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  • Articles  (59)
  • American Institute of Physics (AIP)  (39)
  • Springer Nature  (17)
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  • Articles  (59)
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  • 1
    Electronic Resource
    Electronic Resource
    Simulation of light propagation in two-dimensional photonic crystals with a point defect by a high-accuracy finite-difference time-domain method (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1181-1184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-accuracy finite-difference time-domain method based on what are called nonstandard finite differences was used to simulate optical propagation in a two-dimensional photonic crystal with a point defect. We used a photonic crystal consisting of a triangular lattice of air columns embedded in a high-refractive index medium. We found that the transmittance spectrum has four peaks in the photonic band-gap region, and that these peaks correspond to the resonant energies of light localized at the point defect. For a point defect consisting of an air hole with a radius smaller than that of the air holes of the photonic crystal, these peaks shift to higher energy. The peak shift of the resonant mode that is associated with the electric field concentrated about the center of the point defect is larger than the peak shift of the other modes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490157
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation [J. Appl. Phys. 76, 7833 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6073-6073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359616
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7833-7838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of BaTiO3 have been epitaxially grown on Pt(001)/MgO(100) substrates by reactive evaporation. Structural and electrical properties were investigated as a function of film thickness. In situ reflection high-energy electron diffraction and cross-sectional transmission electron microscope observations have revealed that the BaTiO3 films are epitaxially grown on Pt/MgO substrates from the initial stage without any other phase formation. From the images of an atomic force microscope, it has been found that islands of BaTiO3 are present on the bare Pt surface at the initial stage of deposition; the island structure changes to a continuous layer above 1.2 nm in thickness and BaTiO3 grows in a two-dimensional mode. The lattice parameters and the dielectric properties are dependent on the film thickness. Thermodynamic theory was introduced to explain the thickness dependence of the relative dielectric constant εr. Good agreement between the experimental results and the theoretical calculations leads to the conclusion that the thickness dependencies of the lattice parameters and the dielectric constants are caused by the two-dimensional stress due to the lattice mismatch between Pt and BaTiO3 and/or the difference in the thermal expansion coefficients of BaTiO3 and the MgO substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357891
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  • 4
    Electronic Resource
    Electronic Resource
    Desorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2327-2329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The desorption of triethylgallium (TEGa) adsorbed on As- and Ga-terminated surfaces during metalorganic molecular beam epitaxial (MOMBE) growth of GaAs is investigated by measuring the As flux dependence of the growth rate. The growth rate decreases with decreasing As flux in the substrate temperature range where the desorption of triethylgallium adsorbed on the growth surface occurs. This indicates that adsorbed TEGa (adTEGa) molecules desorb more rapidly on the Ga-terminated surface than on the As-terminated surface. To investigate the adTEGa desorptions on As- and Ga-terminated surfaces independently, the growth rates in alternating TEGa-As4 supply mode are compared with those in simultaneous supply mode. The growth rates in the alternating supply mode become smaller than those in the simultaneous supply mode as the substrate temperature is raised above 500 °C. This result demonstrates that the adTEGa desorption rate on the Ga-terminated surface is larger than that on the As-terminated surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101117
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  • 5
    Electronic Resource
    Electronic Resource
    Powder-free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1616-1618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of hydrogenated amorphous silicon films from SiH4/He gas mixtures was performed by using a square wave amplitude modulated rf discharge. The modulation was used for controlling radical densities in plasmas which led to a high rate deposition of good quality films. The fairly high deposition rate of 6 A(ring)/s was obtained for a low concentration of 5% SiH4 and a high rf peak power 200 W (0.8 W/cm3) without any appreciable amount of powder particles in the reaction chamber. The optical gap of the films was 1.8–1.95 eV. Emission intensities of HeI 388.9 nm and SiH 413.5 nm linearly increased with rf peak power and were well correlated with the deposition rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104087
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of domain boundaries on the Si (111) 7×7 surface by scanning tunneling microscope (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1313-1315 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A highly reliable scanning tunneling microscope system equipped with a field ion microscope yielded successful observation of a domain boundary on the Si(111) 7×7 reconstructed surface. For the first time, we revealed its detailed structure at the atomic level. The boundary consists of holes far larger than the corner holes of the dimer-adatom-stacking fault (DAS) model and bridge-like structures with three 2×2 subunits. The ditch structure of this boundary is running to the [1¯10] direction, i.e., to the direction of the shorter diagonal of the 7×7 unit cell. We discussed that a misfit of the 7×7 periodicity between the neighboring domains caused this ditch structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103468
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  • 7
    Electronic Resource
    Electronic Resource
    Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1661-1666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of crystal defects near the surface on the position of surface Fermi level (EFS) are investigated using photoluminescence (PL) measurements and synchrotron radiation photoelectron spectroscopy (SRPES). For the lightly Si-doped GaAs(001) surface, PL measurements reveal that after heating to 500 °C a layer with lower PL peak intensities related to gallium vacancies than those of the bulk exists just under the thermal degraded layer. SRPES shows that EFS moves upward to 1.1–1.17 eV above the valence band maximum when this thermal degraded layer is removed by chemical etching and the excess arsenic on the surface, which is formed by rinsing the etched surface with deoxygenated and deionized water, is evaporated by heating in ultrahigh vacuum (UHV). After evaporation of excess arsenic on the surface by heating, the etching-depth dependence of EFS for a sample preheated in UHV correlated with the existence of this defect concentration layer. These results suggest that the position of EFS for the GaAs(001) surface is strongly influenced by crystal defects near the surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365965
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  • 8
    Electronic Resource
    Electronic Resource
    High-power operation of heterobarrier blocking structure InGaAlP visible light laser diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1718-1719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterobarrier blocking structure InGaAlP visible light laser diodes employing a thin active layer (0.04 μm) and asymmetry coatings have been fabricated. The high light-output power operation with this heterobarrier blocking structure was investigated. The light-output power versus cw current curve was linear up to 43 mW and a maximum light output power of 51 mW was obtained. A high-power operation such as 20 mW was maintained at 40 °C. Stable oscillation in the fundamental transverse mode was obtained up to 30 mW. These results show that this heterobarrier blocking structure supplies a sufficient current confinement effect even under a high-light output power operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103125
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of low-frequency modulation on rf discharge chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency square-wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH3 density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH3 radicals is much longer than those of SiHn radicals (n=0–2).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100445
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  • 10
    Electronic Resource
    Electronic Resource
    Angular distribution of x-ray radiation from optically thick z-pinch plasmas (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4090-4095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A z-pinch plasma is an x-ray radiation source of small size concerning the z-direction radiation. However, the plasma is optically thick with respect to the resonance lines, which contain a large fraction of the total radiation. The influence of the opacity on efficiency and spatial radiation distribution has been examined. A computer simulation solving the radiation transport equation demonstrates that the efficiency of the x-ray output decreases due to absorption, but only slightly because photon trapping is mostly followed by reemission. Using this result another computer code could determine the following features concerning the angular radiation distribution: (1) The average r-direction intensity is larger than the z-direction intensity. (2) The ratio of z-direction intensity to r-direction intensity varies from shot to shot. (3) The standard deviation of z-direction intensity is larger than that of the r-direction intensity. Several plasma focus experiments were carried out, the results of which provide good qualitative proof of the above predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339122
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