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  • 1
    Electronic Resource
    Electronic Resource
    Management of root-knot disease of tomato by the application of fly ash in soil (1997)
    Oxford, U.K. and Cambridge, USA : Blackwell Science Ltd
    Plant pathology 46 (1997), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The effects of fly ash at different concentrations (0, 10, 20, 30 … 100% vol./vol. in soil) on plant growth and yield were investigated in tomato plants infected or noninfected with root-knot nematode, Meloidogyne incognita (2000 juveniles per plant) in clay pots. An increase in fly ash concentration in the soil correspondingly increased the availability of carbonates, bicarbonates, sulphate, chlorides, B, P, K, Ca, Mg, Mn, Cu and Zn in the soil. The porosity, water-holding capacity, pH, conductivity and cation exchange capacity also increased progressively in the fly ash amended soil. Ash application enhanced plant growth, leaf pigment concentrations, fruit production, weight of fruit/plant and mean fruit weight of both nematode-infected and noninfected tomato plants, being maximum in the soil containing 50 or 60% fly ash. The yield enhancements were 93.6 (infected plants) and 84% (noninfected plants) at 50 and 60% fly ash levels, respectively. Fly ash treatments adversely affected root invasion by juveniles, disease intensity and reproduction of the nematodes. A gradual increase in the ash concentration in soil caused a corresponding decrease in the numbers of invading juveniles, galls and egg masses per root system and eggs/egg mass, being lowest at 100% fly ash i.e. 52, 16, 10 and 81 against 289, 137, 131 and 238 (control), respectively. Linear regression suggested 40% fly ash as the most economic level, enhancing yield of infected plants by 96% and suppressing the nematode disease and reproduction by 63 and 76%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3059.1997.d01-199.x
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition and surface characterization of high quality single crystal GaN layers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3108-3110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, using low pressure metalorganic chemical vapor deposition we grew extremely high quality single crystal GaN films over basal plane sapphire substrates. Optimization of the buffer layers and the total film thickness played a key role in determining the electrical, optical, crystalline and surface qualities. In this communication we present the surface characterization results for these high quality GaN layers. Reflection high energy electron diffraction, low energy electron diffraction (LEED), and electron energy loss spectroscopy data are presented for clean GaN surfaces. The cleaning procedure was developed using Auger electron spectroscopy analysis. These electron diffraction data indicate the grown surface to be excellent single crystal GaN with a wurtzite structure. To the best of our knowledge ours is the first reported LEED data for single crystal GaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352999
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  • 3
    Electronic Resource
    Electronic Resource
    Electrochromism and thermochromism of LixVO2 thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3231-3234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of LixVO2(0≤x(approximately-less-than)0.43) were made by reactive sputtering and annealing post-treatment, followed by electrochemical cycling in an electrolyte containing LiClO4. The films showed electrochromism, and bleached under Li insertion. Weak thermochromism was observed with a drop of the transmittance, accompanied by a conductivity increase, at ∼60 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348542
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  • 4
    Electronic Resource
    Electronic Resource
    Raman and resistivity investigations of carbon overcoats of thin-film media: Correlations with tribological properties : 35th Annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5748-5750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tribological measurements have been performed on a series of carbon films deposited on untextured 95-mm magnetic disks by magnetron sputtering. Raman spectra and resistivity data of these films have been correlated to friction and wear performance. Tribochemical wear, as estimated by the rate of frictional buildup, is correlated to the G-band position in the Raman spectrum. Abrasive wear is best correlated to the I(D)/I(G) intensity ratio of the D and G bands, as well as to electrical resistivity. Interpretation of these data using structural models of amorphous carbon films is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347909
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  • 5
    Electronic Resource
    Electronic Resource
    Laser-produced reduction of pentavalent vanadium in aqueous solutions and V2O5 powder (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1205-1211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reduction of pentavalent vanadium ions in aqueous solutions upon laser irradiation has been confirmed by using optical absorption and fluorescence techniques. X-ray photoelectron spectroscopy (XPS) study revealed that V2O5 was reduced to lower oxides upon laser treatment. Furthermore, the presence of reduced valence states of vanadium has been detected through XPS in vanadium-containing solids such as V2O5/P2O5 glass, thin films prepared separately from V2O5 powder and the glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346718
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  • 6
    Electronic Resource
    Electronic Resource
    Energy-band calculation for periodic potential structure using quantum mechanical impedance (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1661-1664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A generalized technique has been presented to calculate the energy bands of a periodic potential structure using quantum mechanical impedance. Periodic structures having a nonrectangular potential distribution can also be analyzed using this technique. Some computed results are presented for different potential distributions in the periodic structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346648
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4700-4702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently several research groups, including ours, have reported on the deposition of extremely high quality single crystal GaN layers over sapphire substrates. One of the keys to obtaining the high quality was the use of a thin AlN or GaN buffer layer between the sapphire substrate and the grown film. In this communication, we discuss the crystallinity and the influence of the buffer layer in controlling the crystalline, optical, and the electrical properties of the GaN depositions. We also compare the use of GaN and AlN as the buffer layer material. Our results indicate that the buffer layer thickness and the total film thickness are the key factors controlling the electrical, optical, and crystalline properties of the GaN depositions over sapphire substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354069
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  • 8
    Electronic Resource
    Electronic Resource
    Forces on a slowly rotating, rough cylinder in a Couette device containing a dry, frictional powder (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 335-341 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, a fine, dry powder was sheared in a Couette device: i.e., sheared between concentric vertical cylinders. The torque generated on the rough, inner cylinder was measured as this inner wall was rotated. Our experiments provided evidence that, in a column of granular material undergoing continuous shearing, normal and shear stresses increase linearly with depth. In other words, Janssen's analysis ceases to apply if granular material is continuously sheared. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869525
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  • 9
    Electronic Resource
    Electronic Resource
    Generation of poloidal magnetic field in a hot collisional plasma by inverse Faraday effect (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1495-1501 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generation of poloidal magnetic field in a hot and collisional plasma by an inverse Faraday effect is discussed. This field can either be induced by a circularly polarized laser beam (CPLB) or a plane-polarized laser beam (PPLB). For the CPLB, an average field 〈ℜx〉∼I0λ∼11.6 MG could be produced in a DT plasma for a high intensity (I0=1022 W/m2) and shorter wavelength (λ=0.35 μm) laser. This field is essentially induced by the field inhomogeneity effect and dominates over that induced by the plasma inhomogeneity effect (〈ℜx〉∼I2/30λ7/3∼2.42 MG). The collisional and thermal contribution to 〈ℜx〉 is just negligible for the CPLB. However, in the case of PPLB the poloidal field is generated only for a hot and collisional plasma and can be quite large for a longer wavelength laser (e.g., CO2 laser, λ=10.6 μm). The collisional effect induces a field 〈ℜx〉∼0.08 kG, which dominates near the turning point and is independent of the laser parameters. However, in the outer cronal region the thermal pressure effect dominates (e.g., 〈ℜx〉∼I5/30λ4/3∼3.0 MG). Further, 〈ℜx〉 for the p-polarized beam is, in general, relatively smaller than that for the s-polarized beam. Practical implications of these results and their limitations are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872010
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray diffraction and Rutherford backscattering spectrometry of Ba1NbxTi1−xO3 thin films synthesized by laser ablation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2307-2310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Niobium doped barium titanate Ba1NbxTi1−xO3 thin films have been successfully synthesized by laser ablation on sapphire (000¯1) and (100) SrTiO3 substrates, for the growth of hexagonal and cubic phases of this system. These films were synthesized with different concentrations of niobium under various conditions. X-ray diffraction measurements showed that the films were well aligned along the c-axis of the sapphire substrate for the hexagonal phase, while perpendicular to the SrTiO3 substrate surface for the cubic phase of this system. These films were deposited at substrate temperatures of 700 and 650 °C for the hexagonal and cubic phases, respectively, both in oxygen and nitrogen atmospheres. At room temperature these films have a very high resistance and large negative thermopower (similar, equals)300 mV/K. Rutherford backscattering spectrometry (RBS) was performed on very thin films of this system for different concentrations of niobium deposited in the N2 atmosphere. We have found a deficiency of Ti in these films by RBS analysis, which along with other antisite defects and oxygen deficiency, may be a cause of high resistance and large thermopower in these films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371046
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