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  • American Institute of Physics (AIP)  (3)
  • Beilstein-Institut  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Manipulation of growth modes in heteroepitaxy: Ni/Cu(111) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3492-3494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxial films, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117222
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Growth-induced uniaxial anisotropy in grazing-incidence deposited magnetic films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2030-2032 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition angle dependence of the in-plane magnetic anisotropy in ultrathin Co films on Cu(001) has been investigated by using the magneto-optic Kerr effect. Grazing-incidence molecular beam epitaxy of Co has been found to result in a uniaxial magnetic anisotropy, whose strength increases with increasing deposition angle. The measured magnetic anisotropy is related to the formation of elongated adatom structures during growth. Calculations of the deposition dynamics reveal that the uniaxial magnetic anisotropy and surface morphology originate from a redistribution of incident atom flux. This redistribution is caused by long-range attractive forces between incident atoms and substrate atoms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312865
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  • 3
    Electronic Resource
    Electronic Resource
    Cross sections for He scattering from surface imperfections: Vacancies and CO adsorbates on Pt(111) (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 3722-3731 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Total cross sections for He scattering from isolated imperfections on surfaces are calculated using the Sudden approximation, and in some cases also by a numerically exact, time-dependent quantum-mechanical wave packet method. Systems studied include: CO adsorbates on Pt(111); mono-, di-, and trivacancies on Pt(111). The main results are: (1) the incidence angle and energy dependence of the cross section for He/[Pt(111)+CO] are very sensitive to the CO distance from the Pt plane. Interactions with the adsorbate image have little effect on the cross section. (2) The cross sections for clusters of vacancies are given within 10% or better, by the geometric sum of the monovacancy cross sections, the latter being treated as circles centered at each monovacancy. (3) The dependence of the cross section on the energy is sufficiently sensitive to distinguish between the "electron density hole'' and "electron density hump'' models for vacancies and vacancy clusters. (4) The Sudden approximation compares well with the exact quantum-mechanical results at typical experimental energies, when the incidence angle is not too far from the normal. These results indicate that experimental measurements of He scattering cross sections as a function of energy and incidence angle, combined with Sudden or wave packet scattering calculations, can provide detailed information on surface defects and their interactions with gas-phase atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454712
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  • 4
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    Digging gold: keV He+ ion interaction with Au (2013)
    Beilstein-Institut
    Details
    Publication Date: 2013-07-24
    Description: Helium ion microscopy (HIM) was used to investigate the interaction of a focused He+ ion beam with energies of several tens of kiloelectronvolts with metals. HIM is usually applied for the visualization of materials with extreme surface sensitivity and resolution. However, the use of high ion fluences can lead to significant sample modifications. We have characterized the changes caused by a focused He+ ion beam at normal incidence to the Au{111} surface as a function of ion fluence and energy. Under the influence of the beam a periodic surface nanopattern develops. The periodicity of the pattern shows a power-law dependence on the ion fluence. Simultaneously, helium implantation occurs. Depending on the fluence and primary energy, porous nanostructures or large blisters form on the sample surface. The growth of the helium bubbles responsible for this effect is discussed.
    Electronic ISSN: 2190-4286
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics , Technology
    Published by Beilstein-Institut
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  • 5
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    Channeling in helium ion microscopy: Mapping of crystal orientation (2012)
    Beilstein-Institut
    Details
    Publication Date: 2012-07-10
    Description: Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur. Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima. Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.
    Electronic ISSN: 2190-4286
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics , Technology
    Published by Beilstein-Institut
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  • 6
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    Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism (2012)
    Beilstein-Institut
    Details
    Publication Date: 2012-07-12
    Description: Background: Helium ion microscopy is a new high-performance alternative to classical scanning electron microscopy. It provides superior resolution and high surface sensitivity by using secondary electrons. Results: We report on a new contrast mechanism that extends the high surface sensitivity that is usually achieved in secondary electron images, to backscattered helium images. We demonstrate how thin organic and inorganic layers as well as self-assembled monolayers can be visualized on heavier element substrates by changes in the backscatter yield. Thin layers of light elements on heavy substrates should have a negligible direct influence on backscatter yields. However, using simple geometric calculations of the opaque crystal fraction, the contrast that is observed in the images can be interpreted in terms of changes in the channeling probability. Conclusion: The suppression of ion channeling into crystalline matter by adsorbed thin films provides a new contrast mechanism for HIM. This dechanneling contrast is particularly well suited for the visualization of ultrathin layers of light elements on heavier substrates. Our results also highlight the importance of proper vacuum conditions for channeling-based experimental methods.
    Electronic ISSN: 2190-4286
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics , Technology
    Published by Beilstein-Institut
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