heterointerface. For a buffer layer thickness of about 38 nm, the quantum well signal is totally quenched after a 1 min annealing step at 500 °C, while clear luminescence signals can be observed in samples with a 1 μm buffer even for a 750 °C process. Additionally, by comparing CdZnSe/ZnSe and ZnSe/ZnSSe quantum wells, we found that the Cd–Zn interdiffusion seems to be more efficient than the S–Se interdiffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361746
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  • 2
    Electronic Resource
    Electronic Resource
    Stimulated emission from a (CdMg)Te separate confinement quantum well laser (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5456-5458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article lasing action of (CdMg)Te quantum well laser structures is reported. The separate confinement quantum well laser structures were grown by molecular beam epitaxy. Stimulated emission has been observed at 77 K and at room temperature. The structures emitted at wavelengths of around 650 nm at room temperature. A (CdMg)Te/CdTe superlattice has been used for the active layer as well as for the electrical confinement layer. Due to this an efficient radiative recombination even at room temperature could be obtained. The distribution of the intensity of the light across the waveguide has been calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355707
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  • 3
    Electronic Resource
    Electronic Resource
    A three-well quantum well infrared photodetector (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3396-3398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified quantum well infrared photodetector (S-QWIP) has been designed and demonstrated which shows very high performance. The S-QWIP is designed to have only three quantum wells with detection peak wavelengths at 7.3, 8.3, and 10 μm, for the first, second, and third well, respectively. The two barriers between the three wells are graded to block the dark current effectively when reverse bias is applied. It also produces a built-in potential in the structure for a photovoltaic (PV) effect. The two end barriers are designed with different widths so that the electron transport can be compared when the bias directions are changed. The responsivity of the S-QWIP shows three photoreponse peaks at zero bias (PV effect) and migrates to one wide peak when the bias increases. The device is BLIP at 85 K within the operable reverse bias range. The responsivity is greatly enhanced at higher temperature and small bias. The conversion efficiency of photon absorption to photocurrent calculated conservatively at a bias voltage −0.8 V and peak wavelength 8.5 μm is 29%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117271
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  • 4
    Electronic Resource
    Electronic Resource
    Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 933-935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed picosecond time-resolved measurements on In0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101728
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  • 5
    Electronic Resource
    Electronic Resource
    Be-enhanced CdSe island formation in CdSe/ZnSe heterostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7051-7055 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Be-enhanced formation of CdSe quantum dots in CdSe/ZnSe heterostructures grown by migration enhanced epitaxy on (001)GaAs substrates has been investigated using photoluminescence spectroscopy, x-ray techniques (diffraction and reflectometry), and transmission electron microscopy. Coverage of the ZnSe starting surface with a fractional monolayer of beryllium selenide leads to enhanced island formation well below the CdSe thickness of 0.6 monolayer corresponding to the onset of the CdSe-rich island formation in the Be-free structures. The effect of the fractional Be coverage is demonstrated by observation of sharp lines in the photoluminescence signal from patterned mesas with dimensions down to 60 nm, which is due to the emission from individual exciton localization sites attributed to quantum dots. X-ray diffraction and reflectometry measurements on CdSe/ZnSe short-period superlattices with the submonolayer CdSe insertions confirm an enhanced roughening of the CdSe layer morphology in the case of beryllium coverage. Cross-sectional transmission electron microscopy on the SLs with BeSe fractional monolayer exhibits Cd-induced stress modulation along the CdSe sheets with a lateral scale of ∼4 nm, that can also be interpreted in favor of the BeSe-nucleated CdSe-based quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328784
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of deep-level defects in In1−xGaxAs/InP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 708-712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New characterization data are presented for the deep-level defects observed in photoluminescence (PL) spectra of InGaAs near 0.1 eV within the band gap. The literature regarding these defects is summarized and compared to the results of this study. Defects are seen to be present in In-rich, Ga-rich, and lattice-matched In1−xGaxAs/InP epilayers. The PL spectra vary depending on alloy composition and crystal growth conditions. PL spectra at 77 K for 0.46〈x〈0.50 and input laser powers of 9–18 W/cm2 are given for material grown by organometallic vapor phase epitaxy. Hall mobility and Auger electron specroscopy data are also give for these epilayers. The cause of the defects is unknown, but it is not InP substrate doping or growth impurities. Imperfect arsenic incorporation may be involved, as evidenced by the dependence of PL spectra on growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341965
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence efficiency study of wet chemically etched CdTe/Cd1−xMgxTe wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1815-1817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically active semiconductor wires with lateral extensions between 60 nm and 5 μm based on CdTe/Cd1−xMgxTe quantum well structures have been fabricated by electron beam lithography and subsequent pattern transfer using a wet chemical etching process. Changes of the relative photoluminescence efficiency have been studied by photoluminescence spectroscopy as a function of the wire widths. For narrow wires nonradiative recombination at the wire sidewalls becomes the major recombination mechanism, strongly decreasing the photoluminescence efficiency. We discuss the influence of the exciton diffusion on the photoluminescence efficiency by investigating the wire width dependence of the photoluminescence intensity as a function of temperature and quantum well thickness. High photoluminescence efficiencies are obtained in the case of small diffusion lengths as for example at low temperatures and narrow quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113331
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence study of strong interdiffusion in CdTe/CdMnTe quantum wells induced by rapid thermal annealing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 766-768 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced interdiffusion in CdTe/CdMnTe quantum wells was investigated by photoluminescence spectroscopy. The single quantum well structures were grown by molecular beam epitaxy annealed by rapid thermal annealing for 1 min at temperatures between 380 and 520 °C. A blue shift close to the barrier energy was observed indicating an almost perfect interdiffusion between the well and the barrier material. We derive an activation energy of 2.8 eV for the interdiffusion process from a Fickian diffusion model applied to our experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111006
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1387-1389 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a novel approach to the molecular beam epitaxial (MBE) growth of vertical Fabry–Perot cavities with quarter-wave mirrors. At two selected points, the growth is interrupted and the reflectivity spectrum is measured without removing the wafer from the vacuum system. Corrections are then made in the growth of subsequent layers. By making measurements on the incomplete structure, separate corrections can be made to center both the mirror reflectivity and the cavity resonance at the desired wavelength. We present theoretical and experimental data demonstrating the effectiveness of the approach, and estimate the effects on device performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107546
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  • 10
    Electronic Resource
    Electronic Resource
    Correlation between the exciton mobility and the excitonic linewidth in shallow InxGa1−xAs/GaAs quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 702-704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using time-resolved photoluminescence (PL) spectroscopy with high spatial (0.1 μm) and temporal (50 ps) resolution, we have investigated exciton scattering in a set of strained InxGa1−xAs/GaAs quantum wells as a function of well width Lz and In content x. Summarizing the results, a strong correlation between the exciton mobility and the emission linewidth (LW) is found: High mobilities correspond to small luminescence LWs, indicating reduced exciton scattering. From the dependence of the excitonic mobility on temperature and In content x, we conclude, that interface roughness scattering and alloy scattering, respectively, are the dominant processes controlling the mobility as well as the PL LW at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107827
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