ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The intermixing of GaAs/(Ga,Al)As heterointerfaces by Ga+ implantation and annealing has been investigated. The damage accumulation in a GaAs/AlAs superlattice turned out to be less rapid than in a GaAs/GaAlAs quantum-well structure. Low-temperature photoluminescence (PL) spectroscopy of a GaAs/AlAs superlattice could be performed for doses as high as 1 × 1016 ions/cm2. The photoluminescence spectra exhibited several emission bands on the high energy side. The number and energy of these blue shifted peaks were found to depend on the implanted dose and as confirmed by secondary ion mass spectrometry, they could be interpreted as the emission of several quantum wells of the superlattice, disordered with different mixing rates. Two regimes were evidenced; while the depth extension of the disordering has been directly related to the post-implantation defects distribution in the high dose regime, some diffusion of these defects during annealing has been pointed out in the low dose regime. Cross-sectional transmission electron microscopy observations have confirmed the influence of the structure of the implanted sample on damage accumulation. Moreover, the decrease of the PL intensity after annealing could be related to the presence of extended residual defects in the implanted layers. The study of the influence of annealing time at 760 °C, has shown that the photoluminescence intensity can be progressively recovered, while the intermixing saturates rapidly.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349554
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