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  • 1
    Electronic Resource
    Electronic Resource
    Substitution effect of Y3+ with Ca2+ in YBa2Cu3O7−δ (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5391-5391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxide superconductor YBa2Cu3O7−δ is known to have a rather free entrance of oxygen into the CuO chain between the BaO layers, and the oxygen deficiency δ is closely related with the critical temperature Tc. (1) When Y3+ site is substituted with Ca2+, the position of the oxygen vacancy is not on the Cu–O plane, but on the CuO chain as well as in the case of YBa2Cu3O7−δ. (2) When this substitution is done, electric neutrality is kept by the release of a half O2− for one Y3+ substitution with one Ca2+. (3) Therefore, the concentration of the positive hole is constant for this substitution, and Tc of the system is kept at the rather high temperature of about 86 K. (4) The relation between Tc and the hole concentration is in good agreement with the non-Ca2+ containing YBCO, and it can be said as a conclusion that the substitution of Y3+ with Ca2+ does not give any effect on the mechanism of the superconductivity of this system. (5) The crystallinity of the system is improved by the substitution to be better sintered and to have more narrow width of the critical temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348014
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally stimulated exoelectron emission from silicon subjected to argon plasma treatment (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7482-7486 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the thermally stimulated exoelectron emission (TSEE) from Ar plasma-treated Si by x-ray photoelectron spectroscopy and by employing a theoretical equation. The sample surfaces were exposed to ambient air after the plasma treatment. The TSEE glow curve (298–623 K) exhibited broad emission peaks at ∼373 and ∼473 K, and an increase in the intensity above 573 K. A theoretical analysis revealed that the glow curves were composed of four peaks except for the increase above 573 K, where each peak had a different trap depth, but almost the same electron affinity. The resolved two peaks in the lower temperature region increased compared to those in the higher temperature region with an increase in the O1s/Si2p ratio and also in the Si2p (oxide)/Si2p (substrate) ratio. The relationship of the surface chemical structure to the resolved four peaks is considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353993
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and recording characteristics for CoPtB(O) rigid disk media : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5572-5574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structure, magnetic properties and recording characteristics of the CoPtB(O) media with various underlayers were investigated. Recording performance of the CoPtB(O) perpendicular media is closely related to the crystallinity. Magnetic properties and recording characteristics are much improved by the Au seed layer, and higher reproduced output can be obtained at 200 kFRPI. CoPtB(O) perpendicular media show higher resolution than the CoPtB(O)/Cr longitudinal one. The reproduced output of perpendicular media at 200 kFRPI is more than 10 dB higher than that of the longitudinal one. Noise characteristics of both media are quite different in the recording density response. With increasing recording density, the media noise of longitudinal media slightly increases, while that of the perpendicular one gradually decreases. This means for the perpendicular media that the media noise might originate not from the magnetic transition but from the irregular magnetic reversals within recorded bits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353654
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  • 4
    Electronic Resource
    Electronic Resource
    Gated neutron streak camera with a uranium cathode (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3592-3595 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A gated neutron streak camera with a uranium oxide cathode has been developed for laser fusion experiments. The energy spectrum of secondary electrons was improved by coating the uranium oxide cathode with thin cesium iodine. The tube design was carried out by computer calculation of electron trajectories. The newly developed streak tube showed a temporal resolution of about 70 ps. This streak camera can be applicable to a neutron yield greater than 1012 with a reasonable signal-to-noise ratio by gating a microchannel plate electron multiplier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141576
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  • 5
    Electronic Resource
    Electronic Resource
    An application of electrically cooled Si detector to fast neutral measurement on CHS : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 615-618 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of fast neutral particle analyzer using Si diode cooled by Peltier module has been designed and developed. It is known that leak current in a solid-state detector is reduced by its use in low temperature. It is shown in this article that Peltier effect provides a very handy way of cooling the detector as long as a temperature around 0 °C is aimed at. The detector was easily cooled down to −1.6 °C and the performance of the detector was studied by the use of x/γ rays from 241Am. The leak current was remarkably reduced as the detector is cooled improving energy resolution from 9.2 keV at room temperature to 4.3 keV at −1.6 °C. In addition, the lower detectable energy limit was expanded from 25 keV to 14 keV. A Si detector is also sensitive to visible light and x ray. Therefore, the detector of our "reference design" is furnished with an evaporated 1000-Å-thick aluminum layer to reduce the visible light and with a lead collimator to reduce the x ray. The detector was finally installed on the Compact Helical System device for a test of overall performance and an energy spectrum from a diagnostic neutral beam was successfully measured. This test was conducted without an Al layer and this result suggests a possibility of eliminating it. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316761
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  • 6
    Electronic Resource
    Electronic Resource
    Imaging Bragg spectrometer for pinched plasma experiments (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3761-3765 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact Bragg spectrometer for monochromatic imaging in the soft x-ray region was designed and examined. With this spectrometer, a pinhole image is simultaneously recorded with a monochromatic image. This makes it possible to easily identify the wavelength when the location of the soft x-ray source fluctuates from shot to shot, such as in the plasma focus and Z-pinch plasma. An rubidium acid phtalate (RAP) flat crystal was examined and monochromatic images of the argon K lines around 4 A(ring) were successfully obtained and displayed. The resolution power and dispersion obtained in situ were compared with the calculated values. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144503
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  • 7
    Electronic Resource
    Electronic Resource
    Development and energy calibration of Si-FNA for LHD fast ion measurement : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 788-791 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Si-FNA (silicon-diode-based fast neutral analyzer) was newly developed at NIFS, which uses an electrically cooled silicon-diode as an energy analyzer. Si-FNA is suitable for energy-resolved profile measurements of fast neutrals since it is compact and inexpensive. Two Si-FNAs were recently designed and installed on the Large Helical Device (LHD) during the experimental campaign of 1999. The basic performance of a Si-FNA was examined by using x/γ-ray sources of 57Co and 241Am. An energy resolution of about 3.5 keV was achieved for optimum shaping times and a resolution of about 6 keV was achieved for shorter shaping times which allowed for the higher counting rates required for LHD. The energy calibration for fast neutrals was performed by injecting neutral beams (NB) into the LHD vessel without target plasmas present. An energy loss of about 37 keV and an energy broadening of about 4.5 keV were observed at the calibration. Excellent slowing-down energy spectra are obtained for NB-injected fast particles without any influences of x/γ-rays. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326007
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  • 8
    Electronic Resource
    Electronic Resource
    Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7273-7281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generation of extra facets on ridge-type triangles with (001)-, (110)-, and (201)-related equivalent slopes on GaAs (111) A substrates and stripes running in the [1¯10], [110], and [100] directions on (001) substrates during molecular beam epitaxy of GaAs/AlGaAs multilayers was investigated. By investigating local variation in layer thickness in the regions adjacent to extra (114)A, (110), and (1¯1¯1¯)B facets common to the (111)A and (001) patterned substrates and extra facets specific to the respective substrates and growth rates of the facets relative to the growth rate on the substrate plane, the orientation-dependent Ga surface diffusion length, λGa, was elucidated as λGa(001)(approximate)λGa(1¯1¯3¯)B〈{λGa(1¯1¯1 ¯)B,λGa(3¯3¯1¯)B,λGa(013),λGa(113)A}〈λGa(159)(approximate)λGa(114)A(approximate)λGa(111)A〈λGa(110). That is, λGa increases in the order of the (001), (1¯1¯1¯)B-related, (111)A-related, and (110) surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365548
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  • 9
    Electronic Resource
    Electronic Resource
    Soft magnetic properties of nanocrystalline FeRuGaSi-Hf alloy films and head characteristics for the embedded thin film tape head : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5907-5909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hf-added FeRuGaSi alloy film has an amorphous structure in the as-deposited state and becomes nanocrystalline after annealing. Due to this structure change from crystalline to amorphous by the addition of Hf, soft magnetic degradation of the film deposited on the slant grooved substrate, which is necessary for the sophisticated embedded thin film (ETF) head structure, is greatly suppressed and the undesirable film stress is relieved. The FeRuGaSi-Hf alloy film has higher resistivity and permeability at high frequencies than those of sendust film, and the read/write characteristics of this alloy film show better performance than sendust film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362168
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic and crystallographic properties of CoCrPt thin films formed on Cr–Ti single crystalline underlayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5354-5356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using an epitaxial growth technique, Co73Cr15Pt12(112¯0) bi-crystalline thin films formed on Cr–Tix(001)[x=0–15 at. %] single crystalline underlayers were prepared to investigate the relationship between the magnetic properties and the lattice distortion in the magnetic layer. X-ray diffraction measurement shows that the best lattice matching between the c axis of the CoCrPt and the [110] direction of the Cr–Ti underlayer is realized and the CoCrPt layer shows an ideal symmetrical hcp. structure when the Ti concentration is 10 at. %, where the maximum magneto-crystalline anisotropy energy and coercivity values are observed. Distortion in the hcp. CoCrPt magnetic crystal grains decreases the uniaxial magneto-crystalline anisotropy energy, thus lowering the attainable medium coercivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361323
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