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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3494-3500 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Step bunching in chemical vapor deposition of 6H– and 4H–SiC on off-oriented {0001} faces is investigated with cross-sectional transmission electron microscopy. On an off-oriented (0001)Si face, three Si–C bilayer-height steps are the most dominant on 6H–SiC and four bilayer-height steps on 4H–SiC. In contrast, single bilayer-height steps show the highest probability on a (0001¯)C face for both 6H– and 4H–SiC epilayers grown with a C/Si ratio of 2.0. The increase of C/Si ratio up to 5.0 induces the formation of multiple-height steps even on a C face. The bunched step height corresponds to the unit cell or the half unit cell of SiC. The mechanism of step bunching is discussed with consideration of surface formation processes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2385-2387 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ doping characteristics of N, Al, and B in step-controlled epitaxy of SiC have been investigated. Clear C/Si ratio dependence was observed in the growth on (0001)Si faces. Doping efficiency of N decreased and those of Al and B increased under the C-rich condition, which agrees with a model proposed as "site-competition epitaxy.'' However, doping efficiencies were almost independent of the C/Si ratio on (0001¯)C faces. Based on the results, the incorporation mechanism is discussed. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3645-3647 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Step bunching and terrace widening on 6H– and 4H–SiC epilayers on vicinal {0001} faces have been studied with atomic force microscopy (AFM) and transmission electron microscopy (TEM). Macroscopically, hill-and-valley structures are observed on off-oriented (0001)Si faces, whereas surfaces are rather flat on off-oriented (0001¯)C faces. High-resolution TEM analysis revealed that 3 bilayer-height steps are dominant on 6H–SiC and 4 bilayer-height steps on 4H–SiC. The distribution of step height and terrace width are also investigated. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1400-1402 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 4H-SiC bulk crystals were grown controllably by means of a modified Lely method. Homoepitaxial growth of 4H-SiC was carried out by vapor phase epitaxy utilizing step-controlled epitaxy on 4H-SiC substrates prepared by the modified Lely method. The physical properties (electrical and optical properties) of 4H-SiC epilayers were characterized by Hall effects and photoluminescence (PL) measurements. The electron mobilities as high as 720 cm2/V s at 292 K, and 11 000 cm2/V s at 77 K were obtained. In the PL measurement, the epilayers with a thickness more than 20 μm showed luminescence attributed to free exciton recombination, which indicates the improvement of crystal quality by step-controlled epitaxy.
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  • 5
    Electronic Resource
    Electronic Resource
    Melbourne, Australia : Blackwell Publishing Ltd.
    Plant species biology 19 (2004), S. 0 
    ISSN: 1442-1984
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Reproductive success of the tall tree species Lindera erythrocarpa Makino (Lauraceae) was examined on a per individual basis using the seed-trap method and a new method of numerical analysis of seed dispersal. Female flower and seed production per tree were successfully estimated using the model, and the dependence of each variable on tree size was expressed using allometric equations. Although seed set was highest on medium-sized trees (5% at 27 cm d.b.h.), seed production per tree was highest on the largest trees. Thus, a relative measure of reproductive success, such as seed set, was not a reliable predictor of individual variations in absolute seed production. Dry matter investment in reproduction was also expressed using an allometric equation. Reproductive investment increased as net production increased. Vegetative growth of the woody organs of individual trees reached a peak of 31.2 kg/year, at which point reproductive investment was 4.41 kg/year. The usefulness of the seed-trap method and the allometric approach to evaluate differences in reproductive variables among individuals of a large tree species was confirmed.
    Type of Medium: Electronic Resource
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